IC
IC
SMD Type
HEXFET Power MOSFET
KRF7350
Features
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape and Reel
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
N-Channel
P-Channel
Unit
VDS
100
-100
V
ID
2.1
-1.5
Continuous Drain Current Ta = 70
ID
1.7
-1.2
Pulsed Drain Current *1
IDM
8.4
-6.0
Drain-Source Voltage
Continuous Drain Current Ta = 25
Power Dissipation
@Ta= 25
2.0
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Single Pulse Avalanche Energy *4
EAS
35
dv/dt
4.0
Peak Diode Recovery dv/dt *2
Junction and Storage Temperature Range
TJ, TSTG
A
W
0.016
W/
20
V
51
mJ
4.3
V/ns
-55 to + 150
Maximum Junction-to-Ambient *3
R
JA
62.5
Junction-to-Drain Lead
R
JL
20
/W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 Pulse width
400 s; duty cycle
2%.
*3 Surface mounted on 1 in square Cu board
*4 N channel: Starting TJ = 25 , L = 4.0mH, RG = 25 , IAS = 4.2A
P channel: Starting TJ = 25 , L = 11mH, RG = 25 , IAS = -3.0A
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IC
IC
SMD Type
KRF7350
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Testconditons
Symbol
100
VGS = 0V, ID = -250 A
P-Ch
-100
V(BR)DSS/
ID = 1mA,Reference to 25
N-Ch
0.12
TJ
ID = -1mA,Reference to 25
P-Ch
-0.11
VGS = 10V, ID = 2.1A*1
N-Ch
V(BR)DSS
RDS(on)
VGS(th)
gfs
IDSS
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain ("Miller") Charge
Qgd
Turn-On Delay Time
td(on)
Turn-Off Delay Time
Fall Time
Input Capacitance
2
IGSS
Total Gate Charge
Rise Time
tr
td(off)
Ciss
Coss
Reverse Transfer Capacitance
Crss
Max
V/
0.21
VGS = -10V, ID = -1.5A*1
P-Ch
N-Ch
2.0
4.0
VDS = VGS, ID = -250 A
P-Ch
-2.0
-4.0
VDS = 50V, ID = 2.1A*1
N-Ch
2.4
VDS = -50V, ID = -1.5A*1
P-Ch
1.1
0.48
VDS = 100V, VGS = 0V
N-Ch
25
P-Ch
-25
VDS = 80V, VGS = 0V, TJ = 70
N-Ch
250
20V
P-Ch
-250
N-Ch
100
P-Ch
100
N-Channel
N-Ch
19
28
ID =2.1A,VDS = 80V,VGS =10V
P-Ch
21
31
N-Ch
3.0
4.5
P-Channel
P-Ch
3.4
5.1
ID = -1.5A,VDS = -80V,VGS = -10V
N-Ch
8.8
13
P-Ch
10
16
N-Ch
6.7
VDD = 50V,ID = 1.A,RG = 22
P-Ch
25
RD=50 ,VGS = 10V
N-Ch
11
P-Channel
P-Ch
13
VDD = -50V,ID = -1.0A,RG = 22
N-Ch
35
P-Ch
30
N-Channel
RD=50 ,VGS = -10V
N-Channel
VGS = 0V,VDS = 25V,f = 1.0MHz
V
S
VDS = -100V, VGS = 0V
VGS =
Unit
V
VDS = VGS, ID = 250 A
tf
Output Capacitance
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Typ
N-Ch
VDS = -80V, VGS = 0V, TJ = 70
Gate-to-Source Forward Leakage
Min
VGS = 0V, ID = 250 A
N-Ch
20
P-Ch
40
N-Ch
380
P-Ch
360
N-Ch
100
P-Channel
P-Ch
110
VGS = 0V,VDS = -25V,f = 1.0MHz
N-Ch
54
P-Ch
65
A
nA
nC
ns
pF
IC
IC
SMD Type
KRF7350
Electrical Characteristics Ta = 25
Parameter
Continuous Source Current
Pulsed Source Current
Body Diode)
Body Diode) *2
ISM
VSD
Reverse Recovery Time
trr
Reverse RecoveryCharge
Qrr
300 s; duty cycle
Min
IS
Diode Forward Voltage
*1 Pulse width
Testconditons
Symbol
Typ
Max
N-Ch
1.8
P-Ch
-1.4
N-Ch
8.4
P-Ch
-6.0
TJ = 25 , IS = 1.8A, VGS = 0V*1
N-Ch
1.3
TJ = 25 , IS = -1.4A, VGS = 0V*1
P-Ch
-1.6
N-Channel
N-Ch
72
110
TJ = 25 , IF =1.8A,di/dt = 100A/
P-Ch
77
120
s*1
P-Channel
TJ=25 ,IF=-1.4A,di/dt=-100A/
s*1
N-Ch
205
310
P-Ch
240
360
Unit
A
V
ns
nC
2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
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