IPD640N06L G OptiMOS® Power-Transistor Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level V DS 60 V R DS(on),max 64 mΩ ID 18 A • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Type IPD640N06L G Type Package PG-TO252-3 IPD640N06L G Marking 640N06L PG-TO252-3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 18 T C=100 °C 12 Unit A Pulsed drain current I D,pulse T C=25 °C1) 72 Avalanche energy, single pulse E AS I D=18 A, R GS=25 Ω 43 mJ Reverse diode dv /dt dv /dt I D=18 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C 6 kV/µs Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg T C=25 °C IEC climatic category; DIN IEC 68-1 1) Rev. 1.4 ±20 V 47 W -55 ... 175 °C 55/175/56 See figure 3 page 1 2008-09-01 IPD640N06L G Parameter Values Symbol Conditions Unit min. typ. max. - - 3.2 minimal footprint - - 75 6 cm2 cooling area2) - - 50 60 - - Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=16 µA 1.2 1.6 2 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.01 1 V DS=60 V, V GS=0 V, T j=125 °C - 1 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=18 A - 47 64 mΩ V GS=4.5 V, I D=12 A - 64 85 - 1.2 - Ω 9.5 19 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=18 A 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.4 page 2 2008-09-01 IPD640N06L G Parameter Values Symbol Conditions Unit min. typ. max. - 350 470 - 94 130 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 35 53 Turn-on delay time t d(on) - 6 8 Rise time tr - 25 38 Turn-off delay time t d(off) - 32 48 Fall time tf - 32 48 Gate to source charge Q gs - 1.4 1.9 Gate charge at threshold Q g(th) - 0.5 0.7 Gate to drain charge Q gd - 3.6 5.4 Switching charge Q sw - 4.5 6.5 Gate charge total Qg - 10 13 Gate plateau voltage V plateau - 4.2 - Output charge Q oss - 3 4 - - 18 - - 72 - 0.99 1.3 V - 30 45 ns - 20 30 nC V GS=0 V, V DS=30 V, f =1 MHz V DD=30 V, V GS=10 V, I D=15 A, R G=22 Ω pF ns Gate Charge Characteristics 3) V DD=30 V, I D=18 A, V GS=0 to 10 V V DD=30 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr T C=25 °C V GS=0 V, I F=18 A, T j=25 °C A V R=30 V, I F=I S, di F/dt =100 A/µs Reverse recovery charge 3) Rev. 1.4 Q rr See figure 16 for gate charge parameter definition page 3 2008-09-01 IPD640N06L G 1 Power dissipation 2 Drain current P tot=f(T C); V GS≥6 V I D=f(T C); V GS≥10 V 50 20 40 15 I D [A] P tot [W] 30 10 20 5 10 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 102 101 1 µs 10 µs limited by on-state resistance 100 µs 0.5 100 1 ms I D [A] DC Z thJC [K/W] 101 10 ms 0.2 0.1 0.05 0.02 100 10-1 0.01 single pulse 10-1 10 10-2 -1 10 0 10 1 10 2 V DS [V] Rev. 1.4 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2008-09-01 IPD640N06L G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 120 30 4V 3.5 V 5V 10 V 5.5 V 100 4.5 V 4.5 V 80 R DS(on) [mΩ] I D [A] 20 4V 5V 60 5.5 V 10 V 40 10 3.5 V 20 3V 0 0 0 1 2 0 3 10 V DS [V] 20 30 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 30 25 25 20 25 °C 20 g fs [S] I D [A] 15 175 °C 15 10 10 5 5 0 0 0 1 2 3 4 5 Rev. 1.4 0 5 10 15 20 I D [A] V GS [V] page 5 2008-09-01 IPD640N06L G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=18 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 160 2.5 140 2 120 80 V GS(th) [V] R DS(on) [mΩ] 160 µA 100 98 % 60 1.5 16 µA 1 typ 40 0.5 20 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 102 1000 25 °C 98% 175 °C 98% 25 °C Ciss 175 °C I F [A] C [pF] 10 Coss 100 1 100 Crss 10-1 10 0 5 10 15 20 25 30 Rev. 1.4 0 1 2 3 V SD [V] V DS [V] page 6 2008-09-01 IPD640N06L G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=18 A pulsed parameter: T j(start) parameter: V DD 100 12 30 V 10 12V 48 V 8 10 V GS [V] I AV [A] 25 °C 100 °C 6 4 150 °C 2 1 0 1 10 100 1000 0 2 4 6 8 10 12 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 75 V GS Qg V BR(DSS) [V] 70 65 V g s(th) 60 55 Q g(th) Q sw Q gs 50 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 1.4 page 7 2008-09-01 IPD640N06L G PG-TO252-3: Outline Rev. 1.4 page 8 2008-09-01 IPD640N06L G Rev. 1.4 page 9 2008-09-01