Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB962-Z TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Low VCE(sat): VCE(sat)=-0.3V. 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO -40 V Collector to emitter voltage VCEO -30 V Emitter to base voltage VEBO -5 V Collector current IC -3 A Collector current pulse * ICP -6 A Total power dissipation PT 2 W Junction temperature Tj 150 Tstg -55 to +150 Storage temperature range * PW 10ms,duty cycle 50%. Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current ICBO Emitter cutoff current IEBO DC current gain * hFE Testconditons Min Typ VCB = -30 V, IE = 0 VEB = -3.0 V, IC = 0 VCE = -2.0 V, IC = -1A 60 160 VCE = -2.0 V, IC =-20mA 30 150 Max Unit -10 µA -1 µA 400 Collector saturation voltage * VCE(sat) IC = -2A, IB = -0.2A -0.3 -0.5 V Base saturation voltage * VBE(sat) IC = -2A, IB = -0.2A -1 -2 V Gain bandwidth product fT Output capacitance * Pulsed: PW Cob 350 µs, duty cycle VCE = -5.0 V, IE = 100mA 80 MHz VCB = -10 V, IE = 0 , f = 1.0 MHz 55 pF 2% hFE Classification Rank R Q P E hFE 60 120 100 200 160 320 200 400 www.kexin.com.cn 1