FDD4243 40V P-Channel PowerTrench® MOSFET -40V, -14A, 44mΩ Features General Description Max rDS(on) = 44mΩ at VGS = -10V, ID = -6.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. Max rDS(on) = 64mΩ at VGS = -4.5V, ID = -5.5A High performance trench technology for extremely low rDS(on) RoHS Compliant Application Inverter Power Supplies S D G S G D -PA K TO -2 52 (TO -252) D MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID V -Continuous (Silicon limited) TC= 25°C (Note 1) -24 -Continuous TA= 25°C (Note 1a) -6.7 -14 A -60 (Note 3) Power Dissipation TC= 25°C Power Dissipation TJ, TSTG ±20 TC= 25°C -Pulsed PD Units V -Continuous (Package limited) Single Pulse Avalanche Energy EAS Ratings -40 84 42 (Note 1a) Operating and Storage Junction Temperature Range 3 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 3.0 (Note 1a) 40 °C/W Package Marking and Ordering Information Device Marking FDD4243 ©2007 Fairchild Semiconductor Corporation FDD4243 Rev.C1 Device FDD4243 Package D-PAK(TO-252) 1 Reel Size 13’’ Tape Width 12mm Quantity 2500 units www.fairchildsemi.com FDD4243 40V P-Channel PowerTrench® MOSFET November 2007 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = -250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current V -40 -32 VDS = -32V, VGS = 0V mV/°C -1 TJ = 125°C -100 VGS = ±20V, VGS = 0V µA ±100 nA -3.0 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250µA, referenced to 25°C 4.7 VGS = -10V, ID = -6.7A 36 44 rDS(on) Drain to Source On Resistance VGS = -4.5V, ID = -5.5A 48 64 VGS = -10V, ID = -6.7A, TJ = 125°C 53 69 VDS = -5V, ID = -6.7A 16 gFS Forward Transconductance -1.4 -1.6 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = -20V, VGS = 0V, f = 1MHz 1165 1550 pF 165 220 pF 90 135 pF Ω f = 1MHz 4 VDD = -20V, ID = -6.7A VGS = -10V, RGEN = 6Ω 6 12 ns 15 26 ns 22 35 ns 7 14 ns 21 29 nC Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = -20V, ID = -6.7A VGS = -10V 3.4 nC 4 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = -6.7A (Note 2) IF = -6.7A, di/dt = 100A/µs 0.86 1.2 V 29 43 ns 30 44 nC Notes: 1: RθJA is sum of junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJC is determined by the user’s board design. a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper b. 96°C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3: Starting TJ = 25°C, L = 3mH, IAS = 7.5A, VDD = 40V, VGS = 10V. FDD4243 Rev.C1 2 www.fairchildsemi.com FDD4243 40V P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 50 40 3.5 VGS = -10V VGS = -4.5V VGS = - 6V VGS = -5V VGS = -4V 30 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 20 VGS = - 3.0V 10 0 0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 60 1 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 5 ID = -6.7A VGS = -10V 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 Figure 3. Normalized On Resistance vs Junction Temperature -IS, REVERSE DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 40 TJ = 150oC TJ = 25oC 30 20 TJ = -55oC 10 0 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) 6 VGS = -6V 2.0 1.5 VGS = -10V 1.0 0.5 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 0 10 20 30 40 -ID, DRAIN CURRENT(A) 50 60 ID = -6.7A 100 80 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX TJ = 125oC 60 TJ = 25oC 40 20 2 3 4 5 6 7 8 9 -VGS, GATE TO SOURCE VOLTAGE (V) 10 30 VGS = 0V 10 TJ = 150oC TJ = 25oC 1 TJ = -55oC 0.1 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics FDD4243 Rev.C1 VGS = -5V Figure 4. On-Resistance vs Gate to Source Voltage 60 50 2.5 120 1.8 1.6 VGS = -4V VGS = -4.5V Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On Region Characteristics VGS = -3.0V 3.0 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDD4243 40V P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 10 3000 ID = -6.7A 6 CAPACITANCE (pF) VDD = -10V 8 VDD = -20V VDD = -30V 4 2 0 1000 Coss 100 0 4 8 12 16 20 50 0.1 24 Qg, GATE CHARGE(nC) Figure 7. Gate Charge Characteristics Crss 30 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 25 8 -ID, DRAIN CURRENT (A) -IAS, AVALANCHE CURRENT(A) f = 1MHz VGS = 0V Figure 8. Capacitance vs Drain to Source Voltage 10 6 TJ = 25oC 4 2 TJ = 125oC 20 VGS = -10V 15 10 Limited by Package VGS = -4.5V 5 o RθJC = 3.0 C/W 1 0.01 0.1 1 tAV, TIME IN AVALANCHE(ms) 10 0 25 30 100 125 150 Figure 10. Maximum Continuous Drain Current vs Case Temperature 10000 P(PK), PEAK TRANSIENT POWER (W) 100us 10 1ms 1 10ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 SINGLE PULSE TJ = MAX RATED 100ms TC = 25OC 10 100 -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDD4243 Rev.C1 75 TC, CASE TEMPERATURE ( C) 100 0.1 0.5 50 o Figure 9. Unclamped Inductive Switching Capability -ID, DRAIN CURRENT (A) Ciss FOR TEMPERATURES VGS = -10V ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 150 – TC ---------------------125 I = I25 TC = 25oC 100 SINGLE PULSE 30 -5 10 -4 10 -3 -2 -1 10 10 10 t, PULSE WIDTH (s) 0 10 1 10 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDD4243 40V P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJC 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC 0.01 SINGLE PULSE 0.003 -5 10 -4 10 -3 -2 10 10 -1 10 0 10 1 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDD4243 Rev.C1 5 www.fairchildsemi.com FDD4243 40V P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition tm Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 FDD4243 Rev.C1 6 www.fairchildsemi.com FDD4243 40V P-Channel PowerTrench® MOSFET TRADEMARKS