MMBTA42 High-Voltage NPN Transistor Surface Mount COLLECTOR 3 SOT-23 3 1 BASE 1 2 2 EMITTER Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value 300 300 5.0 500 Unit Vdc Vdc Vdc mAdc Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (1) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Symbol PD R JA Total Device Dissipation Alumina Substrate, (2) TA=25 C Derate above 25 C Max Unit 225 mW 1.8 mW/ C C/W 556 300 PD Thermal Resistance, Junction to Ambient Junction and Storage, Temperature mW 2.4 R JA 417 mW/ C C/W TJ,Tstg -55 to +150 C Device Marking MMBTA42=1D Electrical Characteristics (TA=25 C Unless Otherwise noted) Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage(3) (IC=1.0mAdc.IB=0) V(BR)CEO 300 - Vdc Collector-Base Breakdown Voltage (IC=100 Adc, IE=0) V(BR)CBO 300 - Vdc Emitter-Base Breakdown Voltage (IE=10 Adc, IC=0) V(BR)EBO 5.0 - Vdc Base Cutoff Current (VCB=200 Vdc, IE=0) ICBO - 0.25 Adc Emitter Cutoff Current VEB=3V, IC=0 IEBO - 0.1 Adc Off Characteristics 1.FR-5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina. 3.Pulse Test:Pulse Width 300 µS, Duty Cycle 2.0%. WEITRON http://www.weitron,com.tw MMBTA42 Electrical Characteristics (TA=25 Characteristics WE IT R ON C unless otherwise noted) (Countinued) Symbol Min Max Unit 25 100 25 200 - - On Characteristics DC Current Gain (IC= 1.0 mAdc, VCE=10Vdc) (IC= 10 mAdc, VCE= 10Vdc) (IC= 30 mAdc, VCE= 10Vdc) HFE(1) HFE(2) HFE(3) Collector-Emitter Saturation Voltage(3) (IC= 20 mAdc, IB= 2.0 mAdc) VCE(sat) - 0.5 Vdc Base-Emitter Saturation Voltage (3) (IC= 20 mAdc, IB= 2.0 mAdc) VBE(sat) - 0.9 Vdc fT -50 - MHz Current-Gain-Bandwidth Product (IC= 10 mAdc, VCE= 5 Vdc, f=130MHz) WEITRON http://www.weitron.com.tw MMBTA42 WE IT R ON Typical Characteristics hFE, DC CURRENT GAIN 120 Tj=+125 C 100 80 25 C 60 40 -55 C 20 0 0.1 1.0 IC, COLLECTOR CURRENT (mA) 10 100 Figure ,1 DC Current Gain 1.4 VCE(sat)@25 C, ICIB = 10 VCE(sat)@125 C, ICIB =10 V, VOLTAGE (VOLTS) 1.2 1.0 VCE(sat)@ -55 C, ICIB=10 VBE(sat)@25 C, ICIB = 10 VBE(sat)@125 C, ICIB =10 0.8 0.6 VBE(sat)@ -55 C, ICIB =10 VBE(on)@25 C, VCE = 10V 0.4 VBE(on)@125 C, VCE = 10V 0.2 00 VBE(on)@-55 C, VCE = 10V 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 fT, CURRENT-GAIN-BANDWIDTH (MHz) Figure,2 "On"Voltages 80 70 60 50 40 30 Tj=25 C VEC=20V f=20MHz 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 Ic, COLLECTOR CURRENT (mA) Figure ,3 Current-Gain-Bandwidth WEITRON http://www.weitron.com.tw 70 100 MMBTA42 SOT-23 Package Outline Dimension SOT-23 A B TOP VIEW C D E G H K J WEITRON http://www.weitron.com.tw L M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25