FDW258P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V). • –9 A, –12 V. RDS(ON) = 11 mΩ @ VGS = –4.5 V RDS(ON) = 14 mΩ @ VGS = –2.5 V RDS(ON) = 20 mΩ @ VGS = –1.8 V • Rds ratings for use with 1.8 V logic Applications • Low gate charge • Load switch • High performance trench technology for extremely low RDS(ON) • Motor drive • DC/DC conversion • Power management • Low profile TSSOP-8 package D S S D G S S D TSSOP-8 5 4 6 3 7 2 8 1 Pin 1 Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current Ratings – Continuous (Note 1) – Pulsed PD V ±8 V –9 A –50 Power Dissipation TJ, TSTG Units –12 (Note 1a) 1.3 (Note 1b) 0.6 Operating and Storage Junction Temperature Range W –55 to +150 °C (Note 1a) 87 °C/W (Note 1b) 114 Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device Marking Device Reel Size Tape width 258P FDW258P 13’’ 12mm 2008 Fairchild Semiconductor Corporation Quantity 2500 units FDW258P Rev D1 (W) FDW258P July 2008 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics –12 V BVDSS Drain–Source Breakdown Voltage ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = –10 V, VGS = 0 V –1 IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –8 V. VDS = 0 V –100 nA –1.5 V On Characteristics ID = –250 µA VGS = 0 V, ID = –250 µA, Referenced to 25°C –3 mV/°C µA (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 µA, Referenced to 25°C ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –9 A VDS = –5 V, f = 1.0 MHz V GS = 0 V, ID = –250 µA –0.4 –0.6 3 VGS = –4.5 V, ID = –9 A VGS = –2.5 V, ID = –8 A VGS = –1.8 V, ID = –6.5 A VGS =–4.5 V, ID = –9A, TJ=125° 8.6 10.6 13.8 11.2 mV/°C 11 14 20 14 mΩ –50 A 50 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) 5049 pF 1943 pF 1226 pF (Note 2) 17 31 ns 23 37 ns Turn–Off Delay Time 201 322 ns tf Turn–Off Fall Time 148 237 ns Qg Total Gate Charge 61 73 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDD = –6 V, VGS = –4.5 V, VDS = –6 V, VGS = –4.5 V ID = –1 A, RGEN = 6 Ω ID = –9 A, 8 nC 16 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –1.25 A –0.6 (Note 2) –1.25 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 87°C/W when mounted on a 1in2 pad of 2 oz copper. b) 114°C/W when mounted on a minimum pad of 2 oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDW258P Rev. D1 (W) FDW258P Electrical Characteristics FDW258P Typical Characteristics VGS = -4.5V 2.2 -2.5V -2.0V -ID, DRAIN CURRENT (A) -3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 80 60 -1.8V 40 20 0 0 0.5 1 1.5 2 2.5 2 VGS = - 1.8V 1.8 1.6 -2.0V 1.4 -2.5V 1.2 -3.0V 0 20 40 60 80 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.3 0.025 ID = -9A VGS = - 4.5V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -4.5V 0.8 3 -VDS, DRAIN TO SOURCE VOLTAGE (V) 1.2 1.1 1 0.9 0.8 ID = -4.5A 0.021 0.017 TA = 125oC 0.013 TA = 25oC 0.009 0.005 -50 -25 0 25 50 75 100 125 150 1 2 o 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 TA = -55oC VDS = -5V 60 -IS, REVERSE DRAIN CURRENT (A) 80 -ID, DRAIN CURRENT (A) -3.5V 1 25oC 125oC 40 20 0 VGS = 0V 1 TA = 125oC 0.1 25oC 0.01 -55oC 0.001 0.0001 0.5 1 1.5 2 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2.5 0 0.2 0.4 0.6 0.8 1 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDW258P Rev. D1 (W) FDW258P Typical Characteristics 7000 ID = -9A VDS = -4V -6V 4 6000 CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 -8V 3 2 5000 COSS 4000 3000 2000 CRSS 1 1000 0 0 10 20 30 40 50 0 60 0 3 Qg, GATE CHARGE (nC) P(pk), PEAK TRANSIENT POWER (W) 100µs 1ms 10ms 10 100ms 1s 10s DC 1 VGS = -4.5V SINGLE PULSE RθJA = 114oC/W 0.1 TA = 25oC 0.01 0.01 0.1 1 12 10 100 50 SINGLE PULSE RθJA = 114°C/W TA = 25°C 40 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 9 Figure 8. Capacitance Characteristics. 100 RDS(ON) LIMIT 6 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. -ID, DRAIN CURRENT (A) f = 1 MHz VGS = 0 V CISS Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA 0.2 0.1 o RθJA = 114 C/W 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDW258P Rev. D1 (W) TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * ® tm PDP SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world, 1mW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SuperMOS™ SyncFET™ ® The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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