Diodes SMD Type Silicon Epitaxial Trench Pin Diode HVC136 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features + +0.1 0.6-0.1 - Adopting the trench structure improves low capacitance.(C = 0.45 pF max) Low forward resistance. (rf=2.5 max) +0.1 1.6-0.1 0.77max +0.05 0.1-0.02 0.07max Low operation current. A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r P e a k re v e rs e v o lta g e S ym bol V a lu e U n it V RM 65 V R e v e rs e v o lta g e VR 60 V F o rw a rd c u rre n t IF 100 mA P o w e r d is s ip a tio n Pd 150 mW J u n c tio n te m p e ra tu re Tj 125 S to ra g e te m p e ra tu re T s tg -5 5 to + 1 2 5 Electrical Characteristics Ta = 25 Param eter Sym bol Conditions Reverse current IR V R = 60 V 0.1 Reverse voltage VF IF = 2 m A 0.9 V Capacitance C V R = 1 V, f = 1 MHz 0.45 pF Forward resistance rf I F = 2 m A, f = 100 MHz 2.5 C =200pF, Both forward and reverse direction 1 pulse ESD-Capability *1 Min 100 Typ Max Unit A V Note 1. Failure criterion ; I R > 100 nA at V R = 60V. Marking Marking P6 www.kexin.com.cn 1