JMNIC 2SA699A

JMnic
Product Specification
2SA699 2SA699A
Silicon PNP Power Transistors
DESCRIPTION
・With TO-202 package
・Complement to type 2SC1226/1226A
APPLICATIONS
・Power amplifier applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-202) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SA699
VCBO
Collector-base voltage
-32
Open base
2SA699A
VEBO
Emitter-base voltage
V
-50
2SA699
Collector-emitter voltage
UNIT
-40
Open emitter
2SA699A
VCEO
VALUE
V
-40
Open collector
-5
V
IC
Collector current
-2
A
ICM
Collector current-peak
-3
A
IB
Base current
-0.6
A
PC
Collector power dissipation
10
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SA699 2SA699A
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
IC=-1.5A ;IB=-0.15A
VBEsat
Base-emitter saturation voltage
IC=-2A ;IB=-0.2 A
V(BR)CBO
CONDITIONS
2SA699
Collector-base
breakdown voltage
MAX
UNIT
-0.4
-1.0
V
-1.5
V
IC=-1mA;IE=0
2SA699
Collector-emitter
breakdown voltage
V
-50
-32
IC=-10mA; IB=0
V
-40
2SA699A
‹
TYP.
-40
2SA699A
V(BR)CEO
MIN
ICBO
Collector cut-off current
VCB=-20V; IE=0
-1
μA
ICEO
Collector cut-off current
VCE=-12V; IB=0
-100
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-100
μA
hFE
DC current gain
IC=-1A ; VCE=-5V
COB
Output capacitance
IE=0; VCB=-5V;f=1MHz
70
pF
fT
Transition frequency
IE=0.5A ; VCB=-5V
150
MHz
hFE classifications
P
Q
R
50-100
80-160
100-220
2
50
220
JMnic
Product Specification
2SA699 2SA699A
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
JMnic
Product Specification
2SA699 2SA699A
Silicon PNP Power Transistors
4
JMnic
Product Specification
2SA699 2SA699A
Silicon PNP Power Transistors
5