APTGF90H60TG Full - Bridge NPT IGBT Power Module G3 G1 OUT1 E1 E3 OUT2 Q2 Q4 G2 G4 E2 E4 NTC1 NTC2 0/VBU S G3 G4 E3 E4 VBUS 0/VBUS OUT2 OUT1 E1 E2 NTC2 G1 G2 NTC1 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area Tc = 25°C Max ratings 600 110 90 315 ±20 416 Tj = 150°C 200A @ 600V Tc = 25°C Tc = 80°C Tc = 25°C Unit V A July, 2006 Q3 Q1 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGF90H60TG– Rev 3 VBUS VCES = 600V IC = 90A @ Tc = 80°C APTGF90H60TG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Min Test Conditions VGE = 0V VCE = 25V f = 1MHz Min 2.0 2.2 3 VGE = 15V VBus = 300V IC = 90A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 90A RG = 5 Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 90A RG = 5 Ω VGE = 15V Tj = 125°C VBus = 400V IC = 90A Tj = 125°C RG = 5 Ω Test Conditions VR=600V IF = 60A IF = 120A IF = 60A IF = 60A VR = 400V di/dt =400A/µs Typ 4300 470 400 330 290 200 26 25 150 Unit 5 ±150 V nA Max Unit µA V pF nC ns 26 25 ns 170 40 4.3 mJ 3.5 Typ Max 350 600 Tj = 125°C 60 1.6 1.9 1.4 Tj = 25°C 85 Tj = 125°C 160 Tj = 25°C 260 Tj = 125°C 1400 www.microsemi.com Max 250 500 2.5 30 Min 600 Tj = 25°C Tj = 125°C Tc = 70°C Typ Unit V µA A 1.8 V July, 2006 ICES Test Conditions VGE = 0V Tj = 25°C VCE = 600V Tj = 125°C T VGE =15V j = 25°C IC = 90A Tj = 125°C VGE = VCE, IC = 1mA VGE = 20 V, VCE = 0V ns nC 2-6 APTGF90H60TG– Rev 3 Symbol Characteristic APTGF90H60TG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ To Heatsink M5 2500 -40 -40 -40 2.5 RT = Min R 25 Unit °C/W V 150 125 100 4.7 160 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Max 0.3 0.65 Typ 50 3952 Max °C N.m g Unit kΩ K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGF90H60TG– Rev 3 July, 2006 SP4 Package outline (dimensions in mm) APTGF90H60TG Typical Performance Curve Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 300 250µs Pulse Test < 0.5% Duty cycle 300 TJ=-55°C 250 Ic, Collector Current (A) T J=25°C 200 150 TJ=125°C 100 50 250µs Pulse Test < 0.5% Duty cycle 250 200 T J=25°C 150 100 TJ=125°C 50 0 0 0 1 2 3 VCE, Collector to Emitter Voltage (V) 0 4 1 2 Gate Charge 250µs Pulse Test < 0.5% Duty cycle TJ=-55°C VGE, Gate to Emitter Voltage (V) 200 150 100 TJ=25°C 50 TJ=125°C TJ=-55°C 0 1 2 3 4 5 6 7 8 9 VGE, Gate to Emitter Voltage (V) On state Voltage vs Gate to Emitter Volt. TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle 6 Ic=180A 5 4 3 Ic=90A 2 Ic=45A 1 0 6 8 10 12 14 VGE, Gate to Emitter Voltage (V) VCE=300V 12 10 VCE =480V 8 6 4 2 0 0 8 7 14 10 VCE, Collector to Emitter Voltage (V) 0 50 100 150 200 250 Gate Charge (nC) 300 350 On state Voltage vs Junction Temperature 4 3.5 Ic=180A 3 2.5 Ic=90A 2 1.5 Ic=45A 1 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 0.5 0 -50 16 VCE=120V IC = 90A TJ = 25°C 16 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) Breakdown Voltage vs Junction Temp. DC Collector Current