MICROSEMI MS3022

MS3022
1 Watts, 28 Volts
Class-C, CW 1.0 to 2.0 GHz
GENERAL DESCRIPTION
The MS3022 is a common base silicon NPN transistor designed for Class-C
general purpose microwave applications. The device is capable of withstanding an
infinite load VSWR under rated conditions. The MS3022 is particularly suited for
microwave communication links in the 1.0 to 2.0 GHz frequency ranges.
CASE OUTLINE
.250 2LFL M210
(Common Base)
Features
• GOLD METALLIZATIOM
• POUT = 1.0 W MINIMUM
• GP = 7.0 dB
• COMMON BASE
PIN CONNECTION
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation @25°C (Pd)
7
Voltage and Current
Collector to Base Voltage (BVCES)
45
Emitter to Base Voltage (BVEBO)
3.5
Collector Current (IC)
0.2
Temperatures
Storage Temperature
-65 to +150
Operating Junction Temperature
+200
W (At rated pulse condition)
V
V
A
°C
°C
1. Collector 2. Base
3. Emitter
4. Base
ELECTRICAL CHARACTERISTICS @ 25°°C
SYMBOL
CHARACTERISTICS
BVCEO
BVCBO
BVEBO
ICBO
HFE
θjc1
Collector to Emitter Breakdown
Collector to Base Breakdown
Emitter to Base Breakdown
Collector to Base Leakage
DC – Current Gain
Thermal Resistance
NOTES:
TEST CONDITIONS
IC = 5 mA, RBE = 50 Ω
IC = 1 mA, IB = 0 mA
IE = 1 mA, IC = 0 mA
VCB = 28.0 V
IC = 0.1A, VCE = 5V
MIN
TYP
MAX
UNITS
0.5
120
25
V
V
V
mA
°C/W
45
45
3.5
15
1. At rated output power, pulse conditions and MSC fixture
Rev. A : Oct. 2009
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
MS3022
FUNCTIONAL CHARACTERISTICS @ 25°°C
SYMBOL
CHARACTERISTICS
POUT
PIN
GP
ηC
COB
Power Out
Power Input
Power Gain
Collector Efficiency
Collector Base Capacitance
TEST CONDITIONS
MIN
F = 2.0GHz
VCB = 28V
Pin = 0.2W
CW
TYP
MAX
1.0
0.2
7.0
35
F = 1 MHz, VCB = 28V
3.2
UNITS
W
W
dB
%
pF
Typical Performance (2.0 GHz)
Efficie ncy
Input/Output
60.0%
1.40
50.0%
1.20
40.0%
1.00
Eff.
Ouput Power (W)
1.60
0.80
30.0%
0.60
20.0%
0.40
10.0%
0.20
0.00
0.00
0.05
0.10
0.15
0.20
0.0%
0.00
0.25
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
Output Powe r(W)
Input Powe r (W)
Typical Performance (1.0 GHz)
Input/Output
Efficie ncy
2.00
70.0%
60.0%
1.60
1.40
50.0%
1.20
Eff.
Ouput Power (W)
1.80
1.00
40.0%
0.80
30.0%
0.60
0.40
20.0%
0.20
0.00
0.00
0.05
0.10
0.15
Input Powe r (W)
0.20
0.25
10.0%
0.00
0.50
1.00
1.50
2.00
Output Powe r(W)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
MS3022
MS3022 Test Circuit Layout (@ 2GHz)
MS3022 Test Circuit Component Designations and Values
Part
C1, C2
C4
M1
M3
M5
M7
M9
M11
Description
39pF Chip Capacitor (ATC 200A)
47uF 63V Electrolytic Capacitor
100 x 675 mils (W x L)
200 x 475 mils (W x L)
445 x 300 mils (W x L)
445 x 350 mils (W x L)
86 x 460 mils (W x L)
25 x 1040 mils (W x L)
Part
C3
L1
M2
M4
M6
M8
M10
PCB
Description
100pF Chip Capacitor (ATC 200B)
Length: 0.32”, AWG20
86 x 850 mils (W x L)
240 x 275 mils (W x L)
645 x 350 mils (W x L)
86 x 225 mils (W x L)
25 x 1055 mils (W x L)
Arlon, εr=2.55, 31mils, 1oz
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
MS3022
Typical Impedance Values
Input
Matching
Network
ZS
Frequency
1.0 GHz
1.5 GHz
1.7 GHz
2.0 GHz
Output
Matching
Network
DUT
ZS (Ω)
8.3 – j7.0
12.0 – j16.0
15.0 – j14.0
21.5 – j22.5
ZL
ZL (Ω)
18.0 + j38.0
9.6 + j30.0
7.0 + j22.0
5.0 + j12.0
* VCB = 28V, PIN = 0.2W POUT > 1W
* CW
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.
MS3022
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi.com or contact our factory direct.