SDR966CTN & SDR966CTP thru SDR969CTN & SDR969CTP Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, CA 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com DESIGNER’S DATA SHEET 60 AMP 600 - 900 Volts 80 nsec Ultra Fast Recovery Centertap Rectifier Features: • Soft Recovery Diode • Ultra Fast Recovery: 80 nsec Maximum • Faster Recovery Versions Available • High Surge Rating • Low Reverse Leakage Current • Low Junction Capacitance • Hermetically Sealed Package • Gold Eutectic Die Attach Available • Ultrasonic Aluminum Wire Bond • Ceramic Seals for Improved Hermeticity Available • Common Anode and Doubler Versions Available • TX, TXV, Space Level Screening Available. Consult Factory. TO-258 (N) Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage SDR966CTN & SDR966CTP SDR967CTN & SDR967CTP SDR968CTN & SDR968CTP SDR969CTN & SDR969CTP Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25ºC)1/ Peak Surge Current (Per Leg) (8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between Pulses, TA = 25ºC) Operating & Storage Temperature Maximum Thermal Resistance Junction to Case, Each Individual Diode Junction to Case 1/ TO-259 (P) Symbol Value Units VRRM Volts VR 600 700 800 900 Io 60 Amps IFSM 500* Amps Top & Tstg -65 to +200 ºC RθJE 1.3 0.7 ºC/W VRWM Notes: 1/ Both Legs Tied Together * Available with Higher Surge Rating NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0077B DOC SDR966CTN & SDR966CTP thru SDR969CTN & SDR969CTP Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, CA 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristics (Per Leg) 2x Ø.165 .155 .835 .815 Min Max VF1 VF2 VF3 VF4 –– –– –– –– 1.20 1.35 1.10 1.30 IR1 –– 100 µA IR2 –– 10 mA CJ –– 100 pF trr –– –– 80 nsec IF = 15A IF = 30A TA = 100ºC TA = -55ºC Instantaneous Forward Voltage Drop (TA = 25ºC, 300 µs Pulse) Instantaneous Forward Voltage Drop (IF = 15A, 300 µs Pulse) Reverse Leakage Current (Rated VR, TA = 25ºC, 300 µs Pulse minimum) Reverse Leakage Current (Rated VR, TA = 100ºC, 300 µs Pulse minimum) Junction Capacitance (VR = 10 Vdc, TA = 25ºC, f = 1MHz) Reverse Recovery Time (IF = 500 mA, IR = 1A, IRR = 0.25A) Case Outline: TO-258 (N) Pin 1: Anode 1 Pin 2: Cathode Symbol TA = 25ºC Case Outline: TO-259 (P) Pin 1: Anode 1 Pin 2: Cathode .750 .500 .545 .535 .550 .530 .135 TYP .120 1.300 1.030 Units Volts Volts .750 .500 2x .255 .245 Pin 3: Anode 2 Pin 3: Anode 2 PIN 3 PIN 3 2x .205 .195 .695 .685 .405 .395 1.215 .945 .700 1.175 .935 .680 PIN 2 2x .205 .195 .405 .395 PIN 2 PIN 1 .045 3x Ø.035 SUFFIX: N PIN 1 3x Ø.045 .035 .707 .697 SUFFIX: P .270 .240 .145 .135 .045 .035 .290 .280 2x .265 .245 2x Ø.150 .120 .270 .240 .145 .135 2x .200 .170 .190 MIN .045 .035 2x .200 .170 .190 MIN .190 MIN SUFFIX: NDB SUFFIX: NUB 2x .200 .170 SUFFIX: PDB TYPICAL OPERATING CURVES TA = 25oC Unless Otherwise Specified .190 MIN SUFFIX: PUB 2x .200 .170