vs Case Temperature 140 Ic, DC Collector Current (A) 1.20 1.10 1.00 0.90 0.80 0.70 -50 -25 0 25 50 75 100 125 120 100 80 July, 2006 Ic, Collector Current (A) 4 18 250 VCE, Collector to Emitter Voltage (V) 3 VCE, Collector to Emitter Voltage (V) Transfer Characteristics 300 Collector to Emitter Breakdown Voltage (Normalized) T J=-55°C 60 40 20 0 -50 TJ, Junction Temperature (°C) -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 4-6 APTGF90H60TG– Rev 3 Ic, Collector Current (A) 350 APTGF90H60TG Turn-Off Delay Time vs Collector Current V GE = 15V 30 25 Tj = 25°C VCE = 400V RG = 5Ω 20 15 25 50 75 100 125 150 td(off), Turn-Off Delay Time (ns) 250 VGE=15V, TJ=125°C 200 150 100 50 25 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current VGE=15V, T J=125°C 20 125 150 60 TJ = 125°C 40 20 T J = 25°C 0 50 75 100 125 ICE, Collector to Emitter Current (A) 150 25 Turn-On Energy Loss vs Collector Current Eoff, Turn-off Energy Loss (mJ) 8 VCE = 400V RG = 5Ω 6 TJ=125°C, VGE=15V 4 T J=25°C, VGE=15V 2 0 0 25 50 75 100 125 6 VCE = 400V VGE = 15V RG = 5Ω 5 4 TJ = 25°C 2 1 0 150 0 25 Eoff, 90A Eoff, 45A 4 Eon, 45A 0 10 20 30 Gate Resistance (Ohms) 40 75 100 125 150 Switching Energy Losses vs Junction Temp. Switching Energy Losses (mJ) Eoff, 180A Eon, 90A 0 50 ICE, Collector to Emitter Current (A) Eon, 180A 8 TJ = 125°C 3 Switching Energy Losses vs Gate Resistance 12 150 Turn-Off Energy Loss vs Collector Current ICE, Collector to Emitter Current (A) VCE = 400V VGE = 15V TJ= 125°C 50 75 100 125 ICE, Collector to Emitter Current (A) 50 10 V CE = 400V V GE = 15V R G = 5Ω 8 Eon, 180A Eoff, 180A 6 Eon, 90A 4 July, 2006 25 Eon, Turn-On Energy Loss (mJ) 100 VCE = 400V, VGE = 15V, RG = 5Ω tf, Fall Time (ns) tr, Rise Time (ns) VCE = 400V RG = 5Ω 0 Switching Energy Losses (mJ) 75 Current Fall Time vs Collector Current 80 40 16 50 ICE, Collector to Emitter Current (A) 80 60 VGE=15V, TJ=25°C VCE = 400V R G = 5Ω Eoff, 90A 2 Eoff, 45A Eon, 45A 0 0 www.microsemi.com 25 50 75 100 TJ, Junction Temperature (°C) 125 5-6 APTGF90H60TG– Rev 3 td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 35 APTGF90H60TG Capacitance vs Collector to Emitter Voltage Reverse Bias Safe Operating Area 10000 250 IC, Collector Current (A) C, Capacitance (pF) Cies 1000 Coes Cres 100 200 150 100 50 0 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) 50 0 200 400 600 800 VCE, Collector to Emitter Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 0.25 0.9 0.7 0.2 0.3 0.1 0.05 0 0.00001 0.05 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 200 1 10 Operating Frequency vs Collector Current ZVS 160 120 ZCS V CE = 400V D = 50% R G = 5Ω TJ = 125°C TC = 75°C 80 40 Hard switching 0 20 40 60 80 100 IC , Collector Current (A) 120 July, 2006 0.1 0.5 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTGF90H60TG– Rev 3 0.15 Fmax, Operating Frequency (kHz) Thermal Impedance (°C/W) 0.35