DATA SHEET MMBT2222A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch (mm) FEATURES .119(3.00) .110(2.80) .103(2.60) .047(1.20) • Collector current IC = 600mA • Pb free product are available : 99% Sn above can meet Rohs .056(1.40) • Collector-emitter voltage VCE = 40V environment substance directive request .083(2.10) .066(1.70) MECHANICAL DATA .086(2.20) .007(.20)MIN • NPN epitaxial silicon, planar design .006(.15) .002(.05) .006(.15)MAX .020(.50) .013(.35) 3 COLLECTOR Top View Approx. Weight: 0.008 gram .035(0.90) Terminals: Solderable per MIL-STD-202G, Method 208 .044(1.10) Case: SOT-23, Plastic 3 Collector Marking: M2A 1 BASE 1 Base 2 Emitter 2 EMITTER ABSOLUTE RATINGS PA R A M E TE R S ym bol Value U nits C ollector-E m itterVoltage V C EO 40 V C ollector-B ase Voltage V C BO 75 V E m itter-B ase Voltage V EBO 6.0 V IC 600 mA S ym bol Value U nits M ax P ow erD issipation (N ote 1) P TO T 225 mW Therm alR esistance ,Junction to A m bient RθJA 556 Junction Tem perature TJ -55 to 150 O C S torage Tem perature TISTG -55 to 150 O C C ollectorC urrent-C ontinuous THERMAL CHARACTERISTICS PA R A M E TE R O C /W Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. STAD-MAY.11.2004 PAGE . 1 ELECTRICAL CHARACTERISTICS PA RA M E TE R S ym b o l Te s t C o n d i t i o n M IN . T YP. MA X . U ni t s C o lle c to r - E mi tte r B re a k d o wn Vo lta g e V (B R) C E O IC = 1 . 0 m A , IB = 0 40 - - V C o lle c to r - B a s e B re a k d o wn Vo lta g e V (B R) C B O IC = 1 0 u A , IE = 0 75 - - V E mi tte r - B a s e B re a k d o wn Vo lta g e V (B R) E B O IE = 1 0 u A , IC = 0 6 .0 - - V B a s e C ut o f f C ur r e nt IB L V C E =6 0 V, V E B =3 .0 V - - 20 nA IC E X V C E =6 0 V, V E B =3 .0 V - - 10 nA IC B O V C E = 6 0 V , IE = 0 , V C E = 6 0 V , IE = 0 , T J = 1 2 5 O C - - 10 10 nA uA IE B O V E B = 3 . 0 V , IC = 0 , - - 100 nA hF E IC = 0 . 1 m A , V C E = 1 0 V IC = 1 . 0 m A , V C E = 1 0 V IC = 1 0 m A , V C E = 1 0 V IC = 1 0 m A , V C E = 1 0 V , T J = 1 2 5 O C IC = 1 5 0 m A , V C E = 1 0 V ( N o t e 2 ) IC = 1 5 0 m A , V C E = 1 V ( N o t e 2 ) IC = 5 0 0 m A , V C E = 1 0 V ( N o t e 2 ) 35 50 75 35 100 50 40 - 300 - - C o l l e c t o r C ut o f f C ur r e nt E m i t t e r C ut o f f C ur r e nt D C C ur r e nt G a i n C o l l e c t o r - E m i t t e r S a t ur a t i o n Vo l t a g e (No te 2 ) V C E (S AT) IC = 1 5 0 m A , IB = 1 5 m A IC = 5 0 0 m A , IB = 5 0 m A - - 0 .3 1 .0 V B a s e - E m i t t e r S a t ur a t i o n Vo l t a g e (No te 2 ) V B E (S AT) IC = 1 5 0 m A , IB = 1 5 m A IC = 5 0 0 m A , IB = 5 0 m A 0 .6 - - 1 .2 2 .0 V C o l l e c t o r - B a s e C a p a c i t a nc e C CBO V C B = 1 0 V , IE = 0 , f = 1 M H z - - 8 .0 pF E m i t t e r - B a s e C a p a c i t a nc e C EBO V C B = 0 . 5 V , IC = 0 , f = 1 M H z - - 25 pF D e l a y Ti m e td V C C =3 V,V B E =-5 V, IC = 1 5 0 m A , IB = 1 5 m A - - 10 ns R i s e Ti m e tr V C C =3 V,V B E =-5 V, IC = 1 5 0 m A , IB = 1 5 m A - - 25 ns S t o r a g e Ti m e ts V C C = 3 0 V , IC = 1 5 0 m A IB 1 = IB 2 = 1 5 m A - - 225 ns F a l l Ti m e tf V C C = 3 0 V , IC = 1 5 0 m A IB 1 = IB 2 = 1 5 m A - - 60 ns Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS +30V +30V 1.0 to 100us Duty Cycle ~ 2.0% +16V 200Ω 200Ω 1.0 to 100us Duty Cycle ~ 2.0% +16V 0 0 -2V < 2ns 1KΩ CS* < 10pF Scope rise time < 4ns CS* < 10pF 1KΩ -14V < 20ns 1N914 -4V * Total shunt capacitance of test jig, connectors, and oscilloscope Fig. 1. STAD-MAY.11.2004 Turn-On Time Fig. 2. Turn-Off Time PAGE . 2 ELECTRICAL CHARACTERISTICS CURVE 350 0.8 TJ = 150˚ C 300 0.6 250 TJ = 100˚ C V BE (on) TJ = 25˚ C 150 TJ = 100˚ C 0.5 200 hFE TJ = 25˚ C 0.7 0.4 TJ = 150˚ C 0.3 100 0.2 VCE = 10V 50 VCE = 10V 0.1 0 0.0 0.1 1 10 100 1000 0.1 1 Collector Current, IC (mA) 100 1000 Collector Current, IC (mA) Fig. 3. Typical hFE vs Collector Current Fig. 4. Typical VBE vs Collector Current 500 1.2 450 TJ = 150 ˚C IC/IB = 10 1.0 400 350 0.8 IC/IB = 10 300 V BE (sat) (V) VCE (sat) (mV) 10 250 200 TJ = 25 ˚C 0.6 TJ = 150 ˚C 0.4 150 100 0.2 50 TJ = 100 ˚C TJ = 25 ˚C 0 0.0 0.1 1 10 100 1000 0.1 Collector Current, IC (mA) 1 10 100 1000 Collector Current, IC (mA) Fig. 5. Typical VCE (sat) vs Collector Current Fig. 6. Typical VBE (sat) vs Collector Current 100 Capacitance (pF) f=1 MHz CIB (EB) 10 COB (CB) 1 0.1 1 10 100 Reverse Voltage, VR (V) Fig. 7. Typical Capacitances vs Reverse Voltage STAD-MAY.11.2004 PAGE . 3 MOUNTING PAD LAYOUT Unit: inch (mm) 0.078(2.0) 0.035(0.9) SOT-23 0.031(0.8) 0.037(0.95) ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3.0K per 7" plastic Reel LEGAL STATEMENT IMPORTANT NOTICE This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation of the device in the application. The information will help the customer's technical experts determine that the device is compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed to be reliable and accurate. The specifications and information herein are subject to change without notice. New products and improvements in products and product characterization are constantly in process. Therefore, the factory should be consulted for the most recent information and for any special characteristics not described or specified. Copyright Pan Jit International Inc. 2003 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract. The information presented is believed to be accurate and reliable, and may change without notice in advance. No liability will be accepted by the publisher for any consequence of use.Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. STAD-MAY.11.2004 PAGE . 4