EMLSI EM641FP16

merging Memory & Logic Solutions Inc.
EM641FP16 Series
Low Power, 256Kx16 SRAM
Document Title
256K x16 bit Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No.
History
Draft Date
Remark
October 24 , 2002
Preliminary
0.0
Initial Draft
0.1
2’nd Draft
Changed Icc, Icc1 value
November 11 , 2002
0.2
3’rd Draft
Changed ISB1 test conditions,
December 23 , 2002
Changed VDR & IDR
measurement condition
0.3
4’th Draft
Add Pb-free part number
February 13 , 2004
Emerging Memory & Logic Solutions Inc.
IT Venture Tower Eastside 11F, 78, Karac-Dong, Songpa-Ku, Seoul, Rep.of Korea Zip Code : 138-160
Tel : +82-2-2142-1759~1766 Fax : +82-2-2142-1769 / Homepage : www.emlsi.com
The attached datasheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your
questions about device. If you have any questions, please contact the EMLSI office.
1
EM641FP16 Series
merging Memory & Logic Solutions Inc.
Low Power, 256Kx16 SRAM
FEATURES
GENERAL DESCRIPTION
•
•
•
•
•
•
The EM641FP16 families are fabricated by EMLSI’s
advanced full CMOS process technology. The families
support industrial temperature range and Chip Scale
Package for user flexibility of system design. The families also supports low data retention voltage for battery
back-up operation with low data retention current.
Process Technology : 0.18µm Full CMOS
Organization : 256K x 16 bit
Power Supply Voltage : 1.65V ~ 2.2V
Low Data Retention Voltage : 1.0V(Min.)
Three state outputs
Package Type : 48-FPBGA 6.0x7.0
PRODUCT FAMILY
Power Dissipation
Product
Family
Operating
Temperature
Vcc
Range
Industrial (-40 ~ 85o C)
EM641FP16
Speed
Standby
(ISB1 , Typ.)
1 µA
70ns1 )
1.65~2.2V
PKG
Type
Operating
(ICC1.Max)
48-FPBGA
(6.0x7.0)
2 mA
1. The parameter is measured with 30pF test load.
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
1
2
3
4
5
6
A
LB
OE
A0
A1
A2
DNU
B
I/O 9
UB
A3
A4
CS
I/O1
Pre-charge Circuit
I/O10 I/O11
A5
A6
I/O2
I/O3
D
V SS
I/O12
A17
A7
I/O4
VCC
E
VC C
I/O13
DNU
A16
I/O5
V SS
VCC
Row S elect
C
A0
A1
A2
A3
A4
A5
A6
A7
I/O15 I/O14
A14
A15
I/O6
I/O7
G
I/O16 DNU
A12
A13
WE
I/O8
H
DNU
A9
A10
A11
DNU
A8
I/O1 ~ I/O8
UB
LB
Name
Function
CS
Chip select input
Vcc
Power Supply
OE
Output Enable input
Vss
Ground
WE
Write Enable input
UB
Upper Byte (I/O 9~16)
Address Inputs
LB
Lower Byte (I/O 1~8 )
A 0 ~A17
I/O1 ~I/O 16 Data Inputs/outputs
DNU
I/O Circuit
Column Select
A11 A12 A13 A14 A15 A16 A17
WE
OE
Function
Data
Cont
Data
Cont
48-FPBGA : Top view (ball down)
Name
2048 x 2048
A8
A9
A10
I/O9 ~ I/O16
F
VSS
Memory Array
CS
Do Not Use
2
Control Logic
merging Memory & Logic Solutions Inc.
