MOTOROLA MC74HC174AN

SEMICONDUCTOR TECHNICAL DATA
! High–Performance Silicon–Gate CMOS
The MC54/74HC174A is identical in pinout to the LS174. The device
inputs are compatible with standard CMOS outputs; with pullup resistors,
they are compatible with LSTTL outputs.
This device consists of six D flip–flops with common Clock and Reset
inputs. Each flip–flop is loaded with a low–to–high transition of the Clock
input. Reset is asynchronous and active–low.
16
•
•
•
•
•
•
16
Output Drive Capability: 10 LSTTL Loads
TTL NMOS Compatible Input Levels
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 4.5 to 5.5 V
Low Input Current: 1.0 µA
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
• Chip Complexity: 162 FETs or 40.5 Equivalent Gates
J SUFFIX
CERAMIC PACKAGE
CASE 620–10
1
N SUFFIX
PLASTIC PACKAGE
CASE 648–08
1
D SUFFIX
SOIC PACKAGE
CASE 751B–05
16
1
ORDERING INFORMATION
MC54HCXXXAJ
MC74HCXXXAN
MC74HCXXXAD
LOGIC DIAGRAM
D0 3
D1 4
DATA
INPUTS
2 Q0
5
Q1
7 Q2
D2 6
D3 11
10 Q3
12 Q4
D4 13
14
D5
15
NONINVERTING
OUTPUTS
PIN ASSIGNMENT
RESET
1
16
VCC
Q0
2
15
Q5
D0
3
14
D5
D1
4
13
D4
Q1
5
12
Q4
Q5
CLOCK 9
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Design Criteria
Value
Units
Internal Gate Count*
40.5
ea.
Internal Gate Propagation Delay
1.5
ns
Internal Gate Power Dissipation
5.0
µW
Speed Power Product
6
11
D3
7
10
Q3
GND
8
9
.0075
Inputs
pJ
10/95
1
CLOCK
FUNCTION TABLE
* Equivalent to a two–input NAND gate.
 Motorola, Inc. 1995
D2
Q2
PIN 16 = VCC
PIN 8 = GND
RESET 1
Ceramic
Plastic
SOIC
REV 6
Output
Reset
Clock
D
Q
L
H
H
H
H
X
X
H
L
X
X
L
H
L
No Change
No Change
L
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MC54/74HC174A
MAXIMUM RATINGS*
Symbol
VCC
Parameter
DC Supply Voltage (Referenced to GND)
Value
Unit
– 0.5 to + 7.0
V
Vin
DC Input Voltage (Referenced to GND)
– 1.5 to VCC + 1.5
V
Vout
DC Output Voltage (Referenced to GND)
–0.5 to VCC + 0.5
V
DC Input Current, per Pin
± 20
mA
Iout
DC Output Current, per Pin
± 25
mA
ICC
DC Supply Current, VCC and GND Pins
± 50
mA
PD
Power Dissipation in Still Air, Plastic or Ceramic DIP†
SOIC Package†
750
500
mW
Tstg
Storage Temperature
– 65 to + 150
_C
Iin
TL
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND (Vin or Vout) VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
v
v
_C
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
(Ceramic DIP)
260
300
* Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
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RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Vin, Vout
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
TA
Operating Temperature, All Package Types
tr, tf
Input Rise and Fall Time (Figure 1)
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
Min
Max
Unit
2.0
6.0
V
0
VCC
V
– 55
+ 125
_C
0
0
0
1000
500
400
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
VCC
V
– 55 to
25_C
85_C
125_C
Unit
VIH
Minimum High–Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout|
20 µA
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
VIL
Maximum Low–Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout|
20 µA
2.0
4.5
6.0
0.5
1.35
1.8
0.5
1.35
1.8
0.5
1.35
1.8
V
Minimum High–Level Output
Voltage
Vin = VIH or VIL
|Iout|
20 µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
Vin = VIH or VIL
|Iout|
4.0 mA
|Iout|
5.2 mA
4.5
6.0
3.98
5.48
3.84
5.34
3.7
5.2
Vin = VIH or VIL
|Iout|
20 µA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
Vin = VIH or VIL
|Iout|
4.0 mA
|Iout|
5.2 mA
4.5
6.0
0.26
0.26
0.33
0.33
0.4
0.4
VOH
VOL
MOTOROLA
Maximum Low–Level Output
Voltage
2
V
High–Speed CMOS Logic Data
DL129 — Rev 6
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MC54/74HC174A
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Iin
Maximum Input Leakage Current
Maximum Quiescent Supply
Current (per Package)
ICC
VCC
V
– 55 to
25_C
Vin = VCC or GND
6.0
± 0.1
± 1.0
± 1.0
µA
Vin = VCC or GND
Iout = 0 µA
6.0
4.0
40
160
µA
Test Conditions
85_C
125_C
Unit
NOTES:
1. Information on typical parametric values along with high frequency or heavy load considerations, can be found in Chapter 2 of the Motorola
High–Speed CMOS Data Book (DL129/D).
