Inchange Semiconductor Product Specification 2SC4559 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220Fa package ·High speed switching ·High VCEO APPLICATIONS ·For high breakdown voltage ,high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 7 A ICM Collector current-Peak 15 A IB Base current 3 A PC Collector power dissipation TC=25℃ 40 W Ta=25℃ 2 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC4559 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A 1.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.6A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=0.1A ; VCE=5V 10 hFE-2 DC current gain IC=3A ; VCE=5V 8 Transition frequency IC=0.5A ; VCE=10V;f=1MHz fT CONDITIONS MIN TYP. MAX 400 UNIT V 5.5 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=3A; IB1=0.6A IB2=-1.2A;VCC=150V 2 1.0 μs 3.0 μs 0.3 μs Inchange Semiconductor Product Specification 2SC4559 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification 2SC4559 Silicon NPN Power Transistors 4