Light Emitting Diode(AlGaInP) KLB-0315 R DIMENSIONS KLB-0315 R has a high bright InGaAlP red LED and has the optimized optical characteristics. Features • Transparent epoxy Encapsulent • High Optical Output Applications • Amusement • Indicator • Display [ Ta=25°C ] Maximum Ratings Parameter Symbol Ratings Unit IF 20 mA IFP 30 mA PD 70 mW Topr. -30 ~ +85 °C Tstg. -40 ~ +100 °C Tsol. 260 °C Forward current Pulse forward current *1 Power dissipation Operating temperature Storage temperature Soldering Temperature *2 *1. IFP Measured under duty £ 1/10 @ 1KHz *2. Soldering time £ 5 Sec [ Ta=25°C ] Electro-Optical Characteristics Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 20 mA - 1.8 2.2 V Optical Output Power Iv IF = 20 mA 1000 1500 - mcd Doninant Wave Length λd IF = 20 mA 620 - 635 nm Spectral half bandwidth ∆λ IF = 20 mA - 20 - nm Half angle ∆Θ IF = 20 mA - 40 - deg. Parameter 1/2 Light Emitting Diode(AlGaInP) KLB-0315 R Forward current vs. Ambient temperature Radiant Intensity vs. Forward current Forward current IF(mA) (IF) 30 1.5 25 Relative intensity w 20 u 15 10 0 0 20 40 80 60 (℃) 100 1 0.5 0 0 5 Ambient temperature Ta 10 15 20 25 30 (IF) 35 Forward current IF Relative intensity vs. Wavelength Relative radiant intensity vs. Ambient temperature 1 10 Intensity [arb.] Relative radiant intensity PO 1.2 1 0.1 0.8 0.6 0.4 0.2 -20 0 20 40 60 80 0 500 550 600 650 700 750 100 (℃) Ambient temperature Ta Wave Length[nm] Forward current vs. Forward voltage Radiant Pattern Angle(deg) (㎃) Forward current IF[mA] 30 25 20 15 10 5 0 0 (V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Forward voltage VF[V] Relative intensity(%) 2/2