ADPOW APTM50AM24SC

APTM50AM24SC
Phase leg
Series & SiC parallel diodes
MOSFET Power Module
VDSS = 500V
RDSon = 24mΩ max @ Tj = 25°C
ID = 150A @ Tc = 25°C
Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
VBUS
0/VBUS
OUT
S1
Parallel SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
•
•
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
•
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
G2
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
500
150
110
600
±30
24
1250
24
30
1300
Unit
V
A
V
mΩ
W
A
June, 2004
S2
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–7
APTM50AM24SC – Rev 1
G1
•
APTM50AM24SC
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BVDSS Drain - Source Breakdown Voltage
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Min
500
VGS = 0V,VDS = 500V
T j = 25°C
VGS = 0V,VDS = 400V
Tj = 125°C
VGS = 10V, ID = 75A
VGS = VDS, ID = 6mA
VGS = ±30 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
3
Min
VGS = 10V
VBus = 250V
ID = 150A
500
3
24
5
±500
Unit
V
µA
mA
mΩ
V
nA
Max
Unit
nF
nC
216
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 150A
R G = 0.8Ω
Characteristic
Typ
19.6
4.2
0.3
434
Max
120
SiC Parallel diode ratings and characteristics
Symbol
VRRM
Typ
Test Conditions
10
17
50
41
Min
600
Maximum Peak Repetitive Reverse Voltage
Tj = 25°C
Tj = 125°C
Tc = 125°C
Tj = 25°C
Tj = 175°C
ns
Typ
Max
400
800
80
1.6
2.0
1600
8000
Maximum Reverse Leakage Current
VR=600V
IF(A V)
Maximum Average Forward Current
50% duty cycle
VF
Diode Forward Voltage
IF = 80A
QC
Total Capacitive Charge
IF = 80A, VR = 300V
di/dt =2000A/µs
112
Q
Total Capacitance
f = 1MHz, VR = 200V
520
f = 1MHz, VR = 400V
400
µA
A
1.8
2.4
V
nC
pF
June, 2004
IRRM
Unit
V
APT website – http://www.advancedpower.com
2–7
APTM50AM24SC – Rev 1
IDSS
Test Conditions
VGS = 0V, ID = 1.5mA
APTM50AM24SC
Series diode ratings and characteristics
Symbol Characteristic
IF(A V)
Maximum Average Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
50% duty cycle
IF = 120A
IF = 240A
IF = 120A
IF = 120A
VR = 133V
di/dt = 400A/µs
IF = 120A
VR = 133V
di/dt = 400A/µs
Min
Tj = 125°C
Typ
120
1.1
1.4
0.9
Tj = 25°C
31
Tj = 125°C
60
Tj = 25°C
120
Tj = 125°C
500
Tc = 85°C
Thermal and package characteristics
Symbol Characteristic
Min
Transistor
Series diode
Parallel diode
RthJC
Junction to Case
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
To heatsink
For terminals
M6
M5
2500
-40
-40
-40
3
2
Typ
Max
Unit
A
1.15
V
ns
nC
Max
0.10
0.46
0.35
Unit
°C/W
V
150
125
100
5
3.5
280
°C
N.m
g
APT website – http://www.advancedpower.com
3–7
APTM50AM24SC – Rev 1
June, 2004
Package outline
APTM50AM24SC
Typical MOSFET Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.1
0.9
0.08
0.7
0.06
0.5
0.04
0.3
0.1
0.02
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
8V
VGS=10&15V
480
7V
360
6.5V
240
6V
120
VDS > ID(on)xR DS(on)MAX
250µs pulse test @ < 0.5 duty cycle
420
7.5V
I D, Drain Current (A)
5.5V
360
300
240
180
TJ =25°C
120
60
TJ =125°C
TJ=-55°C
0
0
0
5
10
15
20
VDS, Drain to Source Voltage (V)
25
0
RDS(on) vs Drain Current
Normalized to
VGS=10V @ 75A
1.15
VGS=10V
