VISHAY TCPT1300X01

TCPT1300X01
Vishay Semiconductors
Subminiature Transmissive Optical Sensor with Phototransistor
Output, RoHS Compliant, Released for Lead (Pb)-free Solder
Process, AEC-Q101 Released
Description
The TCPT1300X01 is a compact transmissive sensor
that includes an infrared emitter and a phototransistor
detector, located face-to-face in a surface mount
package.
Pin connection
Top view
Cath.
E
Features
NC
• Product designed and qualified acc.
AEC-Q101 for the automotive market
• Package type: surface mount
• Detector type: phototransistor
• Dimensions:
L 5.5 mm x W 4 mm x H 4 mm
• Gap: 3 mm
•
•
•
•
•
NC
Coll.
A
19601
e4
Aperture: 0.3 mm
Typical output current under test: IC = 0.6 mA
Emitter wavelength: 950 nm
Lead (Pb)-free soldering released
Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
• Minimum order quantity: 2000 pcs, 2000 pcs/reel
Applications
• Automotive optical sensors
• Accurate position sensor for encoder
• Detection of motion speed
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Coupler
Parameter
Power dissipation
Test condition
Tamb ≤ 25 °C
Ambient temperature range
Storage temperature range
Soldering temperature
in accordance with fig. 15
Symbol
Value
Unit
P
150
mW
Tamb
- 40 to + 85
°C
Tstg
- 40 to + 100
°C
Tsd
260
°C
Symbol
Value
Unit
VR
5
V
Input (Emitter)
Parameter
Test condition
Reverse voltage
Forward current
Forward surge current
tp ≤ 10 µs
Power dissipation
Tamb ≤ 25 °C
IF
25
mA
IFSM
200
mA
PV
75
mW
Unit
Output (Detector)
Symbol
Value
Collector emitter voltage
Parameter
Test condition
VCEO
20
V
Emitter collector voltage
VECO
7
V
IC
20
mA
PV
75
mW
Collector current
Power dissipation
Document Number 84778
Rev. 1.3, 20-Jul-07
Tamb ≤ 25 °C
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TCPT1300X01
Vishay Semiconductors
P - Power Dissipation (mW)
200
Sensor
150
100
50
Emitter/Detector
0
0
16538
100
75
25
50
Tamb - Ambient Temperature (°C)
Figure 1. Power Dissipation Limit vs. Ambient Temperature
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Coupler
Parameter
Test condition
Collector current
VCE = 5 V, IF = 15 mA
Collector emitter saturation
voltage
IF = 15 mA, IC = 0.05 mA
Symbol
Min
Typ.
IC
300
600
VCEsat
Max
Unit
µA
0.4
V
Typ.
Max
Unit
1.2
1.4
V
10
µA
Input (Emitter)
Parameter
Test condition
Symbol
Forward voltage
IF = 15 mA
VF
Reverse current
VR = 5 V
IR
Junction capacitance
VR = 0 V, f = 1 MHz
Cj
Min
25
pF
Output (Detector)
Symbol
Min
Collector emitter voltage IC
Parameter
IC = 1 mA
Test condition
VCEO
20
Typ.
Max
Unit
V
Emitter collector voltage
IE = 100 µA
VECO
7
V
Collector dark current
VCE = 25 V, IF = 0, E = 0
ICEO
1
100
nA
Typ.
Max
Unit
Switching Characteristics
Parameter
Test condition
Symbol
Min
Rise time
IC = 0.3 mA, VCE = 5 V,
RL = 100 Ω (see figure 2)
tr
20.0
150
µs
Fall time
IC = 0.3 mA, VCE = 5 V,
RL = 100 Ω (see figure 2)
tf
30.0
150
µs
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Document Number 84778
Rev. 1.3, 20-Jul-07
TCPT1300X01
Vishay Semiconductors
IF
IF
0
0
IC
+5V
IF
IC
adjusted by I F
RG = 50 Ω
tp
= 20
T
tp = 1 ms
50 Ω
10 %
0
Channel I
Oscilloscope
Channel II
RL
CL
100 Ω
tp
t
100 %
90 %
1M
20 pF
20688
tp
td
tr
t on (= t d + tr)
tr
td
t on
ts
pulse duration
delay time
rise time
turn-on time
ts
tf
t off (= t s +t f )
t
tf
t off
storage time
fall time
turn-off time
96 11698
Figure 2. Test Circuit for tr and tf
Figure 3. Switching Times
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
10
IC - Collector Current (mA)
IF - Forward Current (mA)
1000
100
10
1
0.1
0
0.2 0.4 0.6 0.8 1
20589
VF - Forward Voltage (V)
IF = 15 mA
1.2
1.1
IC - Collector Current (mA)
VF - Forward Voltage (V)
10
100
10
1.3
IF = 25 mA
1
IF = 15 mA
IF = 5 mA
0.1
IF = 3 mA
0.01
- 20
0
20
40
60
80
Tamb - Ambient Temperature (°C)
Document Number 84778
0.1
100
Figure 5. Forward Voltage vs. Ambient Temperature
Rev. 1.3, 20-Jul-07
1
IF - Forward Current (mA)
Figure 6. Collector Current vs. Forward Current
1.4
20592
0.01
20591
Figure 4. Forward Current vs. Forward Voltage
1.0
- 40
0.1
0.001
0.1
1.2 1.4 1.6 1.8 2 2.2
VCE = 5 V
1
20689
1
10
100
VCE - Collector Emitter Voltage (V)
Figure 7. Collector Current vs. Collector Emitter Voltage
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TCPT1300X01
Vishay Semiconductors
1
IC = 50 µA
0.18
0.16
IF = 5 mA
0.14
0.12
0.10
IF = 15 mA
0.08
0.06
0.04
0.02
0.00
- 40
- 20
0
20
40
60
80
s
0.8
0.6
0.4
0.2
0
- 1.5
100
-1
20595
Tamb - Ambient Tempearture (°C)
20590
IC rel - Relative Collector Current
VCEsat - Coll. Emitter Saturation Voltage (V)
0.20
Figure 8. Collector Emitter Saturation Voltage vs.