EM641FP16 Series
Low Power, 256Kx16 SRAM
ABSOLUTE MAXIMUM RATINGS *
Parameter
Symbol
Voltage on Any Pin Relative to Vss
Minimum
Unit
VIN , VOUT
-0.5 to 2.5V
V
VCC
-0.3 to 2.5V
V
Power Dissipation
PD
1.0
W
Operating Temperature
TA
-40 to 85
oC
Voltage on Vcc supply relative to Vss
* Stresses greater than those listed above “Absolute Maximum Ratings” may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
FUNCTIONAL DESCRIPTION
CS
OE
WE
LB
UB
I/O 1-8
I/O9-16
Mode
Power
H
X
X
X
X
High-Z
High-Z
Deselected
Stand by
X
X
X
H
H
High-Z
High-Z
Deselected
Stand by
L
H
H
L
X
High-Z
High-Z
Output Disabled
Active
L
H
H
X
L
High-Z
High-Z
Output Disabled
Active
L
L
H
L
H
Data Out
High-Z
Lower Byte Read
Active
L
L
H
H
L
High-Z
Data Out
Upper Byte Read
Active
L
L
H
L
L
Data Out
Data Out
Word Read
Active
L
X
L
L
H
Data In
High-Z
Lower Byte Write
Active
L
X
L
H
L
High-Z
Data In
Upper Byte Write
Active
L
X
L
L
L
Data in
Data In
Word Write
Active
Note: X means don’t care. (Must be low or high state)
3
EM641FP16 Series
merging Memory & Logic Solutions Inc.
Low Power, 256Kx16 SRAM
RECOMMENDED DC OPERATING CONDITIONS 1)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
VCC
1.65
1.8
2.2
V
Ground
VSS
0
0
0
V
Input high voltage
VIH
1.4
-
VCC + 0.3 2)
V
Input low voltage
VIL
-0.33)
-
0.4
V
1.
2.
3.
4.
TA= -40 to 85oC, otherwise specified
Overshoot: V CC +1.0 V in case of pulse width < 20ns
Undershoot: -1.0 V in case of pulse width < 20ns
Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE 1) (f =1MHz, TA=25oC)
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C IN
VIN=0V
-
8
pF
Input/Ouput capacitance
CIO
VIO =0V
-
10
pF
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
ILI
V IN=V SS to V CC
-1
-
1
uA
Output leakage current
ILO
CS = VIH or OE=V IH or WE=V IL, LB=UB=VIH ,
V IO =VSS to V CC
-1
-
1
uA
Operating power supply
I CC
IIO =0mA, CS = VIL , VIN = VIH or VIL
-
-
2
mA
-
-
2
mA
Cycle time=1µs, 100% duty, IIO=0mA,
ICC1
Average operating current
CS <0.2V, LB<0.2V or/and UB<0.2V,
V IN< 0.2V or VIN >V CC-0.2V
ICC2
Cycle time = Min, I IO =0mA, 100% duty,
CS = VIL, LB=VIL or/and UB=V IL, VIN=V IL or VIH
-
-
12
mA
Output low voltage
VOL
IOL = 2.1mA
-
-
0.2
V
Output high voltage
VOH
IOH = -1.0mA
1.4
-
-
V
-
1
5
uA
CS >V CC-0.2V(CS controlled) or
Standby Current (CMOS)
ISB1
LB=UB ≥ V CC-0.2V, CS<0.2V(LB/UB Controlled)
Other inputs=0~VCC
(Typ. condition : V CC =1.8V @ 25o C)
(Max. condition : VCC=2.2V @ 85 oC)
4
LL
LF
EM641FP16 Series
merging Memory & Logic Solutions Inc.
