KTD1898 Epitaxial Planar NPN Transistors SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Limits Unit Collector-Base Voltage VCBO 100 Vdc Collector-Emitter Voltage VCEO 80 Vdc Emitter-Base Voltage VEBO 5 Vdc IC 1 A(DC) I CP 2 A (Pulse)* PC 0.5 W Collector Current Collector Power Dissipation Junction Temperature, Storage Temperature Tj , Tstg 150, -55 to +150 C * Single pulse Pw = 20ms ELECTRICAL CHARACTERISTICS (Ta=25%C unless otherwise noted ) Parameter Symbol Min Typ Max Unit Collector-Base Breakdown Voltage(Ic=100uA) BV CBO 100 - - V Collector-Emitter Breakdown Voltage(Ic=1mA) BV CEO 80 - - V Emitter-Base Breakdown Voltage(I E =100uA) BVEBO 5 - - V Collector Cutoff Current(VCB=80V) ICBO - - 1 uA Emitter Cutoff Current(VEB =4V) IEBO - - 1 uA WEITRON http://www.weitron.com.tw KTD1898 ELECTRICAL CHARACTERISTICS (Ta=25%C unless otherwise noted ) (Countinued) Min Typ Max Unit Parameter Symbol h FE 70 - 400 - V CE(sat) - - 0.4 V fT - 100 - MHz Cob - 20 - pF DC Current Gain (VCE =3V, Ic=500mA) Collector-Emitter Saturation Voltage (Ic=500mA, IB =20mA) Transition Frequency (VCE=10V, Ic=50mA, f=100MHz) Output Capacitance (VCB=10V, I E=0A, f=1MHz) CLASSIFICATION OF hFE Marking ZO ZY ZG Rank O Y GR Range 70-140 120-240 200-400 ELECTRICAL CHARACTERISTIC CURVES T a=25°C V C E =5V 100 10 1 0.1 T a=25°C C OLLE C T OR C UR R E NT : I C ( A) C OLLE C TOR C UR R E NT : I C (mA) 1000 5mA 0.8 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 B AS E T O E MIT T E R V O LT AG E : V B E (V ) FIG.1 Grounded Emitter Propagation Characteristics WEITRON http://www.weitron.com.tw 4mA 3mA 0.6 2mA 0.4 1mA 0.2 0 0 6mA 1.0 0 2 4 68 I B =0mA 10 C OLLE C T OR T O E MIT T E R V OLT AG E : V C E ( V ) FIG.2 Grounded Emitter Output Characteristics C OLLE C TOR S ATUR ATION VOLTAG E : V C E (sat) ( V) KTD1898 DC C UR R E NT G AIN : hF E T a=25°C 1000 V C E =3V 1V 100 0 0 10 100 1000 T a=25°C 2.0 1.0 0.5 0.2 I C /I B =20/1 0.1 10/1 0.05 0.02 0.01 0 10 C O L L E C T O R C UR R E NT : I C ( mA) 1000 COLLE CTOR OUTPUT CAPACITANCE : Cob ( pF) E MITTE R INPUT CAPACITANCE : Cib ( pF) T R ANS IT ION F R E QUE NC Y : fT (MHz) FIG.4 Collector-Emitter Ssaturation Voltage vs. Collector Current T a=25°C V C E =5V 200 100 50 20 10 5 2 1 2 5 10 20 50 100 200 500 1000 10 5 Ic Max (P uls e) 10 1 0.1 0.2 S 0m 200m S ingle non-repetitive puls e S m 0 =1 w 500m 0 =1 Pw DC P C OLLE C TOR C UR R E NT : I C ( A) 100 100m 50m 20m 10m 5m 2m 1m 0.1 0.2 0.5 1 2 5 10 20 50 100 200 5001000 C O L L E C T O R T O E MIT T E R V O L T AG E : V C E ( V ) FIG.7 Safe Operating Area WEITRON http://www.weitron.com.tw 0.5 1 2 5 10 20 50 100 FIG.6 Collector Output Capacitance vs. Collector-Base Voltage Emitter Input Capacitance vs. Emitter-Base Voltage T a=25°C FIG.5 Gain Bandwidth Product vs. Emitter Current 1 T a=25°C f=1MHz I E =0A Ic=0A C O LLE C T O R T O B AS E V O LT AG E : V C B ( V ) E MIT T E R T O B AS E V O LT AG E : V E B (V ) E MIT T E R C UR R E NT : −I E (mA) 2 1000 C O LLE C T O R C UR R E NT : I C ( mA) FIG.3 DC Current Gain vs. Collector Current 500 100 KTD1898 SOT-89 Outline Dimensions unit:mm SOT-89 E G A H C J B K L WEITRON http://www.weitron.com.tw D Dim A B C D E G H J K L Min Max 1.600 1.400 0.520 0.320 0.560 0.360 0.440 0.350 4.600 4.400 1.800 1.400 2.600 2.300 4.250 3.940 1.500TYP 3.100 2.900