CYPRESS CY7C1020CV33

CY7C1020CV33
512 K (32 K × 16) Static RAM
512 K (32 K × 16) Static RAM
Features
Functional Description
■
Pin- and function-compatible with CY7C1020CV33
■
Temperature Ranges
❐ Commercial: 0 °C to 70 °C
❐ Industrial: –40 °C to 85 °C
❐ Automotive: –40 °C to 125 °C
The CY7C1020CV33 is a high-performance CMOS static RAM
organized as 32,768 words by 16 bits. This device has an
automatic power-down feature that significantly reduces power
consumption when deselected.
Writing to the device is accomplished by taking Chip Enable (CE)
and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is
LOW, then data from I/O pins (I/O1 through I/O8), is written into
the location specified on the address pins (A0 through A14). If
Byte High Enable (BHE) is LOW, then data from I/O pins (I/O9
through I/O16) is written into the location specified on the address
pins (A0 through A14).
■
High speed
❐ tAA = 10 ns
■
CMOS for optimum speed/power
■
Low active power
❐ 325 mW (max)
■
Automatic power-down when deselected
■
Independent control of upper and lower bits
■
Available in Pb-free and non Pb-free 44-pin TSOP II package
Reading from the device is accomplished by taking Chip Enable
(CE) and Output Enable (OE) LOW while forcing the Write
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data
from the memory location specified by the address pins will
appear on I/O1 to I/O8. If Byte High Enable (BHE) is LOW, then
data from memory will appear on I/O9 to I/O16. See the truth table
at the back of this data sheet for a complete description of read
and write modes.
The input/output pins (I/O1 through I/O16) are placed in a
high-impedance state when the device is deselected (CE HIGH),
the outputs are disabled (OE HIGH), the BHE and BLE are
disabled (BHE, BLE HIGH), or during a write operation (CE LOW,
and WE LOW).
The CY7C1020CV33 is available in standard 44-pin TSOP Type
II package.
Logic Block Diagram
32K × 16
RAM Array
SENSE AMPS
A7
A6
A5
A4
A3
A2
A1
A0
ROW DECODER
DATA IN DRIVERS
I/O1–I/O8
I/O9–I/O16
COLUMN DECODER
A8
A9
A10
A11
A12
A13
A14
BHE
WE
CE
OE
BLE
Cypress Semiconductor Corporation
Document Number: 38-05133 Rev. *H
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised December 2, 2010
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CY7C1020CV33
Contents
Selection Guide ................................................................ 3
Pin Configuration ............................................................. 3
Pin Definitions .................................................................. 4
Maximum Ratings ............................................................. 5
Operating Range ............................................................... 5
Electrical Characteristics ................................................. 5
Capacitance ...................................................................... 5
Thermal Resistance .......................................................... 5
AC Test Loads and Waveforms ....................................... 6
Switching Characteristics ................................................ 6
Switching Waveforms ...................................................... 7
Read Cycle No. 1 ........................................................ 7
Read Cycle No. 2 (OE Controlled) .............................. 7
Write Cycle No. 1 (CE Controlled) ............................... 8
Document Number: 38-05133 Rev. *H
Write Cycle No. 2 (BLE or BHE Controlled) ................ 8
Write Cycle No. 3 (WE Controlled, OE LOW) ............. 9
Truth Table ........................................................................ 9
Ordering Information ...................................................... 10
Ordering Code Definitions ......................................... 10
Package Diagrams .......................................................... 10
Acronyms ........................................................................ 11
Document Conventions ................................................. 11
Units of Measure ....................................................... 11
Document History Page ................................................. 12
Sales, Solutions, and Legal Information ...................... 13
Worldwide Sales and Design Support ....................... 13
Products .................................................................... 13
PSoC Solutions ......................................................... 13
Page 2 of 13
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CY7C1020CV33
Selection Guide
–10
–12
–15
Unit
10
12
15
ns
Commercial/Industrial
90
85
80
mA
Automotive
–
–
85
mA
Commercial/Industrial
5
5
5
mA
Automotive
–
–
10
mA
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
Pin Configuration [1]
TSOP II
Top View
NC
A3
A2
A1
A0
CE
I/O1
I/O2
I/O3
I/O4
VCC
VSS
I/O5
I/O6
I/O7
I/O8
WE
A4
A14
A13
A12
NC
1
44
2
3
43
42
4
41
40
39
38
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
BHE
BLE
I/O16
I/O15
I/O14
I/O13
VSS
VCC
I/O12
I/O11
I/O10
I/O9
NC
A8
A9
A10
A11
NC
Note
1. NC pins are not connected on the die.
Document Number: 38-05133 Rev. *H
Page 3 of 13
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CY7C1020CV33
Pin Definitions
Pin Name
TSOP - Pin Number
I/O Type
Description
A0–A14
5, 4, 3, 2, 18, 44, 43, 42, 27, Input
26, 25, 24, 21, 20, 19
Address Inputs used to select one of the address locations.