Ambient Temperature
- 0.5
0
IF = 15 mA
0.5
0.4
0.3
IF = 5 mA
0.2
0.1
0.0
- 40
S
ICrel - Rel. Collector Current
0.6
1 ± 0.2
IC - Collector Current (mA)
1.5
1
VCE = 5 V
Optical Axis
0.5
0
- 20
20593
0
20
40
60
80
- 1.5
100
Tamb - Ambient Temperature (°C)
Figure 9. Collector Current vs. Ambient Temperature
-1
- 0.5
0
0.5
1
1.5
S - Vertical Displacement (mm)
20610
Figure 12. Relative Collector Current vs. Vertical Displacement
10000
100
90
IF = 0
tr/tf - Rise/Fall Time (µs)
ICE0 - Collector Dark Current (nA)
1
Figure 11. Relative Collector Current vs. Horizontal Displacement
0.7
1000
VCE = 70 V
VCE = 25 V
VCE = 5 V
100
10
80
RL = 100 Ω
70
60
50
40
tf
30
tr
20
10
1
0
0
20594
10
20
30
40
50
60
70
80
90 100
Tamb - Ambient Temperature (°C)
Figure 10. Collector Dark Current vs. Ambient Temperature
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4
0.5
s - Horizontal Displacement
0
20599
250
500 750 1000 1250 1500 1750 2000
IC - Collector Current (µA)
Figure 13. Rise/Fall Time vs. Collector Current
Document Number 84778
Rev. 1.3, 20-Jul-07
TCPT1300X01
Vishay Semiconductors
Floor Life
IF = 15 mA
+ VC = 5 V
Level 1, acc. JEDEC, J-STD-020. No time limit.
Reflow Solder Profile
300
74HCT14
VE
Temperature (°C)
10 kΩ
UQ
13887
GND
200
max. 30 s
150
max. 100 s
max. 120 s
100
max. Ramp Down 6 °C/s
max. Ramp Up 3 °C/s
50
Figure 14. Application example
max. 260 °C
245 °C
255
255°C°C
240 °C
217 °C
250
0
0
19841
50
100
150
200
250
300
Time (s)
Figure 15. Lead (Pb)-free Reflow Solder Profile acc. J-STD-020C
Reliability Tests in Reference to AEC-Q101 Release
Condition
Duration
Lot Size - Rejects
High temperature storage
Test
Tstg(max) = 100 °C
1000 h
3 x 50 pcs - 0 pcs
Low temperature storage
Tstg(min) = - 40 °C
1000 h
3 x 50 pcs - 0 pcs
Temperature cycling
- 40 °C/+ 100 °C
1000 x
3 x 77 pcs - 0 pcs
85 °C/85 % RH,
Emitters: VR = 4 V, detectors: VCEO = 5 V
1000 h
3 x 77 pcs - 0 pcs
Emitters: IF = 80 mA DC, detectors: VCE = 16 V,
duty cycle: 2 min on, 2 min off, Tamb = 25 °C
1000 h
(15000 cycles)
3 x 77 pcs - 0 pcs
H3TRB
Intermittent operational life
Document Number 84778
Rev. 1.3, 20-Jul-07
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TCPT1300X01
Vishay Semiconductors
Package Dimensions in millimeters
19591
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Document Number 84778
Rev. 1.3, 20-Jul-07
TCPT1300X01
Vishay Semiconductors
Package Dimensions in millimeters
20601
Document Number 84778
Rev. 1.3, 20-Jul-07
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TCPT1300X01
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages,
and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated
with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 84778
Rev. 1.3, 20-Jul-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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document or by any conduct of Vishay.
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Document Number: 91000
Revision: 18-Jul-08
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