UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251 DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES TO-220F TO-220F1 1 TO-252 * RDS(ON) = 5Ω@VGS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness 1 1 Lead-free: 2N60L Halogen-free: 2N60G SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Normal Lead Free Plating 2N60-x-TA3-T 2N60L-x-TA3-T 2N60-x-TF1-T 2N60L-x-TF1-T 2N60-x-TF3-T 2N60L-x-TF3-T 2N60-x-TM3-T 2N60L-x-TM3-T 2N60-x-TN3-R 2N60L-x-TN3-R Note: Pin Assignment: G: Gate D: Drain Halogen Free 2N60G-x-TA3-T 2N60G-x-TF1-T 2N60G-x-TF3-T 2N60G-x-TM3-T 2N60G-x-TN3-R S: Source 2N60L-x-TA3-T Package TO-220 TO-220F1 TO-220F TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tape Reel (1) T: Tube, R: Tape Reel (1)Packing Type (2)Package Type (3)Drain-Source Voltage (4)Lead Plating www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd (2) TA3: TO-220, TF1: TO-220-F1, TF3: TO-220F TM3: TO-251, TN3: TO-252 (3) A: 600V, B: 650V (4) G: Halogen Free, L: Lead Free, Blank: Pb/Sn 1 of 8 QW-R502-053,I 2N60 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT 600 V Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 2.0 A Continuous ID 2.0 A Drain Current 8.0 A Pulsed (Note 2) IDM Single Pulsed (Note 3) EAS 140 mJ Avalanche Energy Repetitive (Note 2) EAR 4.5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 54 W TO-220F/TO-220F1 23 W Power Dissipation PD TO-251 44 W TO-252 44 W Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD ≤ 2.4A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 2N60-A 2N60-B THERMAL DATA PARAMETER PACKAGE TO-220 TO-220F/TO-220F1 TO-251 TO-252 TO-220 TO-220F/TO-220F1 TO-251 TO-252 Junction to Ambient Junction to Case SYMBOL θJA θJc RATINGS 62.5 62.5 50 50 2.32 5.5 2.87 2.87 UNIT °С/W °С/W ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL 2N60-A 2N60-B Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS VGS = 0V, ID = 250μA IDSS VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V IGSS MIN TYP MAX UNIT 600 650 10 100 -100 △BVDSS/△TJ ID = 250 μA, Referenced to 25°C VGS(TH) RDS(ON) CISS COSS CRSS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS VDS = VGS, ID = 250μA VGS = 10V, ID =1A VDS =25V, VGS =0V, f =1MHz 0.4 2.0 V V μA nA nA V/°С 3.8 4.0 5 V Ω 270 40 5 350 50 7 pF pF pF 2 of 8 QW-R502-053,I 2N60 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS SWITCHING CHARACTERISTICS Turn-On Delay Time tD (ON) VDD =300V, ID =2.4A, RG=25Ω Turn-On Rise Time tR (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS=480V, VGS=10V, ID=2.4A Gate-Source Charge QGS (Note 1, 2) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 2.0 A Continuous Drain-Source Current ISD Pulsed Drain-Source Current ISM VGS = 0 V, ISD = 2.4A, Reverse Recovery Time tRR di/dt = 100 A/μs (Note1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 10 25 20 25 9.0 1.6 4.3 180 0.72 30 60 50 60 11 ns ns ns ns nC nC nC 1.4 2.0 8.0 V A A ns μC 3 of 8 QW-R502-053,I 2N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver Same Type as D.U.T. VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-053,I 2N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS IAS RD 10V VDD D.U.T. ID(t) VDS(t) VDD tp tp Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Fig. 4B Unclamped Inductive Switching Waveforms 5 of 8 QW-R502-053,I 2N60 Power MOSFET Capacitance (pF) Gate-Source Voltage, VGS (V) TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R502-053,I 2N60 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) 1.2 On-Resistance vs. Temperature 3.0 VGS=10V ID=250µA Drain-Source On-Resistance, RDS(ON) (Normalized) Drain-Source Breakdown Voltage, VDSS (Normalized) Breakdown Voltage vs. Temperature 1.1 1.0 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 0.5 0.0 -100 200 Junction Temperature, TJ (°С) -50 0 50 100 150 200 Junction Temperature, TJ (°С) Drain Current, ID (A) Drain Current, ID (A) 2.5 VGS=10V ID=4.05A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-053,I 2N60 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-053,I