PCMCIA Flash Memory Card SRV Series SRAM Memory Card 256KB through 8MB General Description Features The WEDC SRAM Series (SRV) memory cards offer a high performance nonvolatile storage solution for code and data storage, disk caching, and write intensive mobile and embedded applications. • High Performance SRAM memory Card • Universal 3.3 to 5 Volt Supply allows for wider compatibility between systems. • Fast Access times: 150ns @ 5V 250ns @ 3.3V Packaged in PCMCIA type I or type II housing (type II for cards with extended battery backup time and 8MB cards), the WEDC SRAM SRV series is based on 1 or 4Mbit SRAM memories, providing densities from 256 Kilobytes to 8 Megabytes. • x8/x16 PCMCIA standard interface • Low Power CMOS technology provides very low power and reliable data retention characteristics - standby current < 100µA typical The SRV series of SRAM memory cards is a universal 3V/ 5V power supply and operates at speeds as high as 150ns. The cards are based on advanced CMOS technology providing very low power and reliable data retention characteristics. WEDC’s SRAM cards contain a rechargeable lithium battery and recharge circuitry, eliminating the need for replaceable batteries found in many SRAM cards. • Rechargeable Lithium battery with recharge circuitry - eliminates the need for replaceable batteries - standby current during recharge typically < 2mA - battery backup time •7 months - type I card •18 months - type II card typical based on 4MB (lower densities will have greater storage times) • Unlimited write cycles, no endurance issues WEDC’s standard cards are shipped with WEDC’s SRAM Logo. Cards are also available with blank housings (no Logo). The blank housings are available in both a recessed (for label) and flat housing. Please contact WEDC sales representative for further information on Custom artwork. • Optional Features: • 2KB EEPROM attribute memory containing CIS • Optional Hardware Write Protect switch • PC Card Standard Type I or Type II Form Factor Block Diagram 4MB SRAM Card Shown [A1..A19] address buffer [A20..A22] /CSHi + + + + + CE1# CE2# WE# OE# REG# A0 S1 /CS-A /RD /WR Vcc Write Prot Switch VS1 GND NC SRAM 512K x 8 SRAM 512K x 8 SRAM 512K x 8 SRAM 512K x 8 SRAM 512K x 8 SRAM 512K x 8 SRAM 512K x 8 /CS-A /RD /RD /WR /WR CTRL WP VS2 /CSLi decoder and control logic SRAM 512K x 8 /CSHi [A1..A11] ATTRIBUTE MEMORY CTRL I/O BUFFER GND [DO..D7] [DO..D7] [D8..D15] [D8..D15] + BVD1 BVD2 Vcc Notes: 1. pull down resistor (min 100k) Power Management and Battery Control to internal power supply + 2. pull up resistor (min 10k) Lithium Bat. June 2000 Rev. 1 - ECO #12896 1 PC Card Products PCMCIA Flash Memory Card SRV Series Pinout Pin Signal name 1 GND 2 DQ3 3 DQ4 4 DQ5 5 DQ6 6 DQ7 7 CE1# 8 A10 9 OE# 10 A11 11 A9 12 A8 13 A13 14 A14 15 WE# 16 RDY/BSY# 17 Vcc 18 Vpp1 19 A16 20 A15 21 A12 22 A7 23 A6 24 A5 25 A4 26 A3 27 A2 28 A1 29 A0 30 DQ0 31 DQ1 32 DQ2 33 WP 34 GND I/O I/O I/O I/O I/O I/O I I I I I I I I I O I I I I I I I I I I I I/O I/O I/O O Function Ground Data bit 3 Data bit 4 Data bit 5 Data bit 6 Data bit 7 Card enable 1 Address bit 10 Output enable Address