ISC 2SA764

Inchange Semiconductor
Product Specification
2SA764
Silicon PNP Power Transistors
DESCRIPTION
·With TO-66 package
·Low collector saturation voltage
·Complement to type 2SC1444
APPLICATIONS
·Desinged for general-purpose power
amplifier and applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-6
V
-6
A
40
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SA764
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ;IB=0
-60
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ;IE=0
-60
V
VCEsat
Collector-emitter saturation voltage
IC=-4A; IB=-0.4A
-1.5
V
VBEsat
Base-emitter saturation voltage
IC=-4A; IB=-0.4A
-2.0
V
ICBO
Collector cut-off current
VCB=-60V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-10
μA
hFE
DC current gain
IC=-1A ; VCE=-4V
Transition frequency
IC=-0.5A ; VCE=-12V
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
50
10
MHz
Inchange Semiconductor
Product Specification
2SA764
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3