IRF IRF7210PBF

PD - 97040
IRF7210PbF
HEXFET® Power MOSFET
l
l
l
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Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
VDSS = -12V
RDS(on) = 0.007Ω
Top View
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques.
SO-8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
VGSM
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µs
Junction and Storage Temperature Range
Max.
Units
-12
±16
±12
±100
2.5
1.6
0.02
± 12
16
-55 to + 150
V
W/°C
V
V
°C
Max.
Units
50
°C/W
A
W
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambientƒ
1
08/19/05
IRF7210PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS
V(BR)DSS
Qg
Q gs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
-14
-12
–––
–––
–––
-0.6
16
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.011
.005
.007
–––
–––
–––
–––
–––
–––
–––
212
27
52
50
3.0
6.5
30
17179
9455
8986
Max. Units
Conditions
–––
V
VGS = 0V, ID = -5.0mA
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
.007
VGS = -4.5V, ID = -16A ‚
Ω
.010
VGS = -2.5V, ID = -12A ‚
–––
V
VDS = VGS, ID = -500µA
–––
S
VDS = -10V, ID = -16A
-10
VDS = -12V, VGS = 0V
-1.0
VDS = -9.6V, VGS = 0V
µA
-100
VDS = -12V, VGS = 0V, TJ = 70°C
-100
nA VGS = -12V
100
VGS = 12V
–––
ID = -10A
–––
nC VDS = -10V
–––
VGS = -5.0V‚
–––
ns
VDD = -10V
–––
ID = -10A
µs
–––
RD = 1.0Ω
–––
RG = 6.2Ω ‚
–––
VGS = 0V
–––
pF
VDS = -10V
–––
ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
-2.5
–––
–––
-100
–––
–––
–––
–––
165
296
-1.2
247
444
A
V
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
S
TJ = 25°C, IS = -2.5A, VGS = 0V ‚
TJ = 25°C, IF = -2.5A
di/dt = 85A/µs ‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
ƒ When mounted on 1 inch square copper board, t<10 sec
‚ Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRF7210PbF
20
VGS
-1.8V
-1.6V
-1.4V
-1.2V
-1.0V
BOTTOM -0.8V
12
8
4
-0.8V
0
0
2
4
6
8
12
4
-0.8V
A
0
TJ = 25°C
100
80
TJ = 150°C
40
20
V DS = -10V
300µs PULSE WIDTH
6.0
A
8.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-ID , Drain-to-Source Current (A)
120
4.0
4
6
8
ID = -16A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20
40
60
80 100 120 140 160
-V GS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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10
Fig 2. Typical Output Characteristics
2.0
2.0
2
-V DS, Drain-to-Source Voltage (V)
140
0.0
A
0
10
Fig 1. Typical Output Characteristics
0
300µs PULSE WIDTH
TJ = 150°C
8
-VDS , Drain-to-Source Voltage (V)
60
VGS
-1.8V
-1.6V
-1.4V
-1.2V
-1.0V
BOTTOM -0.8V
TOP
-I , Drain-to-Source Current (A)
D
-I , Drain-to-Source Current (A)
D
16
16
300µs PULSE WIDTH
TJ = 25°C
TOP
3
IRF7210PbF
10
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + C gd
-VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
24000
20000
Ciss
16000
12000
Coss
Crss
8000
0
2
4
6
8
10
12
I D = -10A
VDS = -12V
8
6
4
2
0
A
0
50
-V DS , Drain-to-Source Voltage (V)
200
250
300
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
TJ = 25°C
100
10
VGS = 0V
1
2.0
4.0
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
TJ = 150°C
0.0
RDS(on) , Drain-to-Source On Resistance ( Ω )
-IID , Drain Current (A)
1000
1000
-I SD , Reverse Drain Current (A)
150
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
6.0
8.0
-V SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
A
10.0
100us
1ms
10
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area.
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A
IRF7210PbF
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.001
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (sec)
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7210PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
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SO-8 Part Marking Information
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IRF7210PbF
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 08/05
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7