TSMF3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF3700 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology in a miniature PL-CC-2 SMD package. It has been designed to meet the increasing demand on optoelectronic devices for surface mounting. The package consists of a lead frame which is surrounded with a white thermoplast. The reflector inside the package is filled up with clear epoxy. 94 8553 Features • • • • • • • • • • • • SMT IRED with extra high radiant power Low forward voltage Compatible with automatic placement equipment EIA and ICE standard package Suitable for infrared, vapor phase and wavesolder process Available in 8 mm tape Suitable for pulse current operation Extra wide angle of half intensity ϕ = ± 60° Peak wavelength λp = 870 nm High reliability Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Infrared source in tactile keyboards IR diode in low space applications High performance PCB mounted infrared sensors High power infrared emitter for miniature light barriers Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Reverse Voltage Forward current Symbol Value Unit VR 5 V IF 100 mA Peak Forward Current tp/T = 0.5, tp = 100 µs IFM 200 mA Surge Forward Current tp = 100 µs IFSM 1 A Power Dissipation PV 160 mW Junction Temperature Tj 100 °C Operating Temperature Range Tamb - 55 to + 100 °C Storage Temperature Range Tstg - 55 to + 100 °C Tsd 260 °C RthJA 450 K/W Soldering Temperature Thermal Resistance Junction/ Ambient Document Number 81032 Rev. 1.4, 08-Mar-05 t ≤ 10 sec www.vishay.com 1 TSMF3700 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Forward Voltage Typ. Max IF = 100 mA, tp = 20 ms Symbol VF 1.4 1.7 IF = 1 A, tp = 100 µs VF 2.4 TKVF - 1.7 Temp. Coefficient of VF IF = 100 mA Reverse Current VR = 5 V IR Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj Min Unit V V mV/K 10 160 µA pF Optical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Radiant Intensity Symbol Min Typ. Max Unit IF = 100 mA, tp = 20 ms Ie 5 7 25 mW/sr IF = 1 A, tp = 100 µs Ie 60 mW/sr Radiant Power IF = 100 mA, tp = 20 ms φe 32 mW Temp. Coefficient of φe IF = 100 mA TKφe - 0.8 %/K ϕ ± 60 deg Peak Wavelength IF = 100 mA λp 870 nm Angle of Half Intensity Spectral Bandwidth IF = 100 mA ∆λ 40 nm Temp. Coefficient of λp IF = 100 mA TKλp 0.2 nm/K Rise Time IF = 100 mA tr 30 ns Fall Time IF = 100 mA Virtual Source Diameter tf 30 ns ∅ 0.5 mm Typical Characteristics (Tamb = 25 °C unless otherwise specified) 125 I F - Forward Current ( mA ) PV - Power Dissipation ( mW ) 250 200 150 R thJA 100 50 100 75 R thJA 50 25 0 0 0 94 8029 20 40 60 80 Tamb - Ambient Temperature ( °C ) Figure 1. Power Dissipation vs. Ambient Temperature www.vishay.com 2 0 100 94 7916 20 40 60 80 100 Tamb - Ambient Temperature ( °C ) Figure 2. Forward Current vs. Ambient Temperature Document Number 81032 Rev. 1.4, 08-Mar-05 TSMF3700 Vishay Semiconductors 100 Tamb < 60°C t p /T = 0.005 I e - Radiant Intensity ( mW/sr ) I F - Forward Current ( mA ) 10000 0.01 1000 0.02 0.05 100 0.2 0.5 DC 0.1 10 1 0.01 0.1 1 10 1 0.1 10 0 100 t p - Pulse Length ( ms ) 95 9985 10 15903 10 4 1000 Φ e - Radiant Power ( mW ) I F - Forward Current ( mA) 10 4 Figure 6. Radiant Intensity vs. Forward Current Figure 3. Pulse Forward Current vs. Pulse Duration 10 3 10 2 10 1 10 0 0 1 2 3 100 10 1 0.1 10 0 4 V F - Forward Voltage ( V ) 94 8880 10 1 10 2 10 3 I F - Forward Current ( mA ) 15902 10 4 Figure 7. Radiant Power vs. Forward Current Figure 4. Forward Current vs. Forward Voltage 1.2 1.6 1.1 1.2 I F = 10 mA I e rel ; Φe rel V Frel - Relative Forward Voltage 10 1 10 2 10 3 I F - Forward Current ( mA ) 1.0 0.9 I F = 20 mA 0.8 0.4 0.8 0.7 0 94 7990 20 40 60 80 T amb - Ambient Temperature ( ° C ) Figure 5. Relative Forward Voltage vs. Ambient Temperature Document Number 81032 Rev. 1.4, 08-Mar-05 0 -10 0 10 100 94 7993 50 100 140 T amb - Ambient Temperature ( ° C ) Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature www.vishay.com 3 TSMF3700 Vishay Semiconductors 0° 10° 20° 30° I e rel - Relative Radiant Intensity Φe rel - Relative Radiant Power 1.25 1.0 0.75 0.5 0.25 I F = 100 mA 0 820 870 λ - Wavelength ( nm ) 15821 40° 1.0 0.9 50° 0.8 60° 70° 0.7 920 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8013 Figure 9. Relative Radiant Power vs. Wavelength Figure 10. Relative Radiant Intensity vs. Angular Displacement Package Dimensions in mm 3.5 ± 0.2 0.85 + 0.10 1.65- 0.05 technical drawings according to DIN specifications Mounting Pad Layout Pin identification area covered with solder resist 4 2.6 (2.8) A 2.2 C 2.8 + 0.15 1.2 4 1.6 (1.9) ∅ 2.4 3 + 0.15 Dimensions: IR and Vaporphase (Wave Soldering) Drawing-No. : 6.541-5025.01-4 Issue: 7; 05.04.04 95 11314 www.vishay.com 4 Document Number 81032 Rev. 1.4, 08-Mar-05 TSMF3700 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 81032 Rev. 1.4, 08-Mar-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1