SEMICONDUCTOR KTC3571S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FEATURE ・Low Collector-Emitter Saturation Voltage VCE(sat). ・Higher Efficiency Leading to Less Heat Generation. 120 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V DC IC 1 Pulse ICP 3 Base Current IB 300 mA Collector Power Dissipation** PC 350 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ P Storage Temperature Range DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M K A P J VCBO H Collector-Base Voltage 1 N UNIT C RATING 3 G A SYMBOL Collector Current L 2 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC E B L D ・High Collector Current Capability : IC and ICP. 1. EMITTER 2. BASE 3. COLLECTOR Note : * Package Mounted on 99.5% Alumina 10×8×0.6mm. SOT-23 MARKING Lot No. Type Name KMB ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage V(BR)CBO IC=100μA 120 - - V Collector-Emitter Breakdown Voltage ** V(BR)CEO IC=1mA 100 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=100μA 5 - - V Collector Cut-Off Current ICBO VCB=80V - - 100 nA Emitter Cut-Off Current IEBO VEB=4V, IC=0A - - 100 nA Collector-Emitter Cut-Off Current ICES VCES=80V, VBE=0V - - 100 nA VCE(sat) (1) IC=100mA, IB=10mA - - 0.04 VCE(sat) (2) IC=500mA, IB=50mA - - 0.12 VCE(sat) (3) IC=1A, IB=100mA - - 0.2 VBE(sat) IC=1A, IB=100mA - - 1.05 V VBE VCE=10V, IC=1A - - 0.9 V Collector-Emitter Saturation Voltage ** Base-Emitter Saturation Voltage ** Base-Emitter Voltag DC Current Gain ** hFE(1) VCE=10V, IC=1mA 150 - - hFE(2) VCE=10V, IC=250mA 150 - 500 hFE(3) VCE=10V, IC=500mA 100 - - hFE(4) VCE=10V, IC=1A 80 - - VCE=10V, IC=50mA, f=100MHz 100 - - MHz - 9.5 - pF fT Transition Frequency Collector Output Capacitance V Cob VCB=10V, f=1MHz ** Pulse Width = 300μS, Duty Cycle≤2%. 2010. 2. 24 Revision No : 4 1/3 KTC3571S VCE(sat) - I C 1 IC/IB=10 Ta=100 C 10-1 Ta=25 C Ta=-55 C 10-2 10-1 1 10 102 103 104 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VCE(sat) - I C 10 IC/IB=50 Ta=25 C 1 10-1 10-2 10-1 1 10 DC CURRENT GAIN h FE Ta=-55 C Ta=25 C 0.4 Ta=100 C 10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) 600 VCE=10V 0 10-1 1 10 102 103 Ta=25 C 200 Ta=-55 C 1 10 102 103 COLLECTOR CURRENT I C (mA) VBE(sat) - I C I C - VCE 2 1 10 102 103 COLLECTOR CURRENT I C (mA) 2010. 2. 24 Ta=100 C 400 COLLECTOR CURRENT I C (mA) IC/IB=20 Ta=25 C 10-1 VCE=10V 0 10-1 104 1 10-1 Revision No : 4 104 h FE - I C COLLECTOR CURRENT IC (A) BASE-EMITTER VOLTAGE VBE (V) VBE - I C 0.8 103 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) 1.2 102 104 104 IB=3150µA IB=3500µA IB=2800µA 1.6 IB=2450µA Ta=25 C IB=1400µA 1.2 IB=2100µA 0.8 IB=1750µA IB=1050µA IB=700µA IB=350µA 0.4 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) 2/3 KTC3571S COLLECTOR CURRENT I C (mA) SAFE OPERATING AREA 10000 IC MAX(PULSE)* 100mS 1000 10mS* 1mS* IC MAX(CONTINUOUS) 100 DC OPERATION(Ta=25 C) 10 *SINGLE NONREPETTTTVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 1 0.1 1 10 100 1000 COLLECTOR-EMITTER VOLTAGE VCE (V) 2010. 2. 24 Revision No : 4 3/3