bit 11 Address bit 9 Address bit 8 Address bit 13 Address bit 14 Write Enable Ready/Busy Supply Voltage Prog. Voltage Address bit 16 Address bit 15 Address bit 12 Address bit 7 Address bit 6 Address bit 5 Address bit 4 Address bit 3 Address bit 2 Address bit 1 Address bit 0 Data bit 0 Data bit 1 Data bit 2 Write Potect Ground Active Pin Signal name 35 GND 36 CD1# 37 DQ11 38 DQ12 39 DQ13 40 DQ14 41 DQ15 42 CE2# 43 VS1 44 N.C. 45 N.C. 46 A17 47 A18 48 A19 49 A20 50 A21 51 Vcc 52 Vpp2 53 A22 54 A23 55 A24 56 A25 57 VS2 58 N.C. 59 Wait# 60 N.C. 61 REG# 62 BVD2 63 BVD1 64 DQ8 65 DQ9 66 DQ10 67 CD2# 68 GND LOW LOW LOW N.C. N.C. HIGH I/O O I/O I/O I/O I/O I I O I I I I I O Function Ground Card Detect 1 Data bit 11 Data bit 12 Data bit 13 Data bit 14 Data bit 15 Card Enable 2 Voltage Sense 1 Active LOW LOW GND Address bit 17 256KB(2) Address bit 18 512KB(2) Address bit 19 1MB(2) Address bit 20 2MB(2) Address bit 21 4MB(2) Supply Voltage Prog. Voltage N.C. Address bit 22 8MB(2,4) N.C. N.C. N.C. Voltage Sense 2 N.C. O Extended Bus Cycle Low I O O I/O I/O O O Attrib Mem Select Bat. Volt. Detect 2 Bat. Volt. Detect 1 Data bit 8 Data bit 9 Data bit 10 Card Detect 2 Ground Low (3) LOW Notes: 1. CD1# and CD2# are grounded internal to PC Card. 2. Shows density for which specified address bit is MSB. Higher order address bits are no connects (ie 1MB A19 is MSB, A20 - A21 are NC). 3. BVD1 is an open drain output with a 10K ohm internal pull-up resistor. 4. The A22 Address line for 8MB capacities is also used for 6MB cards. June 2000 Rev. 1 - ECO #12896 2 PC Card Products PCMCIA Flash Memory Card SRV Series Mechanical Type I Interconnect area 1.6mm ± 0.05 (0.063”) 1.0mm ± 0.05 (0.039”) 3.0mm MIN 10.0mm MIN (0.400”) Substrate area 1.0mm ± 0.05 (0.039”) 54.0mm ± 0.10 (2.126”) 85.6mm ± 0.20 (3.370”) 10.0mm MIN (0.400”) 3.3mm ± T1 (0.130”) T1=0.10mm interconnect area T1=0.20mm substrate area Type II 1.6mm ± 0.05 0.063” 85.6mm ± 0.20 3.370” 1.0mm ±0.05 0.039’ 3.0mm MIN. Substrate area 1.0mm ±0.05 0.039’ 54.0mm ± 0.10 2.126” 10.0mm MIN 0.400” Interconnect area 5.0mm ± T1 0.197” June 2000 Rev. 1 - ECO #12896 3 PC Card Products PCMCIA Flash Memory Card SRV Series Card Signal Description Symbol A0 - A25 Type INPUT DQ0 - DQ15 INPUT/OUT PUT C E1 #, C E2 # INPUT OE# INPUT W E# INPUT RDY/BSY # CD1 #, CD2 # OUTPUT OUTPUT WP OUTPUT VPP1, VPP2 N.C. VCC GND REG # INPUT RST WAIT # INPUT OUTPUT BVD1, BVD2 OUTPUT VS1, VS2 OUTPUT RFU N.C. Name and Function ADDRESS INPUTS: A0 through A25 enable direct addressing of up to 64MB of memory on the card. Signal A0 is not used in word access mode. A25 is the most significant bit. (address pins used are based on card density,see pinout for highest used address pin) DA TA INPUT/OUTPUT: DQ0 THROUGH DQ15 constitute the bi-directional databus. DQ0 - DQ7 constitute the lower (even) byte and DQ8 - DQ15 the upper (odd) byte. DQ15 is the MSB. CARD ENA BLE 1 AND 2: CE1 # enables even byte accesses, C E2 # enables odd byte accesses. Multiplexing A0, C E1 # and C E2 # allows 8bit hosts to access all data on DQ0 - DQ7. OUTPUT ENA BLE: A ctive low signal enabling read data from the memory