TLWR990. VISHAY Vishay Semiconductors TELUX™ Description The TELUX™ series is a clear, non diffused LED for applications where supreme luminous flux is required. It is designed in an industry standard 7.62 mm square package utilizing highly developed (AS) AllnGaP technology. The supreme heat dissipation of TELUX™ allows applications at high ambient temperatures. All packing units are binned for luminous flux, forward voltage and color to achieve the most homogenous light appearance in application. SAE and ECE color requirements for automobile application are available for color red. ESD resistivity 2 kV (HBM) according to MIL STD 883D, method 3015.7. Features • Utilizing one of the world’s brightest (AS) AllnGaP technologies • High luminous flux • Supreme heat dissipation: RthJP is 90 K/W • High operating temperature: Tamb = - 40 to + 110 °C • Meets SAE and ECE color requirements for the automobile industry for color red • Packed in tubes for automatic insertion • Luminous flux, forward voltage and color categorized for each tube • Small mechanical tolerances allow precise usage of external reflectors or lightguides • Lead-free device 19232 e3 Pb Pb-free Applications Exterior lighting Dashboard illumination Tail-, Stop - and Turn Signals of motor vehicles Replaces small incandescent lamps Traffic signals and signs Parts Table Part Color, Luminous Intensity Angle of Half Intensity (±ϕ) Technology TLWR9900 Red, φV > 2500 mlm 45 ° AllnGaP on GaAs TLWR9901 Red, φV > (2500 to 6100) mlm 45 ° AllnGaP on GaAs Document Number 83213 Rev. 1.6, 31-Aug-04 www.vishay.com 1 TLWR990. VISHAY Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified TLWR990. Symbol Value Reverse voltage Parameter IR = 100 µA Test condition VR 10 V DC Forward current Tamb ≤ 85 °C IF 70 mA Surge forward current tp ≤ 10 µs Power dissipation Tamb ≤ 85 °C Unit IFSM 0.1 A PV 187 mW Tj 125 °C Operating temperature range Tamb - 40 to + 110 °C Storage temperature range Tstg - 55 to + 110 °C Tsd 260 °C RthJA 200 K/W Junction temperature Soldering temperature t ≤ 5 s, 1.5 mm from body preheat temperature 100 °C/ 30 sec. Thermal resistance junction/ ambient with cathode heatsink of 70 mm2 Optical and Electrical Characteristics Tamb = 25 °C, unless otherwise specified Red TLWR9900 Parameter Total flux Symbol Min Typ. IF = 70 mA, RthJA = 200 °K/W Test condition φV 2500 3200 611 615 Max Unit mlm Luminous intensity/Total flux IF = 70 mA, RthJA = 200 °K/W IV/φV Dominant wavelength IF = 70 mA, RthJA = 200 °K/W λd 0.7 Peak wavelength IF = 70 mA, RthJA = 200 °K/W λp 624 nm Angle of half intensity IF = 70 mA, RthJA = 200 °K/W ϕ ± 45 deg ϕ0.9V mcd/mlm 634 100 nm deg Total included angle 90 % of Total Flux Captured Forward voltage IF = 70 mA, RthJA = 200 °K/W VF 1.83 2.2 Reverse voltage IR = 100 µA VR 10 20 Temperature coefficient < λd IF = 70 mA TCλd 17 nm/K Temperature coefficient VF IF = 70 mA, T > - 25 °C TCVF - 2.9 mV/K 2.7 V V <np> www.vishay.com 2 Document Number 83213 Rev. 1.6, 31-Aug-04 TLWR990. VISHAY Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 0° I V rel - Relative Luminous Intensity PV – Power Dissipation ( mW ) 200 175 Red 150 125 100 75 50 25 RthJA=200K/W 10° 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0 0 15982 20 40 60 80 100 120 Tamb – Ambient Temperature ( qC ) Figure 1. Power Dissipation vs. Ambient Temperature 0.6 0.4 16200 0.2 0 0.2 0.4 Angular Displacement 0.6 Figure 4. Rel. Luminous Intensity vs. Angular Displacement 100 90 Red % Total Luminous Flux I F – Forward Current ( mA ) 100 80 60 40 20 80 70 60 50 40 30 20 10 RthJA=200K/W 0 0 0 0 15983 20 40 60 80 100 120 Tamb – Ambient Temperature ( qC ) 16731 0.12 230 0.10 220 0.06 75 100 125 Padsize 8 mm 2 per Anode Pin 210 0.005 0.05 0.5 0.08 50 Figure 5. Percentage Total Luminous Flux vs. Total Included Angle for 90 ° emission angle R thJA in K/W I F –Forward Current (A) Figure 2. Forward Current vs. Ambient Temperature 25 Total Included Angle (Degrees) 16201 0.04 200 190 180 0.02 170 0.00 10–5 10–4 10–3 10–2 10–1 100 tp – Pulse Length (ms) 160 101 102 Figure 3. Forward Current vs. Pulse Length Document Number 83213 Rev. 1.6, 31-Aug-04 0 16009 50 100 150 200 250 Cathode Padsize in mm 2 300 Figure 6. Thermal Resistance Junction Ambient vs. Cathode Padsize www.vishay.com 3 TLWR990. VISHAY Vishay Semiconductors Package Dimensions in mm 15984 www.vishay.com 4 Document Number 83213 Rev. 1.6, 31-Aug-04 TLWR990. VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83213 Rev. 1.6, 31-Aug-04 www.vishay.com 5