DATA SHEET 1N5926B~1N5939B GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 11 to 39 Volts POWER 1.5 Watts DO-41 Unit: inch(mm) FEATURES • Low profile package .034(.86) 1.0(25.4)MIN. • Built-in strain relief • Low inductance • Plastic package has Underwriters Laboratory Flammability Classification 94V-O .028(.71) • Both normal and Pb free product are available : .205(5.2) .160(4.1) Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above MECHANICALDATA 1.0(25.4)MIN. .107(2.7) Case: JEDEC DO-41,Molded plastic over passivated junction. Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes positive end (cathode) .080(2.0) Standard packing: 52mm tape Weight: 0.012 ounce, 0.3 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. P aram eter D C P ow erD issipation on TA =75 O C ,M easure atZero Lead Length D erate above 75O C (N O TE 1) O perating Junction and S torageTem perature R ange S ym bol Value U nits PD 1.5 W atts TJ ,TSTG -55 to +150 O C NOTES: 1.Mounted on 5.0mm2 (.013mm thick) land areas. STAD-JUN.23.2004 PAGE . 1 N o m ina l Z e ne r V o lta g e M axim um Leakage C urrent M a xim um Z e ne r Im p e d a nce P artN um ber V Z @ IZT Z ZT @ IZT Z ZK @ IZK IR VR N om . V M in. V M a x. V O hm s mA O hm s mA uA V 1N 5926B 11.0 10.5 11.6 5.5 34.1 550 0.25 1.0 8.4 1N 5927B 12.0 11.4 12.6 6.5 31.2 550 0.25 1.0 9.1 1N 5928B 13.0 12.4 13.7 7.0 28.8 550 0.25 1.0 9.9 1N 5929B 15.0 14.3 15.8 9.0 25.0 600 0.25 1.0 11.4 1N 5930B 16.0 15.2 16.8 10.0 23.4 600 0.25 1.0 12.2 1N 5931B 18.0 17.1 18.9 12.0 20.8 650 0.25 1.0 13.7 1N 5932B 20.0 19.0 21.0 14.0 18.7 650 0.25 1.0 15.2 1N 5933B 22.0 20.9 23.1 17.5 17.0 650 0.25 1.0 16.7 1N 5934B 24.0 22.8 25.2 19.0 15.6 700 0.25 1.0 18.2 1N 5935B 27.0 25.7 28.4 23.0 13.9 700 0.25 1.0 20.6 1N 5936B 30.0 28.5 31.5 26.0 12.5 750 0.25 1.0 22.8 1N 5937B 33.0 31.4 34.7 33.0 11.4 800 0.25 1.0 25.1 1N 5938B 36.0 34.2 37.8 38.0 10.4 850 0.25 1.0 27.4 1N 5939B 39.0 37.1 41.0 45.0 9.6 900 0.25 1.0 29.7 STAD-JUN.23.2004 PAGE . 2 2 1.5 1 0.5 0 0 20 40 60 80 100 120 140 150 180 qvz, TEMPERATURE COEFICENT (mV/ OC) MAXIMUM POWER DISSIPATION, Watts 2.5 10 V @I Z ZT 8 6 4 2 0 -2 -4 2 200 V @I Z ZT 70 50 30 20 10 20 10 12 Fig.2 T emperature coeeficient v.s. zener voltage,Vz(V) Zz, DYNAMIC IMPEDANCE (OHMS) qvz, TEMPERATURE COEFICENT (mV/ OC) Fig.1 Steady State Power Derating 10 8 V , ZENER VOLTAGE (VOLTS) Z O LEAD TEMPERATURE, C 100 6 4 50 30 1K 500 T = 25 O C J I (rms) =0.1 I (dc) Z Z 200 100 50 20 10 5 22V 12V 2 1 0.5 Vz, ZENER VOLTAGE (VOLTS) 6.8V 1 5 2 10 20 50 100 200 500 Iz, ZENER TEST CURRENT (mA) F i g . 4 Z ener impedance v.s. zener current Fig.3 T emperature coeeficient v.s. zener voltage,Vz(V) I Z (dc)=1mA 100 70 50 30 20 10mA 10 7 5 3 2 I Z (rms)=0.1I Z (dc) 20mA 5 7 10 20 3 0 40 50 60 70 100 Vz, ZENER VOLTAGE (VOLTS) F i g . 5 Z ener impedance v.s. zener voltage STAD-JUN.23.2004 Ppk, PEAKSURGE POWER (WATTS) Zz, DYNAMIC IMPEDANCE (OHMS) 1K 200 RECTANGULAR NONREPETITIVE WAVEFORM O T J =25 C PRIOR TO INTIAL PULSE 500 300 200 100 50 30 20 10 0.1 0.20.3 0.5 1 2 3 5 10 20 30 50 100 PW, PULSE WIDTH (ms) Fig.6 Maximum Surge Power PAGE . 3 100 Iz, ZENER CURRENT (mA) Iz, ZENER CURRENT (mA) 100 50 30 20 10 5 3 2 1 0.5 0.3 0.2 0.1 0 1 2 3 4 5 6 7 8 Vz, ZENER VOLTAGE (VOLTS) Fig.7 Vz = 6.8 thru 10 Volts 9 10 50 30 20 10 5 3 2 1 0.5 0.3 0.2 0 .1 0 10 20 30 40 Vz, ZENER VOLTAGE (VOLTS) Fig.8 Vz = 12 thru 82 Volts NOTE 3. ZENER VOLTAGE (Vz) MEASUREMENT Nominal zener voltage is measured with the device function in thermal equilibrium with ambient O temperature at 25 C NOTE 4. ZENER IMPEDANCE (Zz) DERIVATION Zzt and Zzk are measured by dividing the ac voltage drop across the device by the accurrent applied. The specified limits are for Iz(ac) = 0.1 Iz, (dc) with the ac freqency = 60Hz STAD-JUN.23.2004 PAGE . 4