DATA SHEET PNP SILICON POWER TRANSISTOR 2SB772 PNP SILICON POWER TRANSISTOR DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SB772 is PNP silicon transistor suited for the output stage of 3 W audio amplifier, voltage regulator, DC-DC converter and relay driver. 8.5 MAX. 3.2 ±0.2 2.8 MAX. FEATURES 2.5 ±0.2 12 TYP. Maximum Temperature Storage Temperature −55 to +150°C Junction Temperature 150°C Maximum Maximum Power Dissipation 1.0 W Total Power Dissipation (TA = 25°C) 10 W Total Power Dissipation (TC = 25°C) Maximum Voltages and Currents (TA = 25°C) Collector to Base Voltage −40 V VCBO Collector to Emitter Voltage −30 V VCEO Emitter to Base Voltage −5.0 V VEBO Collector Current (DC) −3.0 A IC(DC) IC(pulse)Note Collector Current (pulse) −7.0 A Note Pulse Test PW ≤ 350 µs, Duty Cycle ≤ 2% 13.0 MIN. ABSOLUTE MAXIMUM RATINGS 12.0 MAX. 3.8 ±0.2 • Low saturation voltage VCE(sat) ≤ −0.5 V (IC = −2 A, IB = −0.2 A) • Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = −2 V, IC = −1 A) • Less cramping space required due to small and thin package and reducing the trouble for attachment to a radiator. No insulator bushing required. 0.55 +0.08 –0.05 0.8 +0.08 –0.05 1.2 TYP. 2.3 TYP. 2.3 TYP. 1: Emitter 2: Collector: connected to mounting plane 3: Base ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTIC SYMBOL TEST CONDITIONS Note DC Current Gain hFE1 VCE = −2.0 V, IC = −20 mA DC Current Gain hFE2 VCE = −2.0 V, IC = −1.0 mA Gain Bandwidth Product fT Note 60 160 55 VCB = −10 V, IE = 0, f = 1.0 MHz Collector Cutoff Current ICBO VCB = −30 V, IE = 0 A Base Saturation Voltage 220 80 Cob Collector Saturation Voltage TYP. 30 VCE = −5.0 V, IC = −0.1 A Output Capacitance Emitter Cutoff Current MIN. MAX. UNIT 400 MHz pF IEBO VEB = −3.0 V, IC = 0 A −1.0 µA µA VCE(sat) IC = −2.0 A, IB = −0.2 A Note −0.3 −0.5 V IC = −2.0 A, IB = −0.2 A Note −1.0 −2.0 V VBE(sat) −1.0 Note Pulse Test: PW ≤ 350 µs, Duty Cycle ≤ 2% CLASSIFICATION OF hFE Rank R Q P E Range 60 to 120 100 to 200 160 to 320 200 to 400 Remark Test Conditions: VCE = −2.0 V, IC = 1.0 A The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. 2SB772 TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted.) PT ∆Rth VCE IC TC TA IC(pulse) 50% VCE IC(DC) hFE hFE VBE IB VRF IC IC TC = 25°C VCE VCE IC IC = 10 A • IB VCE IE = 0 A (Cob) IC = 0 A (Cib) VBE(sat) Cib Cob t) (sa fT VBE(sat) VCE(sat) Cib Cob VCE IC 2 IC VCB VEB