I/O1–I/O16
7-10, 13-16, 29-32, 35-38
Input/Output
Bidirectional Data I/O lines. Used as input or output lines
depending on operation.
No Connects. Not connected to the die.
NC
1, 22, 23, 28
No Connect
WE
17
Input/Control Write Enable Input, active LOW. When selected LOW, a Write is
conducted. When deselected HIGH, a Read is conducted.
CE
6
Input/Control Chip Enable Input, active LOW. When LOW, selects the chip.
When HIGH, deselects the chip.
BHE, BLE
40, 39
Input/Control Byte Write Select Inputs, active LOW. BHE controls I/O16–I/O9,
BLE controls I/O8–I/O1.
OE
41
Input/Control Output Enable, active LOW. Controls the direction of the I/O pins.
When LOW, the I/O pins are allowed to behave as outputs. When
deasserted HIGH, I/O pins are tri-stated, and act as input data pins.
VSS
12, 34
Ground
VCC
11, 33
Power Supply Power Supply inputs to the device.
Document Number: 38-05133 Rev. *H
Ground for the device. Should be connected to ground of the
system.
Page 4 of 13
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CY7C1020CV33
Maximum Ratings
Current into outputs (LOW) ......................................... 20 mA
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature ................................ –65 C to +150 C
Range
Supply voltage on VCC to relative GND[2] .....–0.5 V to +4.6 V
Ambient Temperature
VCC
0 C to +70 C
3.3 V  10%
Commercial
DC voltage applied to outputs
in high Z State[2] .................................. –0.5 V to VCC + 0.5 V
DC input
Latch-up current ..................................................... > 200 mA
Operating Range
Ambient temperature with
power applied ........................................... –55 C to +125 C
voltage[2]
Static discharge voltage........................................... > 2001 V
(per MIL-STD-883, method 3015)
............................... –0.5 V to VCC + 0.5 V
Industrial
–40 C to +85 C
3.3 V  10%
Automotive
–40 C to +125 C
3.3 V  10%
Electrical Characteristics
Over the Operating Range
Parameter
Description
–10
Test Conditions
VOH
Output HIGH voltage
VCC = Min, IOH = –4.0 mA
VOL
Output LOW voltage
VCC = Min, IOL = 8.0 mA
Min
–12
Max
Min
2.4
–
–
0.4
–15
Max
Unit
Max
Min
2.4
–
2.4
–
V
–
0.4
–
0.4
V
VIH
Input HIGH voltage
2.0 VCC + 0.3 2.0 VCC + 0.3 2.0 VCC + 0.3
V
VIL
Input LOW voltage[2]
0.3
0.8
–0.3
0.8
–0.3
0.8
V
IIX
Input leakage current
GND < VI < VCC
1
+1
–1
+1
–1
+1
A
IOZ
Output leakage current
GND < VI < VCC,
Output Disabled
Commercial/
Industrial
Automotive
–
–
–
–
–20
+20
A
Commercial/
Industrial
1
+1
–1
+1
–1
+1
A
Automotive
–
–
–
–
–20
+20
A
Commercial/
Industrial
–
90
–
85
–
80
mA
ICC
VCC operating supply
current
VCC = Max,
IOUT = 0 mA,
f = fMAX = 1/tRC
–
–
–
–
–
85
mA
ISB1
Automatic CE
power-down current
—TTL Inputs
Max VCC, CE > VIH Commercial/
VIN > VIH or VIN < VIL, Industrial
f = fMAX
Automotive
–
15
–
15
–
15
mA
–
–
–
–
–
20
mA
Automatic CE
power-down current
—CMOS inputs
Max VCC,
CE > VCC – 0.3 V,
VIN > VCC – 0.3 V,
or VIN < 0.3 V, f = 0
Commercial/
Industrial
–
5
–
5
–
5
mA
Automotive
–
–
–
–
–
10
mA
ISB2
Automotive
Capacitance[3]
Parameter
Description
CIN
Input capacitance
COUT
Output capacitance
Test Conditions
TA = 25 C, f = 1 MHz, VCC = 3.3 V
Max
Unit
8
pF
8
pF
Thermal Resistance[3]
Parameter
JA
JC
Description
Thermal resistance (Junction to Ambient)
Thermal resistance (Junction to Case)
Test Conditions
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA/JESD51.
