Inchange Semiconductor Product Specification 2SC4419 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High reliability ·High voltage ,high speed switching APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 6 A IB Base current 3 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ MAX UNIT 1.25 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case Inchange Semiconductor Product Specification 2SC4419 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 900 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IB=0 10 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A 1.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.4A 1.5 V ICBO Collector cut-off current VCB=900V ;IE=0 1.0 mA IEBO Emitter cut-off current VEB=10V; IC=0 1.0 mA hFE DC current gain IC=2A ; VCE=5V 1.0 μs 4.0 μs 0.8 μs 10 Switching times ton Turn-on time tstg Storage time tf IC=3A;IB1=0.6A; IB2=-1.2A;RL=100Ω PW=20μs,Duty≤2% Fall time 2 Inchange Semiconductor Product Specification 2SC4419 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 Inchange Semiconductor Product Specification 2SC4419 Silicon NPN Power Transistors 4