RURG1520CC Data Sheet January 2002 15A, 200V Ultrafast Dual Diode Features The RURG1520CC is an ultrafast dual diode with soft recovery characteristics (trr < 30ns). It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction. • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <30ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristic minimizes ringing and electrical noise in many power switching circuits, reducing power loss in the switching transistors. • Avalanche Energy Rated Formerly developmental type TA09926. • General Purpose Ordering Information Packaging PART NUMBER RURG1520CC PACKAGE TO-247 • Planar Construction Applications • Switching Power Supplies • Power Switching Circuits BRAND JEDEC STYLE TO-247 RURG1510C ANODE 1 CATHODE ANODE 2 NOTE: When ordering, use the entire part number. CATHODE (BOTTOM SIDE METAL) Symbol K A1 Absolute Maximum Ratings A2 (Per Leg) TC = 25oC RURG1520CC UNITS Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRRM 200 V Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 200 V DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) 200 V 15 A 30 A 200 A (TC = 157oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 100 W Avalanche Energy (See Figures 8 and 9) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ 20 mJ -65 to 175 oC ©2002 Fairchild Semiconductor Corporation RURG1520CC Rev. B RURG1520CC Electrical Specifications (Per Leg) TC = 25oC, Unless Otherwise Specified SYMBOL TEST CONDITION MIN TYP MAX UNITS IF = 15A - - 1.05 V IF = 15A, TC = 150oC - - 0.85 V VR = 200V - - 100 µA VR = 200V, TC = 150oC - - 500 µA IF = 1A, dIF/dt = 100A/µs - - 30 ns IF = 15A, dIF/dt = 100A/µs - - 35 ns ta IF = 15A, dIF/dt = 100A/µs - 20 - ns tb IF = 15A, dIF/dt = 100A/µs - 10 - ns - - 1.5 oC/W VF IR trr RθJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 6), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 6). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6). RθJC = Thermal resistance junction to case. pw = pulse width. D = duty cycle. Typical Performance Curves 400 100 IR, REVERSE CURRENT (µA) IF , FORWARD CURRENT (A) 100 175oC 10 100oC 25oC 175oC 10 1.0 100oC 0.1 0.01 25oC 0.001 1 0 0.2 0.4 0.6 0.8 1.0 1.2 VF , FORWARD VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE ©2002 Fairchild Semiconductor Corporation 0 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE RURG1520CC Rev. B RURG1520CC Typical Performance Curves (Continued) IF(AV) , AVERAGE FORWARD CURRENT (A) 50 40 t, TIME (ns) trr 30 ta 20 tb 10 0 1 10 16 14 12 DC 10 SQ. WAVE 8 6 4 2 0 140 20 150 160 180 170 TC , CASE TEMPERATURE (oC) IF , FORWARD CURRENT (A) FIGURE 3. trr , ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. CURRENT DERATING CURVE Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT CURRENT SENSE RG IF + VGE - IGBT t1 VDD dIF trr dt ta tb 0 0.25 IRM t2 IRM FIGURE 5. trr TEST CIRCUIT FIGURE 6. trr WAVEFORMS AND DEFINITIONS I = 1A L = 40mH R < 0.1Ω EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL L CURRENT SENSE R + VDD IL IL I V Q1 VDD DUT t0 FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT ©2002 Fairchild Semiconductor Corporation t1 t2 t FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS RURG1520CC Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4