Low Power, 256Kx16 SRAM
VTM 3)
AC OPERATING CONDITIONS
Test Conditions (Test Load and Test Input/Output Reference)
R12)
Input Pulse Level : 0.2 to VCC-0.2V
Input Rise and Fall Time : 5ns
Input and Output reference Voltage : 0.9V
Output Load (See right) : CL = 100pF+ 1 TTL
CL1) = 30pF + 1 TTL
1. Including scope and Jig capacitance
2. R1=3070 ohm ,
R2 =3150 ohm
3. VTM=1.8V
R22)
CL1)
READ CYCLE (V cc =1.65 to 2.2V, Gnd = 0V, TA = -40oC to +85oC)
Parameter
Symbol
70ns
Min
Max
Unit
Read Cycle Time
tRC
70
-
ns
Address Access Time
tA A
-
70
ns
Chip Select to output
tCO
-
70
ns
Output Enable to valid output
tOE
-
35
ns
UB, LB Acess time
tB A
70
ns
Chip select to low-Z output
tLZ
10
-
ns
UB, LB enable to low-Z output
tBLZ
10
-
ns
Output Enable to Low-Z output
tOLZ
5
-
ns
Chip disable to high-Z output
tHZ
0
25
ns
UB, LB disable to high-Z output
tBHZ
0
25
ns
Output disable to high-Z output
tOHZ
0
25
ns
Output hold from address change
tOH
10
-
ns
WRITE CYCLE (Vcc =1.65 to 2.2V, Gnd = 0V, TA = -40oC to +85oC)
Parameter
Symbol
70ns
Unit
Min
Max
Write Cycle Time
tWC
70
-
ns
Chip Select to end of write
tCW
60
-
ns
Address Setup time
tAs
0
-
ns
Address valid to end of write
tAW
60
-
ns
UB, LB valid to end of write
tBW
60
-
ns
Write pulse width
tWP
55
-
ns
Write recovery time
tWR
0
-
ns
Write to ouput high-Z
tWHZ
0
25
ns
Data to write time overlap
tDW
30
Data hold from write time
tDH
0
-
ns
End write to output low-Z
tOW
5
-
ns
5
ns
merging Memory & Logic Solutions Inc.
EM641FP16 Series
Low Power, 256Kx16 SRAM
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1).
(Address Controlled, CS=OE=V IL, WE=V IH, UB or/and LB= VIL)
tRC
Address
tAA
tOH
Data Out
Previous Data Valid
Data Valid
TIMING WAVEFORM OF READ CYCLE(2) (WE = VIH)
tRC
Address
tAA
tOH
tCO
CS
tHZ
tB A
UB ,LB
tBHZ
tO E
OE
tOHZ
tOLZ
Data Out
High-Z
Data Valid
tBLZ
tLZ
NOTES (READ CYCLE)
1. t HZ and tOHZ are defined as the outputs achieve the open circuit conditions and are not referanced to output voltage levels.
2. At any given temperature and voltage condition, t HZ(Max.) is less than t LZ(Min.) both for a given device and from device to device
interconnection.
6
EM641FP16 Series
merging Memory & Logic Solutions Inc.
Low Power, 256Kx16 SRAM
TIMING WAVEFORM OF WRITE CYCLE(1) (WE CONTROLLED)
tWC
Address
tCW (2)
tWR (4)
CS
tAW
tBW
UB ,LB
tWP (1)
WE
tAS(3)
Data in
tDH
tDW
High-Z
High-Z
Data Valid
tWHZ
Data out
tOW
Data Undefined
TIMING WAVEFORM OF WRITE CYCLE(2) (CS CONTROLLED)
tWC
Address
tAS(3)
tCW (2)
tWR (4)
CS
tAW
tBW
UB,LB
tWP (1)
WE
tDW
Data in
Data out
Data Valid
High-Z
High-Z
7
tDH
EM641FP16 Series
merging Memory & Logic Solutions Inc.
Low Power, 256Kx16 SRAM
TIMING WAVEFORM OF WRITE CYCLE(3) (UB, LB CONTROLLED)
tWC
Address
tCW(2)
tW R(4)
CS
tA W
tB W
UB ,LB
tW P(1)
tA S(3)
WE
tDW
Data in
Data out
tDH
Data Valid
High-Z
High-Z
NOTES (WRITE CYCLE)
1. A write occurs during the overlap(tWP ) of low CS and low WE. A write begins when CS goes low and WE
goes low with asserting UB or LB for single byte operation or simultaneously asserting UB and LB for double
byte operation. A write ends at the earliest transition when CS goes high and WE goes high. The tWP is
measured from the beginning of write to the end of write.
2. t CW is measured from the CS going low to end of write.
3. t A S is measured from the address valid to the beginning of write.
4. t WR is measured from the end or write to the address change. tWR applied in case a write ends as CS
or WE going high.