card. WRITE ENA BLE: A ctive low signal gating write data to the memory card. READY/BUSY OUTPUT: Not used for SRAM cards CARD DETEC T 1 and 2: Provide card insertion detection. These signals are connected to ground internally on the memory card. The host socket interface circuitry shall supply 10K-ohm or larger pull-up resistors on these signal pins. WRITE PRO TEC T: Follows hardware Write Protect Switch. When Switch is placed in on position, signal is pulled high (10K ohm). When switch is off signal is pulled low. PROGRAM/ERASE POW ER SUPPLY: Not used for SRAM cards. CARD POW ER SUPPLY: 3.3V / 5.0V for all internal circuitry. GROUND: for all internal circuitry. ATTRIBUTE MEMORY SELEC T : only used with cards built with optional attribute memory. RESET: Not used for SRAM cards WAIT: This signal is pulled high internally for compatibility. No wait states are generated. BA TTERY VOLTAG E D ETEC T: Provides status of Battery voltage. BVD2 = BVD1 = Voh (battery voltage is guaranteed to retain data) BVD2 = Vol, BVD1 = Voh (data is valid, battery recharge required) BVD2 = BVD1 = Vol (data may no longer be valid, battery requires extended recharge) VOLTAG E SENSE: Notifies the host socket of the card's VCC requirements. VS1is grounded and VS2 is open to indicate a 3.3V/5V 16 bit card, with a 5V key, has been inserted. RESERV ED FOR FUTURE USE NO INTERNA L CONNEC TION TO CARD: pin may be driven or left floating SRAM FUNCTIONAL TRUTH TABLE READ function Function Mode /CE2 /CE1 Standby Mode H H Byte Access (8 bits) H L H L Word Access (16 bits) L L Odd-Byte Only Access L H WRITE function Standby Mode H H Byte Access (8 bits) H L H L June 2000 Rev. 1 - ECO #12896 A0 X L H X X /OE X L L L L /WE X H H H H X L H X H H X L L Common Memory /REG D15-D8 D7-D0 X High-Z High-Z H High-Z Even-Byte H High-Z Odd-Byte H Odd-Byte Even-Byte H Odd-Byte High-Z X H H 4 X X X X Even-Byte Odd-Byte Attribute Memory /REG D15-D8 D7-D0 X High-Z High-Z L High-Z Even-Byte L High-Z Not Valid L Not Valid Even-Byte L Not Valid High-Z X L L X X X X Even-Byte X PC Card Products PCMCIA Flash Memory Card SRV Series Absolute Maximum Ratings (2) Operating Temperature TA (ambient) Commercial Industrial Storage Temperature Commercial Industrial Voltage on any pin relative to VSS VCC supply Voltage relative to VSS 0°C to +60 °C -40°C to +85 °C 0°C to +60 °C -40°C to +85 °C -0.5V to +5.5V (1) -0.5V to +7.0V DC Characteristics (1) Notes: (1) During transitions, inputs may undershoot to -2.0V or overshoot to VCC +2.0V for periods less than 20ns. (2) Stress greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation at these or any other conditions greater than those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. CMOS Test Conditions: VIL = VSS ± 0.2V, VIH = 5V ± 0.2V Min (3) Sym Parameter Density Notes ICC VCC Active Current 1 ICCS VCC Standby Current 64KB 128KB 256KB 512KB 1MB to 8MB All 2,4 ILI Input Leakage Current All 5,6 ±20 µA ILO Output Leakage Current All 6 ±20 µA VIL Input Low Voltage All 6 0 0.8 V VIH Input High Voltage All 6 3.85 V VOL Output Low Voltage All 6 VCC +0.5 0.4 V IOL = 3.2mA VOH Output High Voltage All 6 VCC V IOH = -2.0mA < 0.1 VCC0.4 Typ Max Units Test Conditions 90 90 90 90 110 180 180 180 180 190 mA VCC = 5.25V tcycle = 150ns <1 10 mA VCC = 5.25V Control Signals = VCC VCC = VCCMAX Vin =VCC or VSS VCC = VCCMAX Vout =VCC or VSS Notes: 1. All currents are for x16 mode and are RMS values unless otherwise specified. 