2SC1306 Silicon NPN Transistor Final RF Power Output Description: The 2SC1306 is a silicon NPN transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment. B C E WINTransceiver Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector-Emitter Voltage (RBE = 150 Ohm), VCER 75V Collector-Base Voltage, VCBO 80V Emitter-Base Voltage, VEBO 5V Collector Current, IC 3A Continuous Peak 5A Collector Power Dissipation (TA = +25°C), PD 1.2W Collector Power Dissipation (TC = +50°C), PD 10W Operating Junction Temperature, TJ +150°C Storage Temperature Range, Tstg -55° to +150°C Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Symbol Test Conditions V(BR)CBO IC = 100µA, IB = 0 Min Typ Max Unit 80 - - V Collector-Emitter Breakdown Voltage V(BR)CER IC = 1mA, RBE = 150 Ohm 75 - - V Emitter-Base Breakdown Voltage 5 - - V V(BR)EBO IE = 100µA, IC = 0 Collector Cutoff Current ICBO VCB = 40V IE = 0 - - 10 µA Emitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 10 µA DC Current Gain hFE VCE = 5V, IC = 0.5A 25 - 200 Collector-Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 0.1A - 0.15 0.60 V Base-Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 0.1A - 0.9 1.2 V MHz Current Gain-Bandwidth Product fT VCE = 10V, IC = 0.1A 100 150 - Output Capacitance Cob VCB = 10V, f = 1MHz 25 - - Power Output PO VCC = 12V, Pin = 0.2W, f = 27MHz 4.0 - - W 60 - - % Collector Efficiency This document was created with Win2PDF available at http://www.daneprairie.com. The unregistered version of Win2PDF is for evaluation or non-commercial use only.