GaAs Foundry Services PROCESS PE3 PE3 V2.00 Features • Typical RF Performance 0.5 µm MBE MESFET Technology for High Power Applications MMICs up to 18 GHz 100 mm wafer diameter Layout and design assistance Space qualification Custom test and packaging • • • • • Description FC06 (6X150) 900 um FET Param. Test Conditions Freq. Typ. Val. MAG VDS = 8V, IDS = .40IDSS 2/12GHz 22/13.5dB PSAT VDS = 8V, IDS = .40IDSS 2/12GHz 680/525mW/mm PAE VDS = 8V, IDS = .40IDSS 2/12GHz 50/41% ft VDS = 8V, IDS = .40IDSS ------ 20GHz Ordering Information M/A-COM’s PE3 process utilizes molecular beam epitaxy (MBE) to implement a MESFET active layer structure that achieves high efficiency and breakdown for multi-watt power applications thru 18GHz. The focus is on products for moderate to high volume applications. M/A-COM offers a full compliment of foundry services to meet the requirements for custom designing a MMICbased die or packaged product. Part Number Description FE43-0001 PE3 Wafer SVC6310 Mask Set Electrical Specifications: TA = +25 °C Parameter Test Conditions Units Min. Typ. Max. 200um PCM FET IDSS VDS = 3V, VGS = 0V mA/mm 180 240 310 DC GM VDS = 3V, IDS = 0.5IDSS mS/mm 125 150 185 Vp VDS = 3V, IDS = 0.025IDSS V -1.2 -1.8 -2.2 BVgd IG = 0.1mA/mm V -11 -15 - RF GM VDS = 3V, IDS = 0.5IDSS mS 25 32 45 Cgs VDS = 3V, IDS = 0.5IDSS pF .140 .200 .280 Cgd VDS = 3V, IDS = 0.5IDSS pF .015 .022 .028 Cds VDS = 3V, IDS = 0.5IDSS pF .025 .038 .050 Ft VDS = 3V, IDS = 0.5IDSS GHz 20 26 34 Sheet Resistances NDRS (N- GaAs) l = 20mA Ohms/sq 340 375 410 NCRS (NiCr) l = 10mA Ohms/sq 42 50 58 GFRS (Gate Metal) l = 20mA Ohms/sq - .027 .040 Capacitance/unit area f = 1MHz pF/mm 360 400 440 Capacitor Leakage V = 10V µA - - 0.5 MIM Capacitors 2 Specifications Subject to Change Without Notice. M/A-COM Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 1 ♦ Asia/Pacific: Tel. +81 3 3263-8761 Fax +81 3 3263-8769 ♦ Europe: Tel. +44 (1344) 869-595 Fax +44 (1344) 300-020 GaAs Foundry Services Process PE3 V2.00 Normalized Nominal Models Parameter 25% IDSS 8 VDS Mask Layer Assignments 50% IDSS 8 VDS IDS mA/mm 62.62 127.96 gm mS/mm 140.37 155.44 Cgs pF/mm 1.178 1.303 Cgd pF/mm 0.072 0.059 Cds pF/mm 0.172 0.185 Td pS 5.574 5.502 Ri Ohms-mm 2.093 1.729 Gds mS/mm 9.214 7.929 Ggs mS/mm 0.168 0.093 Rg Ohms/mm 47.996 Rs Ohms-mm LAYER PROCESS CODE 3 OH PROCESS DESCRIPTION Ohmic 4 BI Boron Isolation 5 RD Resistor Deposition 7 GF Gate Finger 8 GL Gate Interconnect 10 TV Top via 11 OL Overlay 12 AP Air-post 13 AS Air-Span 47.996 25 BV Back-via 0.827 0.827 28 FP Final Passivation Rd Ohms-mm 0.865 0.865 Lg nH/Finger 0.108 0.108 Ld nH/Finger 0.108 0.108 Cgp pF/mm 0.148 0.148 Cdp pF/mm 0.148 0.148 29 ST Saw Street NOTE: Unused layer numbers are reserved for future use. GMAX - 900um FET Specifications Subject to Change Without Notice. 2 North America: Tel. (800) 366-2266 Fax (800) 618-8883 M/A-COM Inc. ♦ Asia/Pacific: Tel. +81 3 3263-8761 Fax +81 3 3263-8769 ♦ Europe: Tel. +44 (1344) 869-595 Fax +44 (1344) 300-020