PD - 96140 IRFH7932PbF HEXFET® Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 30V RDS(on) max Qg 3.3m @VGS = 10V 34nC : Benefits l l l l l l l l Very low RDS(ON) at 4.5V VGS Low Gate Charge Fully Characterized Avalanche Voltage and Current 100% Tested for RG Lead-Free (Qualified up to 260°C Reflow) RoHS compliant (Halogen Free) Low Thermal Resistance Large Source Lead for more reliable Soldering S S S D D G D D PQFN Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage 30 VGS ± 20 ID @ TA = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 20 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current 104 IDM PD @TA = 70°C TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range PD @TA = 25°C V 25 c Power Dissipation g Power Dissipation g Units A 200 3.4 W 2.2 g W/°C 0.03 -55 to + 150 °C Thermal Resistance Parameter f RθJC Junction-to-Case RθJA Junction-to-Ambient g Typ. Max. ––– 2.2 ––– 37 Units °C/W Notes through are on page 9 www.irf.com 1 03/03/08 IRFH7932PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS ∆ΒVDSS/∆TJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient 30 ––– ––– 0.021 ––– ––– V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 2.5 3.3 3.3 3.9 mΩ VGS(th) ∆VGS(th) Gate Threshold Voltage Gate Threshold Voltage Coefficient 1.35 ––– 1.8 -5.9 2.35 V VDS = VGS, ID = 100µA ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– ––– ––– 1.0 150 µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– ––– ––– 100 -100 nA VGS = 20V VGS = -20V gfs Qg Forward Transconductance Total Gate Charge 59 ––– ––– 34 ––– 51 S VDS = 15V, ID = 20A Qgs1 Qgs2 Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge ––– ––– 7.9 3.6 ––– ––– Qgd Qgodr Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– ––– 11 12 ––– ––– Output Charge ––– ––– 15 19 ––– ––– RG td(on) Gate Resistance Turn-On Delay Time ––– ––– 0.7 20 ––– ––– tr td(off) tf Rise Time Turn-Off Delay Time Fall Time ––– ––– ––– 48 23 20 ––– ––– ––– Ciss Coss Input Capacitance Output Capacitance ––– ––– 4270 830 ––– ––– Crss Reverse Transfer Capacitance ––– 420 ––– Qsw Qoss nC nC VGS = 10V, ID = 25A VGS = 4.5V, ID = 20A e e VDS = 15V VGS = 4.5V ID = 20A See Fig.17 & 18 VDS = 16V, VGS = 0V Ω VDD = 15V, VGS = 4.5V ns pF ID = 20A RG=1.8Ω See Fig.15 VGS = 0V VDS = 15V ƒ = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ. ––– Max. 16 Units mJ ––– 20 A Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current Min. Typ. Max. Units ––– ––– Conditions MOSFET symbol 4.2 A D showing the integral reverse G ––– 200 VSD (Body Diode) Diode Forward Voltage ––– ––– ––– 1.0 V p-n junction diode. TJ = 25°C, IS = 20A, VGS = 0V trr Qrr Reverse Recovery Time Reverse Recovery Charge ––– ––– 21 33 32 50 ns nC TJ = 25°C, IF = 20A, VDD = 15V See Fig.16 di/dt = 300A/µs ton Forward Turn-On Time 2 c S e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRFH7932PbF 1000 1000 100 BOTTOM 10 TOP 1 0.1 2.3V ≤ 60µs PULSE WIDTH Tj = 25°C ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V 1 10 BOTTOM 10 2.3V 1 ≤ 60µs PULSE WIDTH Tj = 150°C 0.1 0.01 0.1 100 0.1 100 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V 100 T J = 150°C 10 T J = 25°C 1 0.1 VDS = 15V ≤ 60µs PULSE WIDTH 0.01 1.0 2.0 3.0 4.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 5.0 ID = 25A VGS = 10V 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFH7932PbF 100000 14 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C, Capacitance (pF) C oss = C ds + C gd 10000 Ciss Coss 1000 Crss ID= 20A 12 VDS= 24V VDS= 15V 10 8 6 4 2 0 100 1 10 0 100 20 40 60 80 100 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100 T J = 150°C 10 T J = 25°C 1 100µsec 1msec 10 10msec 1 T A = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 1.6 0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFH7932PbF VGS(th) Gate threshold Voltage (V) 30 ID , Drain Current (A) 25 20 15 10 5 2.0 ID = 100µA 1.6 1.2 0.8 0 25 50 75 100 125 -75 150 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) T J , Ambient Temperature (°C) Fig 9. Maximum Drain Current Vs. Ambient Temperature Fig 10. Threshold Voltage Vs. Temperature 100 Thermal Response ( Z thJA ) D = 0.50 10 0.20 0.10 0.05 0.02 0.01 1 τJ 0.1 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 R1 R1 τJ τ1 R2 R2 R3 R3 Ri (°C/W) R4 R4 τC τ τ2 τ1 τ3 τ2 τ3 Ci= τi/Ri Ci i/Ri τ4 τ4 τi (sec) 0.54874 0.000128 2.05644 0.023270 7.36536 1.0678 6.44303 38.4 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 16 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance ( mΩ) IRFH7932PbF ID = 25A 14 12 10 8 T J = 125°C 6 4 2 T J = 25°C 0 70 ID 5.86A 6.91A BOTTOM 20.0A 60 TOP 50 40 30 20 10 0 2 3 4 5 6 7 8 9 10 25 VGS, Gate-to-Source Voltage (V) 50 75 V DS V GS + V - DD IAS 20V RD D.U.T. RG DRIVER D.U.T RG 150 Fig 13. Maximum Avalanche Energy vs. Drain Current 15V VDS 125 Starting T J , Junction Temperature (°C) Fig 12. On-Resistance vs. Gate Voltage L 100 + -V DD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 A 0.01Ω tp Fig 14a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 15a. Switching Time Test Circuit VDS 90% 10% VGS I AS Fig 14b. Unclamped Inductive Waveforms 6 td(on) tr td(off) tf Fig 15b. Switching Time Waveforms www.irf.com IRFH7932PbF D.U.T Driver Gate Drive P.W. + - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • dv/dt controlled by RG • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D= Period V DD + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Current Regulator Same Type as D.U.T. Id Vds Vgs 50KΩ 12V .2µF .3µF D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Qgs1 Qgs2 Qgd Qgodr Current Sampling Resistors Fig 17. Gate Charge Test Circuit www.irf.com Fig 18. Gate Charge Waveform 7 IRFH7932PbF PQFN Package Details PQFN Part Marking INTERNATIONAL RECTIFIER LOGO 6 DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) XXXX XYWWX XXXXX PART NUMBER MARKING CODE (Per Marking Spec.) PIN 1 IDENTIFIER LOT CODE (Eng Mode - Min. last 4 digits of EATI #) (Prod Mode - 4 digits SPN code) TOP MARKING (LASER) 8 www.irf.com IRFH7932PbF PQFN Tape and Reel NOTES: (I) Measured from the centerline of the sprocket hole to the centerline of the pocket (II) Cumulative tolerance of 10 sprocket holes is +/- 0.20 (III) Measured from the centerline of the sprocket hole to the centerline of the pocket (IV) Other material available (V) Forming format: Flatbed (VI) Estimated maximum length = 93 meters / 22B3 reel Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.078mH, RG = 25Ω, IAS = 20A. Pulse width ≤ 400µs; duty cycle ≤ 2%. Rthjc is guaranteed by design When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/2008 www.irf.com 9