IRF IRHLQ77214

PD-97260
2N7615U6
IRHLQ77214
250V, Quad N-CHANNEL
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (LCC-28)
™
TECHNOLOGY
Product Summary
Part Number
IRHLQ77214
IRHLQ73214
Radiation Level RDS(on)
100K Rads (Si)
1.0Ω
300K Rads (Si)
1.0Ω
ID
2.6A
2.6A
LCC-28
International Rectifier’s R7 TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable operating
limits over the full operating temperature and post
radiation. This is achieved while maintaining single
event gate rupture and single event burnout immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Features:
n
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
Absolute Maximum Ratings (Per Die)
Pre-Irradiation
Parameter
ID @ VGS = 4.5V, TC = 25°C
ID @ VGS = 4.5V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
2.6
1.6
10.4
12
0.1
±10
38.5
2.6
1.2
5.56
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (for 5s)
0.89 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
03/13/08
IRHLQ77214, 2N7615U6
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Per Die) (Unless Otherwise Specified)
BVDSS
Parameter
Min
Drain-to-Source Breakdown Voltage
250
—
—
V
—
0.25
—
V/°C
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1.0mA
—
—
1.0
Ω
VGS = 4.5V, ID = 1.6A
1.0
—
3.0
2.0
—
—
1.0
10
V
mV/°C
S
—
—
-5.3
—
—
—
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
∆V GS(th) /∆T J Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
100
-100
18
3.0
12
12
40
63
13
—
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
605
62
0.7
—
—
—
Rg
Gate Resistance
—
6.7
µA
nA
nC
ns
nH
pF
—
Ω
Test Conditions
Ã
VDS = VGS, ID = 250µA
VDS = 10V, IDS = 1.6A Ã
VDS= 200V ,VGS= 0V
VDS = 200V,
VGS = 0V, TJ =125°C
VGS = 10V
VGS = -10V
VGS = 4.5V, ID = 2.6A
VDS = 125V
VDD = 125V, ID = 2.6A,
VGS = 5.0V, RG = 7.5Ω
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
2.6
10.4
1.2
371
858
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = 2.6A, VGS = 0V Ã
Tj = 25°C, IF = 2.6A, di/dt ≤ 100A/µs
VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJ-PCB
RthJA
Junction-to-PCB
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
10.4
90
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available International Rectifier Website.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
Pre-Irradiation
IRHLQ77214, 2N7615U6
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ (Per Die)
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Units
Up to 300K Rads (Si)1
Test Conditions
Min
Max
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-3)
Static Drain-to-Source On-state „
Resistance (LCC-28)
250
1.0
—
—
—
—
2.0
100
-100
10
nA
µA
VGS = 0V, ID = 250µA
VGS = VDS, ID = 250µA
VGS = 10V
VGS = -10V
VDS= 200V, VGS=0V
—
0.85
Ω
VGS = 4.5V, ID = 1.6A
—
1.0
Ω
VGS = 4.5V, ID = 1.6A
Diode Forward Voltage„
—
1.2
V
VGS = 0V, ID = 2.6A
V
1. Part numbers IRHLQ77214, IRHLQ73214
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
Ion
LET
2
(MeV/(mg/cm ))
Energy
Range
(MeV)
(µm)
VDS (V)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
0V
-1V
-2V
-3V
-4V
-5V
-6V
-7V
36.1
463
56
250
250
250
250
250
250
250
250
57.8
924
73.2
250
250
250
-
-
-
-
-
Au
88.2
1755
93.7
250
250
-
-
-
-
-
-
VDS
Kr
Xe
300
250
200
150
100
50
0
Kr
Xe
Au
0
-1
-2
-3
-4
-5
-6
-7
VGS
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHLQ77214, 2N7615U6
Pre-Irradiation
100
VGS
TOP
10V
5.0V
4.5V
3.25V
2.75V
2.5V
2.25V
BOTTOM 2.0V
10
1
2.0V
60µs PULSE WIDTH
T j = 25°C
0.1
1
10
2.0V
1
60µs PULSE WIDTH
Tj = 150°C
100
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
0.1
0.1
10
T J = 150°C
1
T J = 25°C
