Inchange Semiconductor Product Specification 2SC1227 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS ·Suitable for use in clocked voltatge converters PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol MAXIMUN RATINGS SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A IB Base current 3 A PT Total power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ VALUE UNIT 1.25 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification 2SC1227 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=50mA ; IB=0 200 V V(BR)CBO Collector-base breakdown voltage IC=0.1mA ; IE=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=0.1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A 1.5 V ICBO Collector cut-off current VCB=300V; IE=0 20 μA IEBO Emitter cut-off current VEB=7V; IC=0 20 μA hFE DC current gain IC=5A ; VCE=5V 2 MIN 50 TYP. MAX UNIT Inchange Semiconductor Product Specification 2SC1227 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3