1.10
VGS=20V
1.05
2
3
4
5
6
7
8
DC Drain Current vs Case Temperature
160
I D, DC Drain Current (A)
1.20
1
VGS, Gate to Source Voltage (V)
1.00
0.95
0.90
120
80
40
0
0
60
120
180
240
ID, Drain Current (A)
300
360
25
50
75
100
125
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
150
June, 2004
I D, Drain Current (A)
10
480
600
RDS(on) Drain to Source ON Resistance
1
4–7
APTM50AM24SC – Rev 1
Thermal Impedance (°C/W)
0.12
1.1
1.0
0.9
0.8
-50 -25
0
25 50
75 100 125 150
ON resistance vs Temperature
2.5
VGS=10V
ID=75A
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
Maximum Safe Operating Area
1000
1.1
ID, Drain Current (A)
VGS (TH), Threshold Voltage
(Normalized)
1.2
1.0
0.9
0.8
0.7
0.6
100
limited by RDSon
1ms
10
10ms
Single pulse
TJ =150°C
1
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
1
Capacitance vs Drain to Source Voltage
VGS , Gate to Source Voltage (V)
100000
Ciss
10000
Coss
1000
Crss
100
10
0
10
20
30
40
VDS, Drain to Source Voltage (V)
50
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
V DS=100V
I D=150A
12 T =25°C
J
V =250V
DS
10
VDS=400V
8
6
4
2
0
0
100
200 300 400
Gate Charge (nC)
500
600
June, 2004
C, Capacitance (pF)
100µs
limited by R DSon
APT website – http://www.advancedpower.com
5–7
APTM50AM24SC – Rev 1
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.2
RDS(on), Drain to Source ON resistance
(Normalized)
APTM50AM24SC
APTM50AM24SC
Delay Times vs Current
Rise and Fall times vs Current
60
80
VDS=333V
RG=0.8Ω
TJ=125°C
L=100µH
60
td(off)
40
t r and tf (ns)
V DS =333V
RG =0.8Ω
T J=125°C
L=100µH
30
20
td(on)
tf
40
20
tr
10
0
0
30
80
130
180
230
ID, Drain Current (A)
280
30
3
Eon
1
280
VDS=333V
ID=150A
TJ=125°C
L=100µH
6
Eoff
4
Eon
2
0
0
30
80
130
180
230
0
280
ID, Drain Current (A)
Operating Frequency vs Drain Current
IDR, Reverse Drain Current (A)
VDS=333V
D=50%
RG=0.8Ω
T J=125°C
500
400
300
200
100
0
60
90
120
ID, Drain Current (A)
2
3
4
5
6
7
8
9
150
1000
Source to Drain Diode Forward Voltage
TJ =150°C
100
TJ=25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
June, 2004
30
1
Gate Resistance (Ohms)
600
Frequency (kHz)
230
Switching Energy vs Gate Resistance
Eoff
2
180
8
Switching Energy (mJ)
Switching Energy (mJ)
VDS=333V
RG=0.8Ω
T J=125°C
L=100µH
4
130
I D, Drain Current (A)
Switching Energy vs Current
5
80
APT website – http://www.advancedpower.com
6–7
APTM50AM24SC – Rev 1
t d(on) and td(off) (ns)
50
APTM50AM24SC
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.4
0.35
0.9
0.3
0.7
0.25
0.5
0.2
0.15
0.3
0.1
0.1
0.05
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
1600
TJ=25°C
120
TJ =75°C
IR Reverse Current (µA)
I F Forward Current (A)
Reverse Characteristics
Forward Characteristics
160
TJ=175°C
80
TJ =125°C
40
0
0
0.5
1
1.5
2
2.5
3
3.5
VF Forward Voltage (V)
1400
TJ =175°C
1200
TJ =125°C
1000
800
TJ =75°C
600
400
TJ=25°C
200
0
200
300 400 500 600 700
VR Reverse Voltage (V)
800
Capacitance vs.Reverse Voltage
C, Capacitance (pF)
3000
2500
2000
1500
1000
500
0
1000
June, 2004
10
100
VR Reverse Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
7–7
APTM50AM24SC – Rev 1
1