UF2840P RF Power MOSFET Transistor 40W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration Lower noise floor ABSOLUTE MAXIMUM RATINGS AT 25° C Symbol Rating Units Drain-Source Voltage Parameter VDS 65 V Gate-Source Voltage VGS 20 V Drain-Source Current IDS 4* A Power Dissipation PD 116 W Junction Temperature TJ 200 °C Storage Temperature TSTG -55 to 150 °C θJC 1.5 °C/W Thermal Resistance TYPICAL DEVICE IMPEDANCES F (MHz) ZIN (Ω) ZLOAD (Ω) 100 6.0-j20.0 25.0j27.0 300 2.5-j5.5 13.0+j13.0 500 4.0+j3.0 12.0j5.0 VDD=28V, IDQ=500 mA, POUT =40.0 W ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. ELECTRICAL CHARACTERISTICS AT 25°C Parameter Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Symbol Min Max Units BVDSS 65 - V VGS = 0.0 V , IDS = 5.0 mA Test Conditions IDSS - 1.0 mA VGS = 28.0 V , VGS = 0.0 V IGSS - 1.0 µA VGS = 20.0 V , VDS = 0.0 V VGS(TH) 2.0 6.0 V VDS = 10.0 V , IDS = 100.0 mA Forward Transconductance GM .5 - S VDS = 10.0 V , IDS 1.0 A , Δ VGS = 1.0V, 80 μs Pulse Input Capacitance CISS - 45 pF VDS = 28.0 V , F = 1.0 MHz Output Capacitance COSS - 30 pF VDS = 28.0 V , F = 1.0 MHz Reverse Capacitance CRSS - 8 pF VDS = 28.0 V , F = 1.0 MHz GP 10 - dB VDD = 28.0 V, IDQ = 500.0 mA, POUT = 40.0 W F =500 MHz ŋD 50 - % VDD = 28.0 V, IDQ = 500.0 mA, POUT = 40.0 W F =500 MHz VSWR-T - 20:1 - VDD = 28.0 V, IDQ = 500.0 mA, POUT = 40.0 W F =500 MHz Gate Threshold Voltage Power Gain Drain Efficiency Load Mismatch Tolerance *Per side 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. UF2840P RF Power MOSFET Transistor 40W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant Typical Broadband Performance Curves CAPACITANCES VS VOLTAGE F=1.0MHz 40 50 POPWER OUTPUT (W) CAPACTANCES (pF) 35 30 COSS 25 20 CISS 15 10 CRSS 5 POWER OUTPUT VS VOLTAGE PIN=3.0 W IDQ=500 mA POUT=500 W 40 30 20 10 0 0 5 10 20 15 5 30 25 10 15 VDS(V) 30 GAIN VS FREQUENCY VDD =28 V POUT=40 W IDQ =500 mA 65 EFFICIENCY (W) GAIN (dB) 20 15 200 300 35 60 55 50 100 500 400 EFFICIENCY VS FREQUENCY VDD=28V IDQ =500 mA POUT =40 W 200 FREQUENCY (MHz) 300 400 FREQUENCY (MHz) POWER OUTPUT VS POWER INPUT VDD =28 V IDQ =500 mA 60 POWER OUTPUT (W) 25 VDD(V) 25 10 100 20 50 100MHz 500 MHz 300MHz 40 30 10 0 0.1 0.25 1 2 2.5 POWER INPUT (W) 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. 500 UF2840P RF Power MOSFET Transistor 40W, 100-500 MHz, 28V M/A-COM Products Released; RoHS Compliant TEST FIXTURE SCHEMATIC V DS = 2 8 V OL T S I DQ = 5 00mA V GS J3 L1 L4 C12 L2 C10 C9 R1 R2 Q1A RF I N J1 L3 C14 R3 C5 T3 C2 + V DD J4 C7 T1 T2 C1 C11 C13 RF OUT J2 C8 C3 C6 C4 Q1B TEST FIXTURE SCHEMATIC 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.