ONSEMI MMBTA70LT1G

MMBTA70LT1G
General Purpose Transistor
PNP Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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Compliant
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO
−40
Vdc
Emitter−Base Voltage
VEBO
−4.0
Vdc
IC
−100
mAdc
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
300
2.4
mW
mW/°C
RJA
417
°C/W
TJ, Tstg
−55 to +150
°C
Collector Current − Continuous
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
PD
RJA
3
1
2
PD
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
M2C M G
G
1
M2C = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
MMBTA70LT1G
Package
Shipping†
SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 3
1
Publication Order Number:
MMBTA70LT1/D
MMBTA70LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
−40
−
−4.0
−
−
−100
40
400
−
−0.25
125
−
−
4.0
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = −1.0 mAdc, IB = 0)
V(BR)CEO
Emitter−Base Breakdown Voltage
(IE = −100 Adc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = −30 Vdc, IE = 0)
ICBO
Vdc
Vdc
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = −5.0 mAdc, VCE = −10 Vdc)
hFE
Collector−Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
VCE(sat)
−
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −5.0 mAdc, VCE = −10 Vdc, f = 100 MHz)
fT
Output Capacitanc
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
MHz
pF
TYPICAL NOISE CHARACTERISTICS
(VCE = − 5.0 Vdc, TA = 25°C)
10
7.0
IC = 10 A
5.0
In, NOISE CURRENT (pA)
en, NOISE VOLTAGE (nV)
1.0
7.0
5.0
BANDWIDTH = 1.0 Hz
RS ≈ 0
30 A
3.0
100 A
300 A
1.0 mA
2.0
BANDWIDTH = 1.0 Hz
RS ≈ ∞
IC = 1.0 mA
3.0
2.0
300 A
1.0
0.7
0.5
100 A
30 A
0.3
0.2
1.0
10 A
0.1
10
20
50
100 200
500 1.0k
f, FREQUENCY (Hz)
2.0k
5.0k
10k
10
Figure 1. Noise Voltage
20
50
100 200
500 1.0k 2.0k
f, FREQUENCY (Hz)
Figure 2. Noise Current
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2
5.0k
10k
MMBTA70LT1G
NOISE FIGURE CONTOURS
1.0M
500k
BANDWIDTH = 1.0 Hz
200k
100k
50k
20k
10k
0.5 dB
5.0k
1.0 dB
2.0k
1.0k
500
2.0 dB
3.0 dB
200
100
RS , SOURCE RESISTANCE (OHMS)
RS , SOURCE RESISTANCE (OHMS)
(VCE = − 5.0 Vdc, TA = 25°C)
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (A)
BANDWIDTH = 1.0 Hz
200k
100k
50k
20k
10k
0.5 dB
5.0k
1.0 dB
2.0k
1.0k
500
2.0 dB
3.0 dB
200
100
5.0 dB
10
1.0M
500k
500 700 1.0k
5.0 dB
10
20
Figure 3. Narrow Band, 100 Hz
RS , SOURCE RESISTANCE (OHMS)
1.0M
500k
30
50 70 100
200 300
IC, COLLECTOR CURRENT (A)
500 700 1.0k
Figure 4. Narrow Band, 1.0 kHz
10 Hz to 15.7 kHz
200k
100k
50k
Noise Figure is Defined as:
NF + 20 log10
20k
10k
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
200
100
10
20
30
50 70 100
200 300
ƫ
en2 ) 4KTRS ) In 2RS2 1ń2
4KTRS
en = Noise Voltage of the Transistor referred to the input. (Figure 3)
In = Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10−23 j/°K)
T = Temperature of the Source Resistance (°K)
RS = Source Resistance (Ohms)
5.0k
2.0k
1.0k
500
ƪ
500 700 1.0k
IC, COLLECTOR CURRENT (A)
Figure 5. Wideband
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MMBTA70LT1G
TYPICAL STATIC CHARACTERISTICS
h FE, DC CURRENT GAIN
400
TJ = 125°C
25°C
200
-55°C
100
80
60
VCE = 1.0 V
VCE = 10 V
40
0.003 0.005
0.01
0.02 0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
100
1.0
TA = 25°C
IC, COLLECTOR CURRENT (mA)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. DC Current Gain
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
IB, BASE CURRENT (mA)
TA = 25°C