0.1
VDS = 50V
60µs PULSE
15 WIDTH
0.01
ID = 2.6A
2.0
1.5
1.0
0.5
VGS = 4.5V
0.0
1
1.5
2
2.5
3
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
VGS
10V
5.0V
4.5V
3.25V
2.75V
2.5V
2.25V
BOTTOM 2.0V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
3.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
4.5
RDS(on), Drain-to -Source On Resistance ( Ω)
5
ID = 2.6A
4
3.5
3
2.5
T J = 150°C
2
1.5
1
0.5
T J = 25°C
0
2
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
IRHLQ77214, 2N7615U6
4
6
8
10
3
2.5
T J = 150°C
2
1.5
T J = 25°C
1
Vgs = 4.5V
0.5
12
0
1
2
3
4
5
6
VGS, Gate -to -Source Voltage (V)
ID, Drain Current (A)
Fig 5. Typical On-Resistance Vs
Gate Voltage
Fig 6. Typical On-Resistance Vs
Drain Current
320
7
2.5
ID = 1.0mA
VGS(th) Gate threshold Voltage (V)
RDS(on), Drain-to -Source On Resistance (Ω)
Pre-Irradiation
300
280
260
2.0
1.5
1.0
0.5
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 150mA
0.0
240
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
www.irf.com
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs
Temperature
5
IRHLQ77214, 2N7615U6
1200
Pre-Irradiation
12
VGS = 0V,
f = 1 MHz
C iss = C gs + Cgd, C ds SHORTED
VGS, Gate-to-Source Voltage (V)
1000
C, Capacitance (pF)
C oss = Cds + Cgd
800
Ciss
600
Coss
400
Crss
200
VDS = 200V
VDS = 125V
VDS = 50V
ID = 2.6A
C rss = C gd
0
10
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 17
0
1
10
100
0
VDS, Drain-to-Source Voltage (V)
2
4
6
8
10 12 14 16 18 20
QG, Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
3
100
ID, Drain Current (A)
ISD, Reverse Drain Current (A)
2.5
10
T J = 150°C
T J = 25°C
1
2
1.5
1
0.5
VGS = 0V
0.1
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VSD , Source-to-Drain Voltage (V)
Fig 11. Typical Source-to-Drain Diode
Forward Voltage
6
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig 12. Maximum Drain Current Vs.
Case Temperature
www.irf.com
Pre-Irradiation
IRHLQ77214, 2N7615U6
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µs
1
1ms
0.1
0.01
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
EAS , Single Pulse Avalanche Energy (mJ)
ID, Drain-to-Source Current (A)
100
TOP
80
BOTTOM
ID
1.2A
1.6A
2.6A
60
40
20
0
10
100
25
1000
50
75
100
125
150
Starting T J , Junction Temperature (°C)
VDS , Drain-to-Source Voltage (V)
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response ( Z thJ-PCB )
100
10
D = 0.50
0.20
0.10
1
P DM
0.05
0.02
0.01
t1
SINGLE PULSE
( THERMAL RESPONSE )
t2
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-005
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-PCB
www.irf.com
7
IRHLQ77214, 2N7615U6
Pre-Irradiation
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T.
RG
+
V
- DD
IAS
VGS
20V
A
I AS
0.01Ω
tp
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
4.5V
50KΩ
.2µF
12V
QGS
.3µF
QGD
D.U.T.
VG
+
V
- DS
VGS
3mA
IG
Charge
Fig 17a. Basic Gate Charge Waveform
VDS
Fig 17b. Gate Charge Test Circuit
RD
VDS
90%
V GS
D.U.T.
RG
ID
Current Sampling Resistors
VDD
+
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
8
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
www.irf.com
Pre-Irradiation
IRHLQ77214, 2N7615U6
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 50V, starting TJ = 25°C, L= 11.4mH
Peak IL = 2.6A, VGS = 10V
 ISD ≤ 2.6A, di/dt ≤ 399A/µs,
VDD ≤ 250V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
10 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
200 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — LCC-28
Q2
Q1
Q3
Q4
Q3
Q4
Q2
Q1
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 03/2008
www.irf.com
9