44-pin TSOP-II Unit
76.92
C/W
15.86
C/W
Notes
2. VIL (min) = –2.0 V and VIH(max) = VCC + 0.5 V for pulse durations of less than 20 ns.
3. Tested initially and after any design or process changes that may affect these parameters.
Document Number: 38-05133 Rev. *H
Page 5 of 13
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CY7C1020CV33
AC Test Loads and Waveforms[4]
R 317
3.3 V
OUTPUT
R2
351
30 pF
High Z characteristics:
R 317 
3.3 V
ALL INPUT PULSES
3.0 V
GND
90%
90%
10%
10%
OUTPUT
R2
351
5 pF
(a)
(b)
Rise Time: 1 V/ns
Fall Time: 1 V/ns
(c)
Switching Characteristics
Over the Operating Range[4]
Parameter
Description
–10
–12
–15
Min
Max
Min
Max
Min
Max
Unit
Read Cycle
tRC
Read cycle time
10
–
12
–
15
–
ns
tAA
Address to data valid
–
10
–
12
–
15
ns
tOHA
Data hold from address change
3
–
3
–
3
–
ns
tACE
CE LOW to data valid
–
10
–
12
–
15
ns
tDOE
OE LOW to data valid
–
5
–
6
–
7
ns
0
–
0
–
0
–
ns
–
5
–
6
–
7
ns
3
–
3
–
3
–
ns
–
5
–
6
–
7
ns
tLZOE
OE LOW to low
Z[5]
Z[5, 6]
tHZOE
OE HIGH to high
tLZCE
CE LOW to low Z[5]
Z[5, 6]
tHZCE
CE HIGH to high
tPU[7]
tPD[7]
CE LOW to power-up
0
–
0
–
0
–
ns
CE HIGH to power-down
–
10
–
12
–
15
ns
tDBE
Byte enable to data valid
–
5
–
6
–
7
ns
tLZBE
Byte enable to low Z
0
–
0
–
0
–
ns
tHZBE
Byte disable to high Z
–
5
–
6
–
7
ns
tWC
Write cycle time
10
–
12
–
15
–
ns
tSCE
CE LOW to write end
8
–
9
–
10
–
ns
tAW
Address set-up to write end
7
–
8
–
10
–
ns
tHA
Address hold from write end
0
–
0
–
0
–
ns
tSA
Address set-up to write start
0
–
0
–
0
–
ns
tPWE
WE pulse width
7
–
8
–
10
–
ns
tSD
Data set-up to write end
5
–
6
–
8
–
ns
tHD
Data hold from write end
0
–
0
–
0
–
ns
tLZWE
WE HIGH to low Z[5]
3
–
3
–
3
–
ns
–
5
–
6
–
7
ns
7
–
8
–
9
–
ns
Write Cycle[8]
Z[5, 6]
tHZWE
WE LOW to high
tBW
Byte enable to end of write
Notes
4. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5 V, input pulse levels of 0 to 3.0 V.
5. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
6. tHZOE, tHZBE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (c) of AC Test Loads. Transition is measured 500 mV from steady-state voltage.
7. This parameter is guaranteed by design and is not tested.
8. The internal Write time of the memory is defined by the overlap of CE LOW, WE LOW and BHE/BLE LOW. CE, WE and BHE/BLE must be LOW to initiate a Write, and
the transition of these signals can terminate the Write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the Write.
Document Number: 38-05133 Rev. *H
Page 6 of 13
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CY7C1020CV33
Switching Waveforms
Read Cycle No. 1[9, 10]
tRC
ADDRESS
tOHA
DATA OUT
tAA
PREVIOUS DATA VALID
DATA VALID
Read Cycle No. 2 (OE Controlled)[10, 11]
ADDRESS
tRC
CE
tACE
OE
tHZOE
tDOE
BHE, BLE
tLZOE
tHZCE
tDBE
tLZBE
DATA OUT
HIGH IMPEDANCE
tLZCE
VCC
SUPPLY
CURRENT
tHZBE
DATA VALID
HIGH
IMPEDANCE
tPD
tPU
50%
50%
IICC
CC
IISB
SB
Notes
9. Device is continuously selected. OE, CE, BHE and/or BHE = VIL.
10. WE is HIGH for Read cycle.
11. Address valid prior to or coincident with CE transition LOW.
Document Number: 38-05133 Rev. *H
Page 7 of 13
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CY7C1020CV33
Switching Waveforms
(continued)
Write Cycle No. 1 (CE Controlled)[12, 13]
tWC
ADDRESS
CE
tSA
tSCE
tAW
tHA
tPWE
WE
tBW
BHE, BLE
tSD
tHD
DATA I/O
Write Cycle No. 2 (BLE or BHE Controlled)