8
EM641FP16 Series
merging Memory & Logic Solutions Inc.
Low Power, 256Kx16 SRAM
DATA RETENTION CHARACTERISTICS
Parameter
Symbol
VCC for Data Retention
VDR
Data Retention Current
IDR
Chip Deselect to Data Retention Time
Operation Recovery Time
tSDR
Test Condition
ISB1 Test Condition
(Chip Disabled)
1)
VCC=1.2V, I SB1 Test Condition
(Chip Disabled) 1 )
Min
Typ
Max
Unit
1.0
-
2.2
V
-
0.5
2
uA
0
-
-
tRC
-
-
See data retention wave form
tRDR
ns
NOTES
1. See the IS B 1 measurement condition of datasheet page 4.
DATA RETENTION WAVE FORM
tSDR
Data Retention Mode
Vcc
1.65V
1.4V
VDR
CS > Vcc-0.2V or LB =UB ≥ V CC-0.2V
CS,LB/UB
GND
9
tRDR
EM641FP16 Series
merging Memory & Logic Solutions Inc.
Low Power, 256Kx16 SRAM
Unit: millimeters
PACKAGE DIMENSION
48 Ball Fine Pitch BGA (0.75mm ball pitch)
Bottom View
Top View
A1 index Mark
B
B1
6
5
4
3
0.5
0.5
B
2 1
A
B
#A1
C
C1
C
C
D
C1/2
E
F
G
H
B/2
E2
0.26
Side View
Detail A
D
0.25 Typ.
E
E1
A
Min
Typ
Max
A
-
0.75
-
B
5.95
6.00
6.05
B1
-
3.75
-
C
6.95
7.00
7.05
C1
-
5.25
-
D
0.30
0.35
0.40
E
1.00
1.04
1.10
E1
-
0.79
-
E2
-
0.25
-
Y
-
-
0.08
0.79Typ.
C
Y
NOTES.
1. Bump counts : 48(8row x 6column)
2. Bump pitch : (x,y)=(0.75x0.75) (typ.)
3. All tolerence are +/-0.050 unless
otherwise specified.
4. Typ : Typical
5. Y is coplanarity : 0.08(Max)
10
merging Memory & Logic Solutions Inc.
EM641FP16 Series
Low Power, 256Kx16 SRAM
MEMORY FUNCTION GUIDE
EM X XX X X X XX X X - XX XX
1. EMLSI Memory
11. Power
2. Device Type
10. Speed
3. Density
4. Option
9. Packages
5. Technology
8. Version
6. Operating Voltage
7. Orgainzation
1. Memory Component
8. Version
Blank ----------------- Mother die
A ----------------------- First version
B ----------------------- Second version
C ----------------------- Third version
D ----------------------- Fourth version
E ----------------------- Fifth version
2. Device Type
6 ------------------------ Low Power SRAM
7 ------------------------ Pseudo SRAM
3. Density
1 ------------------------- 1M
2 ------------------------- 2M
4 ------------------------- 4M
8 ------------------------- 8M
16 ----------------------- 16M
32 ----------------------- 32M
64 ----------------------- 64M
9. Package
Blank ---------------------- Package
W --------------------- Wafer
10. Speed
45 ---------------------- 45ns
55 ---------------------- 55ns
70 ---------------------- 70ns
85 ---------------------- 85ns
10 --------------------- 100ns
12 --------------------- 120ns
4. Option
0 ----------------------- Dual CS
1 ----------------------- Single CS
5. Technology
Blank ------------------ CMOS
F ------------------------ Full CMOS
11. Power
LL ---------------------- Low Low Power
LF ---------------------- Low Low Power(Pb-Free)
L ---------------------- Low Power
S ---------------------- Standard Power
6. Operating Voltage
Blank ------------------- 5V
V ------------------------- 3.3V
U ------------------------- 3.0V
S ------------------------- 2.5V
R ------------------------- 2.0V
P ------------------------- 1.8V
7. Orginzation
8 ---------------------- x8 bit
16 ---------------------- x16 bit
32 ---------------------- x32 bit
11