UTC 2SC5569 NPN EPITAXIAL SILICON TRANSISTOR DC/DC CONVERTER APPLICATIONS FEATURES *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching. *High allowable power dissipation. *Complementary to 2SA2016. 1 APPLICATIONS *Relay drivers, lamp drivers, motor drivers, strobes SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Tc=25°C SYMBOL VALUE UNIT VCBO VCEO VEBO Ic Icp IB 80 50 6 7 10 1.2 1.3* 3.5 150 -55 ~ +150 V V V A A A Pc Junction Temperature Storage Temperature Tj Tstg W °C °C 2 * Mounted on ceramic board (250mm ×0.8mm) ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Gain Bandwidth Product Output Capacitance Turn-On Time Storage Time UTC SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob ton tstg TEST CONDITIONS Ic=10μA,IE=0 Ic=1mA,RBE=∞ IE=10μA,IE=0 VCB=40V,IE=0 VEB=4V,Ic=0 VCE=2V,Ic=500mA Ic=3.5A,IB=175mA Ic=2A,IB=40mA Ic=2A,IB=40mA VCE=10V,Ic=500mA VCB=10V, f=1MHz See specified Test Circuit See specified Test Circuit UNISONIC TECHNOLOGIES MIN TYP MAX 80 50 6 200 160 110 0.83 330 28 30 420 0.1 0.1 560 240 170 1.2 CO. LTD UNIT V V V μA μA mV mV V MHz pF ns ns 1 QW-R208-031,A UTC 2SC5569 NPN EPITAXIAL SILICON TRANSISTOR PARAMETER SYMBOL Fall Time tf TEST CONDITIONS MIN TYP See specified Test Circuit MAX UNIT 25 ns SWITCHING TIME TEST CIRCUIT PW=20μs D.C.≦1% IB1 IB2 INPUT OUTPUT RB VR RL + + 50Ω 100μF 470μF VCC = 25V V BE= -5V 20I B1= -20IB2=IC =2.5A Ic - V CE 7 90mA 10mA 2 1 3 2 1 IB=0 0.4 0.8 1.2 1.6 Collector to Emitter Voltage, V CE (V) 0 VCE = 2V Ta=75°C 3 25°C 2 -25°C 100 7 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 0.2 0.4 0.6 0.8 1.0 1.2 Base to Emitter Voltage, V BE (V) 2 3 5 7 10 1000 7 5 3 2 100 7 5 3 2 10 7 5 3 2 IC /IB=20 75°C Ta= UNISONIC TECHNOLOGIES °C 25 -25°C 1.0 0.01 2 3 5 7 0.1 Collector Current, Ic (A) UTC 1.4 VCE(sat) - Ic hFE - Ic 7 5 10 0.01 0 2.0 Collector-to-Emitter Saturation Voltage, VCE(sat) (mv) 0 1000 DC Current Gain,h FE 4 75°C 3 5 -25°C 20mA Ta= 4 6 25 °C Collector Current, Ic (A) 40mA 30mA 0 VCE = 2V 7 50mA 100 mA Collector Current, Ic (A) 6 5 Ic - V BE 8 70mA 60mA 80mA 2 3 5 7 1.0 2 3 5 7 10 Collector Current, Ic (A) CO. LTD 2 QW-R208-031,A UTC 2SC5569 NPN EPITAXIAL SILICON TRANSISTOR VCE(sat) - Ic IC/IB=50 Collector-to-Emitter Saturation Voltage, VBE(sat) (mv) Collector-to-Emitter Saturation Voltage, VCE(sat) (mV) 10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 75℃ Ta = 25°C -25°C 10 0.01 2 3 5 7 0.1 IC/IB=50 3 2 1000 7 Ta =-25℃ 5 75°C 2 Output Capacitance, Cob (pF) f=1MHz 100 7 5 3 2 10 7 5 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Gain-Bandwidth Produtc, f T (MHz) Cob - VCB 3 2 3 2 VCE=10V 3 2 100 7 5 3 2 10 5 5 70.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 op er at io n Tc=25°C Single pulse For PNP,the minus sign is omitted. 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 Collector Dissipation, PC (W) Collector Current, Ic (A) 1.0 7 5 3 2 s DC 0μ 10 1m 10 s m s IC=7A Pc - Ta 2.0 100ms s 0μ 50 10 7 5 3 2 0.1 7 5 3 2 Collector Current, Ic (A) ASO ICP=10A 1.5 Mo u 1.3 nte d 1.0 on a ce ra mi c 0.5 bo ar d (2 50 mm 2 × 0 0 20 Collector to Emitter Voltage, V CE (V) UTC 2 3 5 7 10 fT - Ic 1000 7 5 Collector to Base Voltage, V CB (V) 2 2 3 5 7 1.0 Collector Current, Ic (A) Collector Current,Ic -A 5 25°C 3 100 0.01 2 3 5 7 0.1 2 3 5 7 10 2 3 5 7 1.0 VBE(sat) - Ic 10000 7 5 UNISONIC TECHNOLOGIES 40 60 80 0.8 mm ) 100 120 140 160 Ambient Temperature, Ta(℃) CO. LTD 3 QW-R208-031,A UTC 2SC5569 NPN EPITAXIAL SILICON TRANSISTOR Pc - Tc 4.0 Collector Dissipation, Pc (W) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc(°C) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 4 QW-R208-031,A