tWC
ADDRESS
BHE, BLE
tSA
tBW
tAW
tHA
tPWE
WE
tSCE
CE
tSD
tHD
DATA I/O
Notes
12. Data I/O is high impedance if OE or BHE and/or BLE = VIH.
13. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
Document Number: 38-05133 Rev. *H
Page 8 of 13
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CY7C1020CV33
Switching Waveforms
(continued)
Write Cycle No. 3 (WE Controlled, OE LOW)
tWC
ADDRESS
tSCE
CE
tAW
tHA
tSA
tPWE
WE
tBW
BHE, BLE
tHZWE
tSD
tHD
DATA I/O
tLZWE
Truth Table
CE
OE
WE
BLE
BHE
H
X
X
X
X
High Z
L
L
H
L
L
Data out
Data out
Read—All bits
Active (ICC)
L
H
Data out
High Z
Read—Lower bits only
Active (ICC)
H
L
High Z
Data out
Read—Upper bits only
Active (ICC)
L
L
Data in
Data in
Write—All bits
Active (ICC)
L
X
L
I/O1–I/O8
I/O9–I/O16
High Z
Mode
Power-down
Power
Standby (ISB)
L
H
Data in
High Z
Write—Lower bits only
Active (ICC)
H
L
High Z
Data in
Write—Upper bits only
Active (ICC)
L
H
H
X
X
High Z
High Z
Selected, outputs disabled
Active (ICC)
L
X
X
H
H
High Z
High Z
Selected, outputs disabled
Active (ICC)
Document Number: 38-05133 Rev. *H
Page 9 of 13
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CY7C1020CV33
Ordering Information
Speed
(ns)
15
Ordering Code
Package Diagram
Package Type
Operating Range
CY7C1020CV33-15ZSXE
51-85087
44-pin TSOP Type II (Pb-free)
Automotive
CY7C1020CV33-15ZSXET
51-85087
44-pin TSOP Type II (Pb-free)
Automotive
Ordering Code Definitions
CY7C 1020 C V33 - 15
ZSX E X
X = T or Blank
T = Tape and Reel; Blank = Tube
Temperature Range:
E = Automotive
Package Type:
ZSX = 44-pin TSOP Type II (Pb-free)
Speed Grade = 15 ns
V33 = 3.3 V
Process Technology  0.16 µm
1020 = Part Identifier
CY7C = Cypress SRAMs
Package Diagrams
Figure 1. 44-pin TSOP II, 51-85087
51-85087 *C
Document Number: 38-05133 Rev. *H
Page 10 of 13
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CY7C1020CV33
Acronyms
Document Conventions
Acronym
Description
CMOS
complementary metal oxide semiconductor
CE
chip enable
I/O
input/output
OE
output enable
SRAM
static random access memory
TSOP
thin small-outline package
TTL
transistor-transistor logic
WE
write enable
Document Number: 38-05133 Rev. *H
Units of Measure
Symbol
Unit of Measure
ns
nano seconds
V
Volts
µA
micro Amperes
mA
milli Amperes
mW
milli Watts
MHz
Mega Hertz
pF
pico Farad
°C
degree Celcius
W
Watts
%
percent
Page 11 of 13
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CY7C1020CV33
Document History Page
Document Title: CY7C1020CV33 512 K (32 K × 16) Static RAM
Document Number: 38-05133
REV.
ECN NO.
Issue Date
Orig. of
Change
**
109428
12/16/01
HGK
New Data Sheet
*A
115045
05/30/02
HGK
ICC and ISB1 data modified
Description of Change
*B
117615
08/14/02
DFP
Pin 1= NC Pin 18 = A4; remove SOJ package option; remove 8ns option.
*C
262949
See ECN
RKF
Added Automotive Specs to Data sheet
*D
334398
See ECN
SYT
Added Lead-Free Product Information
*E
493543
See ECN
NXR
Added note #1 on page #1
Changed the description of IIX from Input Load Current to
Input Leakage Current in DC Electrical Characteristics table
Removed IOS parameter from DC Electrical Characteristics table
Updated Ordering Information Table
*F
2897691
03/23/2010
RAME
Updated Ordering Information
Updated Package Diagram
*G
3057593
10/13/2010
PRAS
Updated Ordering Information and added Ordering Code Definitions.
*H
3100106
12/02/2010
PRAS
Added Acronyms and Units of Measure.
Minor edits and updated in new template.
Document Number: 38-05133 Rev. *H
Page 12 of 13
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CY7C1020CV33
Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office
closest to you, visit us at Cypress Locations.
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© Cypress Semiconductor Corporation, 2001-2010. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of
any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for
medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems
application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without
the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document Number: 38-05133 Rev. *H
Revised December 2, 2010
Page 13 of 13
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