MBR130LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package Using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are ac/dc and dc−dc converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical. These state−of−the−art devices have the following features: • • • • • • • http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 30 VOLTS Guardring for Stress Protection Low Forward Voltage 125°C Operating Junction Temperature Epoxy Meets UL 94, V−0 Package Designed for Optimal Automated Board Assembly This device is manufactured with a Pb−Free external lead finish only. ESD Ratings: Machine Model, C ESD Ratings: Human Body Model, 3B SOD−123FL CASE 498 PLASTIC DEVICE MARKING Mechanical Characteristics • • • • • • • • Reel Options: MBR130LSFT1 = 3,000 per 7″ reel/8 mm tape Device Marking: L3L Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Lead Finish: 100% Matte Sn (Tin) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements L3LD L3L D = Specific Device Code = Date Code ORDERING INFORMATION Device Package Shipping† MBR130LSFT1 SOD−123FL* 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *This package is inherently Pb−Free. Semiconductor Components Industries, LLC, 2005 January, 2005 − Rev. 1 1 Publication Order Number: MBR130LSFT1/D MBR130LSFT1 MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 30 V IO 1.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TL = 110°C) IFRM 2.0 A Non−Repetitive Peak Surge Current (Non−Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM 40 A Storage Temperature Tstg −55 to 150 °C Operating Junction Temperature TJ −55 to 125 °C dv/dt 10,000 V/s Rtjl Rtjl Rtja Rtja 26 21 325 82 °C/W Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TL = 117°C) Voltage Rate of Change (Rated VR, TJ = 25°C) THERMAL CHARACTERISTICS Thermal Resistance − Junction−to−Lead (Note 1) Thermal Resistance − Junction−to−Lead (Note 2) Thermal Resistance − Junction−to−Ambient (Note 1) Thermal Resistance − Junction−to−Ambient (Note 2) Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Mounted with minimum recommended pad size, PC Board FR4. 2. Mounted with 1 in. copper pad (Cu area 700 mm2). ELECTRICAL CHARACTERISTICS VF Maximum Instantaneous Forward Voltage (Note 3) (IF = 0.1 A) (IF = 0.7 A) (IF = 1.0 A) IR Maximum Instantaneous Reverse Current (Note 3) (VR = 30 V) 3. Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2%. http://onsemi.com 2 TJ = 25°C TJ = 100°C 0.29 0.36 0.38 0.18 0.27 0.30 TJ = 25°C TJ = 100°C 1.0 25 V mA MBR130LSFT1 TYPICAL CHARACTERISTICS TJ = 125°C TJ = 100°C TJ = 25°C 0.1 0.10 TJ = −55°C 0.20 0.30 0.50 0.40 0.60 0.70 1 T = 125°C J TJ = 100°C 0.1 0.10 0.80 0.30 0.20 0.50 0.40 Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage TJ = 125°C 10E−3 TJ = 25°C 10E−6 1E−6 TJ = −55°C 100E−9 TJ = 125°C 10E−3 TJ = 100°C 1E−3 TJ = 25°C 100E−6 10E−9 1E−9 1E+0 100E−3 TJ = 100°C 1E−3 0 10 20 VR, REVERSE VOLTAGE (VOLTS) 30 TJ = −55°C 10E−6 0 10 20 VR, REVERSE VOLTAGE (VOLTS) 1.8 freq = 20 kHz dc 1.6 1.4 SQUARE WAVE 1.2 1.0 Ipk/IO = 0.8 Ipk/IO = 5 0.6 Ipk/IO = 10 0.4 Ipk/IO = 20 0.2 45 65 85 105 30 Figure 4. Maximum Reverse Current 125 145 TL, LEAD TEMPERATURE (°C) PFO, AVERAGE POWER DISSIPATION (WATTS) Figure 3. Typical Reverse Current 0 25 0.70 0.60 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 100E−6 IO, AVERAGE FORWARD CURRENT (AMPS) TJ = −55°C TJ = 25°C VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 100E−3 IR, REVERSE CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 1 10 IR, MAXIMUM REVERSE CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 0.6 0.5 Ipk/IO = 0.4 dc SQUARE WAVE Ipk/IO = 5 Ipk/IO = 10 0.3 Ipk/IO = 20 0.2 0.1 0 0 Figure 5. Current Derating 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 6. Forward Power Dissipation http://onsemi.com 3 1.8 MBR130LSFT1 C, CAPACITANCE (pF) 1000 TJ, DERATED OPERATING TEMPERATURE (°C) TYPICAL CHARACTERISTICS TJ = 25 °C 100 10 0 5 10 15 20 25 VR, REVERSE VOLTAGE (VOLTS) 30 125 RJA = 25.6 °C/W 120 115 110 105 RJA = 130 °C/W 100 95 90 RJA = 235 °C/W 85 80 75 70 65 RJA = 324.9 °C/W RJA = 400 °C/W 0 r(t), TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance 2 4 6 8 10 12 14 16 VR, DC REVERSE VOLTAGE (VOLTS) 18 20 Figure 8. Typical Operating Temperature Derating 1000 D = 0.5 100 0.2 0.1 0.05 P(pk) 10 0.01 t1 t2 DUTY CYCLE, D = t1/t2 1 SINGLE PULSE JA = 321.8 °C/W Test Type > Min Pad < Die Size 38x38 @ 75% mils 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 t1, TIME (sec) Figure 9. Thermal Response http://onsemi.com 4 1 10 100 1000 MBR130LSFT1 PACKAGE DIMENSIONS SOD−123LF CASE 498−01 ISSUE O B L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH. 4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP. E D A H POLARITY INDICATOR OPTIONAL AS NEEDED C DIM A B C D E H J K L K L J SOLDERING FOOTPRINT* ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ 0.91 0.036 2.36 0.093 4.19 0.165 ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ 1.22 0.048 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MILLIMETERS MIN MAX 1.50 1.80 2.50 2.90 0.90 1.00 0.70 1.10 0.55 0.95 0.00 0.10 0.10 0.20 3.40 3.80 0° 8° INCHES MIN MAX 0.059 0.071 0.098 0.114 0.035 0.039 0.028 0.043 0.022 0.037 0.000 0.004 0.004 0.008 0.134 0.150 0° 8° MBR130LSFT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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