PULSE WIDTH = 300 s
80 DUTY CYCLE ≤ 2.0%
300 A
200 A
150 A
40
100 A
20
20
50 A
0
5.0
10
15
20
25
30
35
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
θV, TEMPERATURE COEFFICIENTS (mV/ °C)
1.2
V, VOLTAGE (VOLTS)
40
Figure 8. Collector Characteristics
TJ = 25°C
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.5 1.0
2.0
5.0
10
20
IC, COLLECTOR CURRENT (mA)
250 A
0
5.0 10
1.4
0.2
350 A
60
Figure 7. Collector Saturation Region
0.1
IB = 400 A
50
1.6
*APPLIES for IC/IB ≤ hFE/2
0.8
*VC for VCE(sat)
0
- 55°C to 25°C
0.8
25°C to 125°C
1.6
2.4
0.1
100
25°C to 125°C
Figure 9. “On” Voltages
VB for VBE
0.2
- 55°C to 25°C
0.5 1.0 2.0
5.0
10 20
IC, COLLECTOR CURRENT (mA)
Figure 10. Temperature Coefficients
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50
100
MMBTA70LT1G
TYPICAL DYNAMIC CHARACTERISTICS
500
300
200
200
100
70
50
30
tr
20
10
7.0
5.0
1.0
100
70
50
tf
30
td @ VBE(off) = 0.5 V
20
2.0
3.0
20 30
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
50 70
10
-1.0
100
- 2.0 - 3.0 - 5.0 - 7.0 -10
- 20 - 30
IC, COLLECTOR CURRENT (mA)
- 50 - 70 -100
Figure 12. Turn−Off Time
500
10
TJ = 25°C
TJ = 25°C
7.0
VCE = 20 V
300
Cib
C, CAPACITANCE (pF)
f,
T CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
Figure 11. Turn−On Time
5.0 V
200
100
5.0
3.0
2.0
Cob
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
1.0
0.05
50
0.1
0.2
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 13. Current−Gain — Bandwidth Product
Figure 14. Capacitance
10
hfe ≈ 200
@ IC = -1.0 mA
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10
20
50
200
VCE = -10 Vdc
f = 1.0 kHz
TA = 25°C
hoe, OUTPUT ADMITTANCE ( mhos)
20
hie , INPUT IMPEDANCE (k Ω )
VCC = - 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
ts
300
t, TIME (ns)
t, TIME (ns)
1000
700
500
VCC = 3.0 V
IC/IB = 10
TJ = 25°C
100
70
50
VCE = 10 Vdc
f = 1.0 kHz
TA = 25°C
30
20
hfe ≈ 200
@ IC = 1.0 mA
10
7.0
5.0
3.0
0.2
0.5
20
1.0 2.0
5.0
10
IC, COLLECTOR CURRENT (mA)
50
2.0
0.1
100
Figure 15. Input Impedance
0.2
0.5
20
1.0 2.0
5.0
10
IC, COLLECTOR CURRENT (mA)
Figure 16. Output Admittance
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5
50
100
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
MMBTA70LT1G
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
Figure 18.
0.05
P(pk)
0.02
0.03
0.02
t1
0.01
0.01
0.01 0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
t2
2.0
5.0
10
20
50
t, TIME (ms)
100 200
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN−569)
ZJA(t) = r(t) • RJA
TJ(pk) − TA = P(pk) ZJA(t)
500 1.0k 2.0k
5.0k 10k 20k 50k 100k
Figure 17. Thermal Response
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
104
IC, COLLECTOR CURRENT (nA)
VCC = 30 V
103
ICEO
102
101
ICBO
AND
ICEX @ VBE(off) = 3.0 V
100
10-1
10-2
-4
0
-2
0
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 19. Typical Collector Leakage Current
A train of periodical power pulses can be represented by the
model as shown in Figure 18. Using the model and the device
thermal response the normalized effective transient thermal
resistance of Figure 17 was calculated for various duty cycles.
To find ZJA(t), multiply the value obtained from Figure 17
by the steady state value RJA.
Example:
Dissipating 2.0 watts peak under the following conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see AN−569.
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MMBTA70LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
e
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMBTA70LT1/D