2. Total Supply Current = ICC + S∆ICC.
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)
Guaranteed Limit
Symbol
Parameter
VCC
V
– 55 to
25_C
85_C
125_C
Unit
fmax
Maximum Clock Frequency (50% Duty Cycle)
(Figures 1 and 4)
2.0
4.5
6.0
6.0
30
35
4.8
24
28
4.0
20
24
MHz
tPLH
tPHL
Maximum Propagation Delay, Clock to Q
(Figures 1 and 4)
2.0
4.5
6.0
110
22
19
140
28
24
165
33
28
ns
tPLH
tPHL
Maximum Propagation Delay, Reset to Q
(Figures 2 and 4)
2.0
4.5
6.0
110
21
19
140
28
24
160
32
27
ns
tTLH
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 4)
2.0
4.5
6.0
75
15
13
95
19
16
110
22
19
ns
10
10
10
pF
Cin
Maximum Input Capacitance
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the Motorola High–
Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
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CPD
Power Dissipation Capacitance (Per Enabled Output)*
pF
62
* Used to determine the no–load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
TIMING REQUIREMENTS (CL = 50 pF, Input tr = tf = 6.0 ns)
Guaranteed Limit
Symbol
Parameter
Fig.
VCC
V
– 55 to 25_C
Min
Max
85_C
Min
Max
125_C
Min
Max
Unit
tsu
Minimum Setup Time, Data to Clock
3
2.0
4.5
6.0
50
10
9.0
65
13
11
75
15
13
ns
th
Minimum Hold Time, Clock to Data
3
2.0
4.5
6.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
ns
Minimum Recovery Time, Reset Inactive to Clock
2
2.0
4.5
6.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
ns
tw
Minimum Pulse Width, Clock
1
2.0
4.5
6.0
75
15
13
95
19
16
110
22
19
ns
tw
Minimum Pulse Width, Reset
2
2.0
4.5
6.0
75
15
13
95
19
16
110
22
19
ns
Maximum Input Rise and Fall Times
1
2.0
4.5
6.0
trec
tr, tf
High–Speed CMOS Logic Data
DL129 — Rev 6
3
1000
500
400
1000
500
400
1000
500
400
ns
MOTOROLA
MC54/74HC174A
EXPANDED LOGIC DIAGRAM
CLOCK
9
D0
3
RESET
1
D1
4
D2
6
C
D
Q
2
Q
5 Q1
C
D
R
C
D
Q
10
Q
12
D
D
Q
15 Q5
Q4
R
C
D5 14
Q3
R
C
13
Q2
R
C
D4
7
Q
D
D3 11
Q0
R
R
SWITCHING WAVEFORMS
tr
CLOCK
tf
VCC
90%
50%
10%
VCC
50%
GND
tw
GND
tPHL
1/fmax
tPLH
Q
tw
RESET
tPHL
Q
90%
50%
10%
trec
VCC
50%
tTLH
CLOCK
tTHL
Figure 1.
GND
Figure 2.
TEST POINT
VALID
OUTPUT
VCC
DATA
DEVICE
UNDER
TEST
50%
GND
tsu
CL*
th
VCC
CLOCK
50%
* Includes all probe and jig capacitance
GND
Figure 3.
MOTOROLA
Figure 4. Test Circuit
4
High–Speed CMOS Logic Data
DL129 — Rev 6
MC54/74HC174A
OUTLINE DIMENSIONS
J SUFFIX
CERAMIC PACKAGE
CASE 620–10
ISSUE V
–A
–
16
9
1
8
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
4. DIM F MAY NARROW TO 0.76 (0.030) WHERE
THE LEAD ENTERS THE CERAMIC BODY.
–B
–
L
C
DIM
A
B
C
D
E
F
G
J
K
L
M
N
–T
K
N
SEATING
–
PLANE
E
M
F
J 16 PL
0.25 (0.010)
G
D 16 PL
0.25 (0.010)
T A
M
9
1
8
T B
N SUFFIX
PLASTIC PACKAGE
CASE 648–08
ISSUE R
–A
–
16
M
C
DIM
A
B
C
D
F
G
H
J
K
L
M
S
L
S
–T
–
SEATING
PLANE
K
H
D 16 PL
0.25 (0.010)
M
M
J
G
T A
M
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751B–05
ISSUE J
–A
–
16
1
P 8 PL
0.25 (0.010)
8
M
B
M
G
K
F
R X 45°
C
–T
SEATING
–
PLANE
J
M
D 16 PL
0.25 (0.010)
High–Speed CMOS Logic Data
DL129 — Rev 6
M
T
B
S
A
S
5
INCHES
MILLIMETERS
MIN
MAX
MIN
MAX
0.740 0.770 18.80 19.55
6.35
0.250 0.270
6.85
3.69
0.145 0.175
4.44
0.39
0.015 0.021
0.53
1.02
0.040 0.070
1.77
0.100 BSC
2.54 BSC
0.050 BSC
1.27 BSC
0.21
0.008 0.015
0.38
2.80
0.110 0.130
3.30
7.50
0.295 0.305
7.74
0°
0°
10°
10°
0.020 0.040
0.51
1.01
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
9
–B
–
MILLIMETERS
MIN
MAX
19.05 19.93
6.10
7.49
—
5.08
0.39
0.50
1.27 BSC
1.40
1.65
2.54 BSC
0.21
0.38
3.18
4.31
7.62 BSC
15°
0°
1.01
0.51
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
B
F
S
S
INCHES
MIN
MAX
0.750 0.785
0.240 0.295
—
0.200
0.015 0.020
0.050 BSC
0.055 0.065
0.100 BSC
0.008 0.015
0.125 0.170
0.300 BSC
15°
0°
0.020 0.040
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
9.80 10.00
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0°
7°
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.386 0.393
0.150 0.157
0.054 0.068
0.014 0.019
0.016 0.049
0.050 BSC
0.008 0.009
0.004 0.009
0°
7°
0.229 0.244
0.010 0.019
MOTOROLA
MC54/74HC174A
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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*MC54/74HC174A/D*
MC54/74HC174A/D
High–Speed CMOS Logic Data
DL129 — Rev 6