TSHG5210 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • 94 8390 DESCRIPTION TSHG5210 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Leads with stand-off Peak wavelength: λp = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 10° Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 18 MHz Good spectral matching with CMOS cameras Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS • Infrared radiation source for operation with CMOS cameras • High speed IR data transmission • Smoke-automatic fire detectors PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 230 ± 10 850 20 TSHG5210 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSHG5210 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 UNIT V Forward current IF 100 mA 200 mA Peak forward current tp/T = 0.5, tp = 100 µs IFM Surge forward current tp = 100 µs IFSM 1 A PV 180 mW Power dissipation Junction temperature Operating temperature range Tj 100 °C Tamb - 40 to + 85 °C Tstg - 40 to + 100 °C Soldering temperature t ≤ 5 s, 2 mm from case Tsd 260 °C Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 230 K/W Storage temperature range Note Tamb = 25 °C, unless otherwise specified Document Number: 81810 Rev. 1.1, 04-Sep-08 For technical questions, contact: [email protected] www.vishay.com 191 TSHG5210 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero 200 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 RthJA = 230 K/W 100 80 60 40 100 80 RthJA = 230 K/W 60 40 20 20 0 0 0 10 21142 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 21143 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs Temperature coefficient of VF Reverse current Forward voltage Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe MIN. TYP. MAX. VF 1.5 1.8 VF 2.3 IF = 1 mA TKVF - 1.8 VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie 230 V V mV/K 10 µA 420 mW/sr 125 140 UNIT pF IF = 1 A, tp = 100 µs Ie 2300 mW/sr IF = 100 mA, tp = 20 ms φe 55 mW IF = 100 mA TKφe - 0.35 %/K ϕ ± 10 Angle of half intensity deg Peak wavelength IF = 100 mA λp Spectral bandwidth IF = 100 mA Δλ 40 nm Temperature coefficient of λp IF = 100 mA TKλp 0.25 nm/K Rise time IF = 100 mA tr 20 ns Fall time IF = 100 mA tf 13 ns IDC = 70 mA, IAC = 30 mA pp fc 18 MHz d 3.7 mm Cut-off frequency Virtual source diameter 820 850 880 nm Note Tamb = 25 °C, unless otherwise specified www.vishay.com 192 For technical questions, contact: [email protected] Document Number: 81810 Rev. 1.1, 04-Sep-08 TSHG5210 High Speed Infrared Emitting Diode, RoHS Vishay Semiconductors Compliant, 850 nm, GaAlAs Double Hetero BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1000 Tamb < 50 °C tP/T = 0.01 1000 Radiant Power (mW) IF - Forward Current (mA) 0.02 0.05 0.1 10 1 e- 0.2 100 0.5 100 0.01 0.1 0.1 1.0 10 100 tP - Pulse Duration (ms) 16031 1 100 1.25 Φe, rel - Relative Radiant Power 1000 100 tP = 100 µs tP/T = 0.001 10 1.0 0.75 0.5 0.25 0 1 18873 1 3 2 VF - Forward Voltage (V) 4 800 Fig. 7 - Relative Radiant Power vs. Wavelength 0° Ie rel - Relative Radiant Intensity 10 000 1000 100 10 tP = 0.1 ms 900 λ- Wavelength (nm) 16972 Fig. 4 - Forward Current vs. Forward Voltage 850 10° 20° 30° 40° 1.0 50° 0.9 60° 0.8 70° ϕ - Angular Displacement 0 Ie - Radiant Intensity (mW/sr) 1000 Fig. 6 - Radiant Power vs. Forward Current Fig. 3 - Pulse Forward Current vs. Pulse Duration IF - Forward Current (mA) 10 IF - Forward Current (mA) 16971 80° 0.7 1 1 21307 10 100 1000 21111 0.6 0.4 0.2 0 IF - Forward Current (mA) Fig. 5 - Radiant Intensity vs. Forward Current Document Number: 81810 Rev. 1.1, 04-Sep-08 Fig. 8 - Relative Radiant Intensity vs. Angular Displacement For technical questions, contact: [email protected] www.vishay.com 193 TSHG5210 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero PACKAGE DIMENSIONS in millimeters C ± 0.15 A (4.7) < 0.7 8.7 ± 0.3 7.7 ± 0.15 AREA NOT PLANE 35.5 ± 0.55 12.5 ± 0.3 5.8 R 2.49 (sphere) 0.2 1.2 +- 0.1 1.5 ± 0.25 5 ± 0.15 + 0.15 0.5 - 0.05 6.544-5258.02-4 Issue: 5; 03.08.98 95 10916 www.vishay.com 194 technical drawings according to DIN specification 0.15 0.5 +- 0.05 2.54 nom. For technical questions, contact: [email protected] Document Number: 81810 Rev. 1.1, 04-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1