NTE350F Silicon NPN Transistor RF Power AMP Description: The NTE350F is designed for 12.5 Volt large−signal amplifier applications required in commercial and industrial equipment operating to 300MHz. Features: D Specified 12.5 Volt, 175MHz Characteristics: Output Power = 15 Watts Minimum Gain = 6.3dB Efficiency = 60% D Characterized with Series Equivalent Large−Signal Impedance Parameters Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A Total Device Dissipation, PD TC = +25°C (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31W Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177W/°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C Note 1. Device is designed for RF operation. The total dissipation rating applies only when the devices are operated as RF amplifiers. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector−Emitter Breakdown Voltage Emitter−Base Breakdown Voltage Collector Cutoff Current V(BR)CEO IC = 20mA, IB = 0 18 − − V V(BR)CES IC = 10mA, VBE = 0 36 − − V V(BR)EBO IE = 2.0mA, IC = 0 4.0 − − V ICES VCE = 15V, VBE = 0, TC = +55°C − − 8.0 mA ICBO VCB = 15V, IE = 0 − − 0.5 mA hFE IC = 0.5A, VCE = 5.0V 5.0 − − Cob VCB = 15V, IE = 0, f = 0.1MHz − 70 85 pF GPE POUT = 15W, VCC = 12.5V, f = 175MHz 6.3 − − dB η POUT = 15W, VCC = 12.5V, f = 175MHz 60 − − % ON Characteristics DC Current Gain Dynamic Characteristics Output Capacitance Functional Test Common−Emitter Amplifier Gain Collector Efficiency .122 (3.1) Dia (2 Holes) .725 (18.42) E C B E .250 (6.35) .225 (5.72) .860 (21.84) .378 (9.56) .005 (0.15) .255 (6.5) .185 (4.7) .975 (24.77) .085 (2.14)