MA-COM PH1214

Radar Pulsed Power Transistor, 100 Watts,
1.2 - 1.4 GHz, 2 ms Pulse, 20% Duty
8/21/02
PH1214-100EL
Rev. 3
Features
Q
Q
Q
Q
Q
Q
Q
Q
Outline Drawing
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
Absolute Maximum Ratings at 25 °C
Parameter
Symbol
Rating
Units
Collector-Emitter Voltage
VCES
70
V
Emitter-Base Voltage
VEBO
3.0
V
Collector Current (Peak)
IC
14.1
A
Total Power Dissipation
@ +45 °C
PTOT
214
W
Storage Temperature
TSTG
-65 to +200
°C
Junction Temperature
Tj
200
°C
Electrical Characteristics at 25 °C
Parameter
Symbol
Min.
Max.
Units
Collector-Emitter Breakdown
BVCES
70
-
V
IC=50 mA
ICES
-
10
mA
VCE=28 V
RTH(JC)
-
0.7
°C/W
VCC=28 V, PIN = 25 W, Freq= 1.20, 1.30, 1.40 GHz
Output Power
PO
100
-
W
VCC=28 V, PIN = 25 W, Freq= 1.20, 1.30, 1.40 GHz
Power Gain
GP
6.0
-
dB
VCC=28 V, PIN = 25 W, Freq= 1.20, 1.30, 1.40 GHz
Collector Efficiency
η
52
-
%
VCC=28 V, PIN = 25 W, Freq= 1.20, 1.30, 1.40 GHz
Input Return Loss
RL
8
-
dB
VCC=28 V, PIN = 25 W, Freq= 1.20, 1.30, 1.40 GHz
Overdrive Stability
OD-S
-
+1.0
dB
VCC=28 V, PIN = 25 W, Freq= 1.20, 1.30, 1.40 GHz
Load Mismatch Tolerance
VSWR-T
-
3:1
-
VCC=28 V, PIN = 25 W, Freq= 1.20, 1.30, 1.40 GHz
Load Mismatch Stability
VSWR-S
-
1.5:1
-
VCC=28 V, PIN = 25 W, Freq= 1.20, 1.30, 1.40 GHz
Collector-Emitter Leakage
Thermal Resistance
Test Conditions
Radar Pulsed Power Transistor, 100 Watts, 1.2-1.4 GHz, 2ms Pulse, 20% Duty
PH1214-100EL
8/21/02
Rev. 3
Broadband Test Fixture Impedances
TEST FIXTURE
INPUT
CIRCUIT
50Ω
Z IF
TEST FIXTURE
OUTPUT
CIRCUIT
Z OF
50Ω
F (GHz)
Z IF (Ω)
Z OF (Ω)
1.20
2.6 –j3.8
3.0 –j2.7
1.30
3.0 –j3.4
2.4 –j2.6
1.40
3.4 –j3.1
1.9 –j2.5
Test Fixture Assembly
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or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
2
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