TOSHIBA 2SK2549_06

2SK2549
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2549
DC−DC Converter, Relay Drive and Motor Drive
Applications
Unit: mm
z 2.5-V gate drive
z Low drain−source ON resistance
: RDS (ON) = 0.29 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 3.0 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 16 V)
z Enhancement mode
: Vth = 0.5~1.1 V (VDS = 10 V, ID = 200 μA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
16
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
16
V
Gate−source voltage
VGSS
±8
V
(Note 1)
ID
2
Pulse (Note 1)
IDP
6
PD
0.5
W
(Note 2)
PD
1.5
W
JEDEC
⎯
Channel temperature
Tch
150
°C
JEITA
⎯
Storage temperature range
Tstg
−55~150
°C
TOSHIBA
DC
Drain current
Drain power dissipation
Drain power dissipation
A
Note 1: Ensure that the channel temperature does not exceed 150°C.
2-5K1B
Weight: 0.05 g (typ.)
Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to
ambient
Symbol
Max
Unit
Rth (ch−a)
250
°C / W
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Marking
Part No. (or abbreviation code)
Z
Lot No.
7
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2SK2549
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±6.5 V, VDS = 0 V
—
—
±10
μA
Drain cut−off current
IDSS
VDS = 16 V, VGS = 0 V
—
—
100
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
16
—
—
V
V
Drain−source breakdown voltage
Gate threshold voltage
Vth
VDS = 10 V, ID = 200 μA
0.5
—
1.1
VGS = 2.5 V, ID = 0.5 A
—
0.29
0.38
VGS = 4 V, ID = 1 A
—
0.22
0.29
VDS = 10 V, ID = 1 A
1.5
3.0
—
—
260
—
—
34
—
Drain−source ON resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
—
103
—
tr
—
200
—
ton
—
250
—
Rise time
Turn−on time
VDS = 10 V, VGS = 0 V, f = 1 MHz
Switching time
Ω
S
pF
ns
Fall time
tf
—
300
—
toff
—
800
—
Total gate charge (Gate−source
plus gate−drain)
Qg
—
5.0
—
Gate−source charge
Qgs
—
3.2
—
Gate−drain (“miller”) charge
Qgd
—
1.8
—
Turn−off time
VDD ≈ 16 V, VGS = 5 V, ID = 2 A
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
—
—
2
A
Pulse drain reverse current
(Note 1)
IDRP
—
—
—
6
A
Forward voltage (diode)
VDSF
IDR = 2 A, VGS = 0 V
—
—
−1.7
V
Reverse recovery time
trr
—
220
—
ns
Reverse recovered charge
Qrr
IDR = 2 A, VGS = 0 V
dIDR / dt = 50 A / μs
—
0.32
—
μC
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RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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