2N7002MTF Advanced Small Signal MOSFET FEATURES BVDSS = 60 V ! Lower RDS(on) RDS(on) = 5.0 Ω ! Improved Inductive Ruggedness ! Fast Switching Times ID = 200 mA ! Lower Input Capacitance ! Extended Safe Operating Area SOT-23 ! Improved High Temperature Reliability Product Summary 1.Gate 2. Source 3. Drain Part Number BVDSS RDS(on) 2N7002 60V 5.0Ω ID 115mA Absolute Maximum Ratings Symbol VDSS ID Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) 115 Continuous Drain Current (TC=100℃) 73 V mA mA ±20 V Total Power Dissipation (TC=25℃) 0.2 W Linear Derating Factor 0.16 W/℃ - 55 to +150 ℃ Drain Current-Pulsed Gate-to-Source Voltage TJ , TSTG Units 800 IDM VGS PD Value 60 ① Operating Junction and Storage Temperature Range Thermal Resistance Symbol Characteristic Typ. Max. Units RθJA Junction-to-Ambient -- 62.5 ℃/W Rev. A1 N-CHANNEL Small Signal MOSFET 2N7002MTF Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol Characteristic Min. Typ. Max. Units Test Condition BVDSS Drain-Source Breakdown Voltage 60 - - V VGS = 0V, ID = 250µA VGS(th) Gate Threshold Voltage 1.0 - 2.5 V VDS = VGS, ID = 250µA - - 100 Gate-Source Leakage, Forward IGSS Gate-Source Leakage, Reverse IDSS Drain-to-Source Leakage Current ID(ON) On-State Drain-Source Current Static Drain-Source RDS(on) On-State Resistance ② nA - -100 - - 1.0 - - 500 0.5 - - A VDS = 10V, VGS = 10V - - 5.0 Ω VGS = 10V, ID = 0.5A 0.08 - - S VDS = 15V, ID = 0.2A Forward Transconductance ② Ciss Input Capacitance - - 50 Coss Output Capacitance - - 25 Crss Reverse Transfer Capacitance - - 5 td(on) Turn-On Delay Time - - 20 Rise Time - - - Turn-Off Delay Time - - 20 Fall Time - - - td(off) tf VGS = -20V - gfs tr VGS = 20V µA VGS = 40V VGS = 40V, TC = 125℃ pF VDS = 25V, VGS = 0V, f = 1.0MHz VDD = 30V, ID = 0.2A ns RG = 25Ω ②③ Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. Typ. Max. Units - - 115 mA IS Continuous Source Current ISD Pulse Source Current ① - - 800 mA VSD Diode Forward Voltage ② - - 1.5 V Notes ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2% ③ Essentially Independent of Operating Temperature Test Condition Integral reverse pn-diode In the MOSFET TA = 25 ℃, IS = 115mA VGS = 0V N-CHANNEL Small Signal MOSFET 2N7002MTF 2N7002MTF N-CHANNEL Small Signal MOSFET