MMBTA92LT1G, MMBTA93LT1G High Voltage Transistors PNP Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant MAXIMUM RATINGS Rating Symbol 92 93 Unit Collector −Emitter Voltage VCEO −300 −200 Vdc Collector −Base Voltage VCBO −300 −200 Vdc Emitter −Base Voltage VEBO −5.0 −5.0 Vdc Collector Current — Continuous IC −500 1 BASE 2 EMITTER mAdc MMBTA92LT1 = 2D; MMBTA93LT1 = 2E 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation (Note 2) Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature MARKING DIAGRAM 3 DEVICE MARKING Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C SOT−23 (TO−236AF) CASE 318 STYLE 6 2x M G 2x MG G = Specific Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Device Package Shipping† MMBTA92LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel MMBTA92LT3G SOT−23 10000 / Tape & Reel (Pb−Free) MMBTA93LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2010 July, 2010 − Rev. 8 1 Publication Order Number: MMBTA92LT1/D MMBTA92LT1G, MMBTA93LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit −300 −200 − − −300 −200 − − −5.0 − − − −0.25 −0.25 − −0.1 25 40 − − 25 25 − − − − −0.5 −0.5 VBE(sat) − −0.9 Vdc fT 50 − MHz − − 6.0 8.0 OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = −1.0 mAdc, IB = 0) MMBTA92 MMBTA93 Collector −Base Breakdown Voltage (IC = −100 mAdc, IE = 0) MMBTA92 MMBTA93 Emitter −Base Breakdown Voltage (IE = −100 mAdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO Collector Cutoff Current (VCB = −200 Vdc, IE = 0) (VCB = −160 Vdc, IE = 0) MMBTA92 MMBTA93 Emitter Cutoff Current (VEB = −3.0 Vdc, IC = 0) ICBO IEBO Vdc Vdc Vdc mAdc mAdc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = −1.0 mAdc, VCE = −10 Vdc) (IC = −10 mAdc, VCE = −10 Vdc) Both Types Both Types (IC = −30 mAdc, VCE = −10 Vdc) hFE MMBTA92 MMBTA93 Collector −Emitter Saturation Voltage (IC = −20 mAdc, IB = −2.0 mAdc) MMBTA92 MMBTA93 Base−Emitter Saturation Voltage (IC = −20 mAdc, IB = −2.0 mAdc) VCE(sat) − Vdc SMALL−SIGNAL CHARACTERISTICS Current −Gain — Bandwidth Product (IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) Collector−Base Capacitance (VCB = −20 Vdc, IE = 0, f = 1.0 MHz) MMBTA92 MMBTA93 Ccb pF 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 300 h FE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125°C 250 200 25°C 150 -55°C 100 50 0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain http://onsemi.com 2 100 MMBTA92LT1G, MMBTA93LT1G f, T CURRENT-GAIN — BANDWIDTH (MHz) 100 C, CAPACITANCE (pF) Cib @ 1MHz 10 Ccb @ 1MHz 1.0 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 150 130 110 90 70 50 TJ = 25°C VCE = 20 Vdc F = 20 MHz 30 10 1000 1 3 Figure 2. Capacitance 5 11 13 15 7 9 IC, COLLECTOR CURRENT (mA) 17 19 21 Figure 3. Current−Gain − Bandwidth 1.4 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ -55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125°C, IC/IB = 10 VBE(sat) @ -55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ -55°C, VCE = 10 V 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. “ON” Voltages 1 IC, COLLECTOR CURRENT (A) V, VOLTAGE (VOLTS) 1.2 10 ms 0.1 1.0 s 0.01 0.001 1 10 100 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. Safe Operating Area http://onsemi.com 3 1000 MMBTA92LT1G, MMBTA93LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 L1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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