Inchange Semiconductor Product Specification 2N5622 2N5624 2N5626 2N5628 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For audio and general-purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol 导体 半 电 固 Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VCEO EMIC S E G N 2N5622 VCBO Collector-base voltage A H C IN Collector-emitter voltage OND 2N5624/5626 Open emitter VALUE 100 120 2N5622 60 2N5624/5626 Open base Emitter-base voltage UNIT 80 2N5628 2N5628 VEBO R O T UC 80 V V 100 Open collector 5 V 10 A 100 W IC Collector current PD Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.5 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5622 2N5624 2N5626 2N5628 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N5622 VCEO(SUS) Collector-emitter sustaining voltage 2N5624/5626 TYP. MAX UNIT 60 IC=50mA ;IB=0 V 80 100 2N5628 VCEsat MIN Collector-emitter saturation voltage IC=10A; IB=1A 1.5 V VBE Base-emitter on voltage IC=5A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=Rated VCBO; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA 导体 半 电 2N5622/5626 hFE DC current gain 固 70 D N O IC 30 M E S GE 2N5622/5626 fT Transition frequency N A H INC R O T UC IC=5A ; VCE=5V 2N5624/5628 2 90 40 IC=1A ; VCE=12V 2N5624/5628 200 30 MHz Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5622 2N5624 2N5626 2N5628 PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 outline dimensions 3