2. Control Signals: CE1#, CE2#, OE#, WE#, REG#. 3. Typical: VCC = 5V, T = +25C. 4. ICCS includes battery recharge current. Value depends on battery discharge level. ICCS min is specified for fully charged battery. ICCS typical value is specified for battery discharge to 2.7V. ICCS max is specified for a fully discharged battery (0V). Battery will recharge to 1.5V in 20 sec. 5. Values are the same for byte and word wide modes for all card densities. 6. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 µA when VIN = GND due to internal pull-up resistors. Battery Characteristics Parameter Battery Life Battery Backup Time Density All 256KB 512KB, 1MB 2MB 4MB 6MB 8MB Notes (1) (2) SRV11-14 Type I min 10 32 22 12 12 - SRV01-04 Type I Type II Units min 10 years 24 60 18 45 12 30 months 17 7 (typical) 7 17 12 Conditions Normal operation, T=25C T=25C Battery backup time is a calculated value and is not guaranteed. This should not be used to schedule battery recharging. Notes: 1. Battery Life refers to functional lifetime of battery. 2. Battery backup time is density and temperature dependent. June 2000 Rev. 1 - ECO #12896 5 PC Card Products PCMCIA Flash Memory Card SRV Series AC Characteristics Read Timing Parameters 5.0V Parameter Min 3.3V SYM (PCMCIA) tRC Max Read Cycle Time ta(A) Address Access Time 150 250 ns ta(CE) Card Enable Access Time 150 250 ns ta(OE) Output Enable Access Time 75 125 ns tsu(A) Address Setup Time 20 30 ns tsu(CE) Card Enable Setup Time 0 0 ns th(A) Address Hold Time 20 20 ns th(CE) Card Enable Hold Time 20 20 ns tv(A) Output Hold from Address Change 0 0 ns tdis(CE) Output Disable Time from CE# 75 100 ns tdis(OE) Output Disable Time from OE# 75 100 ns tdis(CE) Output Enable Time from CE# 5 5 ns tdis(CE) Output Enable Time from OE# 5 5 ns 150 Min Max Unit 250 ns Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specifications. Read Timing Diagram tc(R) th(A) ta(A) A[25::0], /REG tv(A) ta(CE) tsu(CE) /CE1, /CE2 NOTE 1 NOTE 1 tsu(A) th(CE) ta(OE) tdis(CE) /OE tdis(OE) ten(OE) D[15::0] DATA VALID Note: Signal may be high or low in this area. June 2000 Rev. 1 - ECO #12896 6 PC Card Products PCMCIA Flash Memory Card SRV Series Write Timing Parameters 5.0V Min 3.3V SYM (PCMCIA) tCW Parameter Max Min Max Unit Write Cycle Time 150 250 ns tw(WE) Write Pulse Width 80 150 ns tsu(A) Address Setup Time 20 30 ns tsu(A-WEH) Address Setup Time for WE# 100 180 ns tsu(CE-WEH) Card Enable Setup Time for WE# 100 180 ns tsu(D-WEH) Data Setup Time for WE# 50 80 ns th(D) Data Hold Time 20 30 ns trec(WE) Write Recover Time 20 30 ns tdis(WE) Output Disable Time from WE# 75 100 ns tdis(OE) Output Disable Time from OE# 75 100 ns ten(WE) Output Enable Time from WE# 5 5 ns tdis(OE) Output Enable Time from OE# 5 5 ns tsu(OE-WE) Output Enable Setup from WE# 10 10 ns th(OE-WE) Output Enable