MS1076 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • 30 MHz 28 VOLTS GOLD METALLIZATION POUT = 220 W PEP GP = 12 dB GAIN MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1076 is a 28 volt epitaxial NPN silicon planar transistor designed primarily for SSB and VHF communications. This device utilizes an emitter ballasted die geometry for maximum ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCBO VCEO VEBO IC PDISS TJ TSTG Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value Unit 70 35 4.0 16 250 +200 - 65 to +150 V V V A W °C °C 0.7 °C/W Thermal Data RTH(J-C) Junction - Case Thermal Resistance Rev A: October 2009 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS1076 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC Symbol BVCES BVCEO BVEBO ICEO ICES HFE Test Conditions IC = 100 mA IC = 200 mA IE = 20 mA VCE = 30 V VCE = 35 V VCE = 5 V, IC = 7 A Min. Value Typ. Max. Unit 70 35 4.0 ----15 ------------- ------5 5 60 V V V mA mA --- DYNAMIC Symbol Min. Value Typ. Max. Unit POUT f = 30 MHz VCE = 28 V ICQ = 750 mA 220 --- --- GP f = 30 MHz VCE = 28 V ICQ = 750 mA 12 --- --- WPEP dB ηC f = 30 MHz VCE = 28 V ICQ = 750 mA 40 --- --- % IMD f = 30 MHz VCE = 28 V ICQ = 750 mA --- --- -30 dBc COB f = 1 MHz VCB = 28 V --- 450 --- pf Conditions Test Conditions f1 = 30.000 MHz f2 = 30.001 MHz HFE BINNING (marked on lid with appropriate letter): A = 15-19 D = 27-32 G = 45-50 B = 19-22.5 E = 32-38 H = 50-55 C = 22.5-27 F = 38-45 I = 55-60 IMPEDANCE DATA FREQ 30 MHz ZIN ZCL 1.2 + j0.41 1.25 + j1.92 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS1076 TYPICAL PERFORMANCE Pout vs Pin 275 250 225 200 Pout(W) 175 150 125 100 75 50 25 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Pin(W ) Gain vs Pout 15.50 15.00 14.50 Gain(dB) 14.00 13.50 13.00 12.50 12.00 11.50 11.00 0 20 40 60 80 100 120 140 160 180 200 220 240 260 Pout(W ) Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS1076 TEST CIRCUIT Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS1076 BIAS CIRCUIT Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS1076 PACKAGE MECHANICAL DATA Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.