IRF IRF7822PBF

PD - 95024
IRF7822PbF
HEXFET® Power MOSFET for DC-DC Converters
•
•
•
•
•
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Lead-Free
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7822 has been optimized for all parameters that
are critical in synchronous buck converters including
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7822 offers particulary low RDS(on) and high Cdv/
dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
SO-8
T o p V ie w
DEVICE CHARACTERISTICS…
IRF7822
RDS(on)
5.0mΩ
QG
44nC
Qsw
12nC
Qoss
27nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
TA = 25°C
Current (VGS ≥ 4.5V)
TA = 70°C
Pulsed Drain Current
Power Dissipation
TA = 25°C
Symbol
IRF7822
VDS
30
VGS
±12
ID
18
IDM
150
PD
3.1
13
TA = 70°C
Units
V
A
W
3.0
TJ, TSTG
–55 to 150
°C
Continuous Source Current (Body Diode)
IS
3.8
A
Pulsed Source Current
ISM
150
Parameter
Maximum Junction-to-Ambientƒ
RθJA
Max.
40
Units
°C/W
Maximum Junction-to-Lead
RθJL
20
°C/W
Junction & Storage Temperature Range
Thermal Resistance
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9/30/04
IRF7822PbF
Electrical Characteristics
Parameter
Drain-to-Source
Breakdown Voltage
BVDSS
Static Drain-Source
on Resistance
RDS(on)
Gate Threshold Voltage
VGS(th)
Drain-Source Leakage
Current
IDSS
Min
Typ
Max
Units
30
–
–
V
5.0
6.5
mΩ
1.0
V
30
Current*
150
Conditions
VGS = 0V, ID = 250µA
VGS = 4.5V, ID = 15A‚
VDS = VGS,ID = 250µA
VDS = 24V, VGS = 0
µA
VDS = 24V, VGS = 0,
Tj = 100°C
Gate-Source Leakage
Current
IGSS
±100
nA
Total Gate Chg Cont FET
QG
44
Total Gate Chg Sync FET
QG
38
VGS = 5.0V, VDS< 100mV
Pre-Vth
Gate-Source Charge
QGS1
13
VDS = 16V, ID = 15A
Post-Vth
Gate-Source Charge
QGS2
3.0
Gate to Drain Charge
QGD
9.0
Switch Chg(Qgs2 + Qgd)
Qsw
12
60
VGS=5.0V, ID=15A, VDS =16V
nC
Output Charge
Qoss
27
Gate Resistance
RG
1.5
Turn-on Delay Time
td (on)
15
Rise Time
tr
5.5
Turn-off Delay Time
td
22
Fall Time
tf
Input Capacitance
Ciss
–
5500
–
Output Capacitance
Coss
–
1000
–
Reverse Transfer Capacitance Crss
–
300
–
Typ
Max
Units
1.0
V
(off)
VGS = ±12V
VDS = 16V, VGS = 0
Ω
VDD = 16V, ID = 15A
ns
VGS = 5.0V
Clamped Inductive Load
12
pF
VDS = 16V, VGS = 0
Source-Drain Rating & Characteristics
Parameter
Min
Diode Forward
Voltage*
VSD
Reverse Recovery
Charge„
Qrr
Reverse Recovery
Charge (with Parallel
Schottky)„
Qrr(s)
Notes:
2

‚
ƒ
„
…
120
nC
Conditions
IS = 15A‚, VGS = 0V
di/dt ~ 700A/µs
VDS = 16V, VGS = 0V, IS = 15A
108
nC
di/dt = 700A/µs
(with 10BQ040)
VDS = 16V, VGS = 0V, IS = 15A
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Typ = measured - Qoss
Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and Q OSS
measured at VGS = 5.0V, IF = 15A.
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IRF7822PbF
6
ID = 15A
5
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 4.5V
0
20
40
60
4
2
1
0
80 100 120 140 160
0
TJ , Junction Temperature ( °C)
10
20
30
40
50
QG, Total Gate Charge (nC)
Fig 1. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Gate Charge Vs.
Gate-to-Source Voltage
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
0.010
Coss = Cds + Cgd
0.009
C, Capacitance(pF)
RDS(on) , Drain-to -Source On Resistance (Ω)
I D = 15A
VDS = 24V
VGS , Gate-to-Source Voltage (V)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
10000
0.008
0.007
ID = 15A
0.006
Ciss
Coss
1000
Crss
0.005
0.004
100
1
0.003
3.0
4.0
5.0
6.0
VGS, Gate -to -Source Voltage (V)
Fig 3. On-Resistance Vs. Gate Voltage
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7.0
10
100
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Capacitance Vs.
Drain-to-Source Voltage
3
IRF7822PbF
100
T J = 175°C
ISD , Reverse Drain Current (A)
ID, Drain-to-Source Current (Α)
100.00
10.00
T J = 25°C
VDS = 15V
20µs PULSE WIDTH
1.00
1.0
2.0
3.0
4.0
5.0
TJ = 150 ° C
10
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.5
0.7
1.0
1.2
VSD ,Source-to-Drain Voltage (V)
VGS, Gate-to-Source Voltage (V)
Fig 5. Typical Transfer Characteristics
Fig 6. Typical Source-Drain Diode
Forward Voltage
100
(Z thJA)
D = 0.50
10
0.20
0.10
Thermal Response
0.05
1
0.02
0.01
0.1
P DM
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D =
2. Peak T
0.01
0.00001
0.0001
0.001
0.01
0.1
t1 / t 2
J = P DM x Z thJA
1
+TA
10
100
t 1, Rectangular Pulse Duration (sec)
Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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IRF7822PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D
DIM
B
8
6
7
6
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
e1
.025 BASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
A
5
H
E
1
6X
2
3
0.25 [.010]
4
A
e
e1
8X b
0.25 [.010]
A
MILLIMET ERS
MAX
5
A
INCHES
MIN
MAX
K x 45°
C
y
0.10 [.004]
A1
8X L
8X c
7
C A B
FOOT PRINT
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O
A SUBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F 7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF T HE YEAR
WW = WEEK
A = AS SEMBLY S IT E CODE
LOT CODE
PART NUMBER
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5
IRF7822PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/04
6
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