VISHAY HFA80FA120P

HFA80FA120P
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 80 A
FEATURES
• Fast recovery time characteristic
1
4
• Electrically isolated base plate
RoHS
• Large creepage distance between terminal
COMPLIANT
• Simplified mechanical designs, rapid assembly
2
SOT-227
• UL pending
3
• Totally lead (Pb)-free
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
The dual diode series configuration (HFA80FA120P) is used
for output rectification or freewheeling/clamping operation
and high voltage application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
These modules are intended for general applications such as
HV power supplies, electronic welders, motor control and
inverters.
PRODUCT SUMMARY
VR
1200 V
VF (typical)
2.6 V
trr (typical)
25 ns
IF(DC) at TC
40 A at 78 °C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
1200
V
Cathode to anode voltage
VR
Continuous forward current
IF
TC = 78 °C
40
Single pulse forward current
IFSM
TJ = 25 °C
400
Maximum repetitive forward current
IFRM
Rated VR, square wave, 20 kHz, TC = 60 °C
72
TC = 25 °C
178
TC = 100 °C
71
Maximum power dissipation
PD
RMS isolation voltage
Any terminal to case, t = 1 min
VISOL
Operating junction and storage
temperature range
TJ, TStg
A
W
2500
V
- 55 to + 150
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Cathode to anode
breakdown voltage
SYMBOL
VBR
TEST CONDITIONS
IR = 100 µA
IF = 25 A
Forward voltage
VFM
IF = 40 A
See fig. 1
IF = 80 A, TJ = 125 °C
Reverse leakage current
IRM
Junction capacitance
CT
Document Number: 94075
Revision: 28-Aug-08
VR = VR rated
TJ = 125 °C, VR = 0.8 x VR rated
VR = 200 V
See fig. 2
See fig. 3
For technical questions, contact: [email protected]
MIN.
TYP.
MAX.
UNITS
1200
-
-
-
2.6
3.0
-
2.9
3.3
-
3.4
-
-
2.0
-
µA
-
0.5
2
mA
-
43
-
pF
V
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HFA80FA120P
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery
Diode, 80 A
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
TEST CONDITIONS
MIN.
TYP.
MAX.
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V
-
25
-
TJ = 25 °C
-
52
-
-
110
-
-
5.9
-
-
10.8
-
TJ = 25 °C
-
160
-
TJ = 125 °C
-
630
-
MIN.
TYP.
MAX.
TJ = 125 °C
Peak recovery current
Reverse recovery charge
IRRM
Qrr
IF = 40 A
TJ = 25 °C
dIF/dt = - 200 A/µs
TJ = 125 °C
VR = 200 V
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case, single leg conducting
Junction to case, both legs conducting
Case to heatsink
SYMBOL
TEST CONDITIONS
RthJC
RthCS
-
0.7
-
0.35
°C/W
-
0.05
-
Weight
-
30
-
g
Mounting torque
-
1.3
-
Nm
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Flat, greased and surface
-
UNITS
For technical questions, contact: [email protected]
Document Number: 94075
Revision: 28-Aug-08
HFA80FA120P
HEXFRED®
Ultrafast Soft Recovery
Diode, 80 A
10
IR - Reverse Current (µA)
100
IF - Instantaneous
Forward Current (A)
Vishay High Power Products
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
1.0
TJ = 150 °C
1
TJ = 125 °C
0.1
0.01
TJ = 25 °C
0.001
0.0001
1.5
2.0
2.5
3.0
3.5
4.0
0
200
400
600
800
1000
1200
VF - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
10
1
10
100
1000
10 000
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
0.1
PDM
0.01
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
Single pulse
(thermal resistance)
0.0001
0.00001
0.0001
0.001
0.01
t1
t2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
0.1
1
.
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 94075
Revision: 28-Aug-08
For technical questions, contact: [email protected]
www.vishay.com
3
HFA80FA120P
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery
Diode, 80 A
140
140
120
100
100
DC
80
Square wave
(D = 0.50)
60
80
IF = 40 A, TJ = 25 °C
IF = 20 A, TJ = 25 °C
60
40
40
20
See note (1)
20
100
0
0
10
20
30
40
50
60
70
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/µs)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
200
1800
180
RMS limit
1600
160
1400
140
120
100
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
80
60
40
20
10
20
30
40
50
1000
800
600
IF = 40 A, TJ = 25 °C
IF = 20 A, TJ = 25 °C
400
200
0
0
IF = 40 A, TJ = 125 °C
IF = 20 A, TJ = 125 °C
1200
DC
Qrr (nC)
Average Power Loss (W)
IF = 40 A, TJ = 125 °C
IF = 20 A, TJ = 125 °C
120
trr (ns)
Allowable Case Temperature (°C)
160
60
0
100
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
1000
dIF/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
(1)
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For technical questions, contact: [email protected]
Document Number: 94075
Revision: 28-Aug-08
HFA80FA120P
HEXFRED®
Ultrafast Soft Recovery
Diode, 80 A
Vishay High Power Products
VR = 200 V
0.01 Ω
L = 70 µH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94075
Revision: 28-Aug-08
For technical questions, contact: [email protected]
www.vishay.com
5
HFA80FA120P
HEXFRED®
Ultrafast Soft Recovery
Diode, 80 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
HF
A
80
FA
120
P
1
2
3
4
5
6
1
-
HEXFRED® family
2
-
Process designator (A = Electron irradiated)
3
-
Average current (80 = 80 A)
4
-
Package outline (FA = SOT-227)
5
-
Voltage rating (120 = 1200 V)
6
-
P = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95036
Packaging information
http://www.vishay.com/doc?95037
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6
For technical questions, contact: [email protected]
Document Number: 94075
Revision: 28-Aug-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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