Hold from WE# 10 10 ns tsu(CE) Card Enable Setup Time from OE# 0 0 ns th(CE) Card Enable Hold Time 20 20 ns Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specifications. Write Timing Diagram tc (W ) A [ 2 5 :: 0 ], / R E G ts u ( A - W E H ) tre c (W E ) ts u ( C E - W E H ) th (C E ) ts u (C E ) /C E 1 , /C E 2 NOTE 1 NO TE 1 /O E tw (W E ) ts u ( A ) th (O E -W E ) /W E th ( D ) ts u (O E -W E ) D [ 1 5 : :0 ] ( D in ) ts u (D -W E H ) NO TE 2 D A T A IN P U T t d is ( W E ) t d is ( O E ) te n (O E ) te n (W E ) D [ 1 5 ::0 ] ( D o u t ) NO TE 2 Notes: 1. Signal may be high or low in this area. 2. When the data I/O pins are in the output state, no signals shall be applied to the data pins (D15 - D0) by the host system. June 2000 Rev. 1 - ECO #12896 7 PC Card Products PCMCIA Flash Memory Card SRV Series PRODUCT MARKING WED 8P512SRV0100C15 C995 9915 EDI Date code Lot code / trace number Part number Company Name Note: Some products are currently marked with our pre-merger company name/acronym (EDI). During our transition period, some products will also be marked with our new company name/acronym (WED). Starting October 2000 all PCMCIA products will be marked only with the WED prefix. PART NUMBERING 8 P 512 SRV01 00 C 15 Card access time 15 25 150ns 250ns Temperature range C Commercial 0°C to +70°C I Industrial -40°C to +85°C Packaging option 00 Standard, type 1 Card family and version - See Card Family and Version Info. for details (next page) Card capacity 512 512KB PC card P R Standard PCMCIA Ruggedized PCMCIA Card technology 7 8 June 2000 Rev. 1 - ECO #12896 FLASH SRAM 8 PC Card Products PCMCIA Flash Memory Card SRV Series Ordering Information 8P XXX SRV YY SS T ZZ where XXX: 256* 512* 001 002 004 006 008* 256KB 512KB 1MB 2MB 4MB 6MB 8MB *= YY: Capacities available only in SRV01-SRV04 01 02 03 04 no attribute memory, no Write Protect Switch with attribute memory, no Write Protect Switch with Write Protect Switch, no attribute memory with attribute memory, with Write Protect Switch 11 12 13 14 Extended Battery Backup Time, no attribute memory, no Write Protect Switch Extended Battery Backup Time, with attribute memory, no Write Protect Switch Extended Battery Backup Time, with Write Protect Switch, no attribute memory Extended Battery Backup Time, with attribute memory, with Write Protect Switch SS: 00 01 02 03 04 05 WEDC SRAM Logo Type I Blank Housing, Type I Blank Housing, Type I Recessed WEDC SRAM Logo, Type II (8MB and extended battery backup time) Blank Housing, Type II (8MB and extended battery backup time) Blank Housing, Type II Recessed (8MB and extended battery backup time) T: C I Commercial Industrial ZZ: 15 150ns June 2000 Rev. 1 - ECO #12896 9 PC Card Products PCMCIA Flash Memory Card SRV Series Date of revision 27-Sep-99 2-Jun-00 REVISION HISTORY Version Description 0 Initial release 1 Added Page 8, Added SRV11-14 to page 9, Changed Page Header Filename: SRV Dsht Rev1.ppt White Electronic Designs Corporation One Research Drive, Westborough, MA 01581, USA tel: (508) 366 5151 fax: (508) 836 4850 www.whiteedc.com June 2000 Rev. 1 - ECO #12896 10 PC Card Products